Gridless AlGaN/GaN field effect transistor sensor, and preparation method thereof

Abstract

The invention provides a gridless AlGaN / GaN field effect transistor sensor. According to the gridless AlGaN / GaN field effect transistor sensor, electrodes are arranged on an AlGaN / GaN heterojunction substrate via vapor deposition; the gridless AlGaN / GaN field effect transistor sensor also comprises a passivation layer; a whole source end electrode, a source end electrode PAD, a leakage end electrode, and a leakage end electrode PAD are covered by the passivation layer; the passivation layer used for covering the source end electrode PAD and the leakage end electrode PAD is provided with windows via etching until the PADs are exposed; the gridless AlGaN / GaN field effect transistor sensor also comprises an ion imprinted polymer layer, the ion imprinted polymer layer is arranged on an AlGaN layer, and possesses imprinting holes. The invention also discloses a preparation method of the gridless AlGaN / GaN field effect transistor sensor. The conductive polymer nano composite material possesses single ion identification performance, is capable of improving selective adsorption and anti-interference performance of devices, is capable of realizing quick response and high accuracy quantitative determination, can be reused conveniently and quickly after washing with NaCl solution, is convenient to use, is low in cost, and can be used for water quality on-line monitoring.

Description

technical field

[0001] The patent of the invention relates to the field of environmental detection, in particular to a gateless AlGaN / GaN field-effect transistor sensor with ion recognition and concentration detection and its preparation method. Background technique

[0002] Molecularly imprinted polymer (MIP) is a new technology that has emerged in recent years to prepare polymers with recognition functions for template molecules. , biosensors, selective catalysis and other fields have shown superiority, which has become one of the research hotspots. The problem of water pollution has attracted more and more people's attention. Effective detection of water pollutants has become one of the important issues closely related to people's daily life. It is difficult to realize the identification of pollutants.

[0003] In view of the above situation, the present invention proposes a new type of gateless AlGaN / GaN field effect transistor sensor for detecting harmful Anions, the...

Images