Preparation method of thermosensitive-film infrared detector

A technology of infrared detectors and heat-sensitive films, applied in the field of infrared detection, can solve problems such as uncontrollable resistance, large fluctuations, and affecting the quality of VOx, and achieve the effect of reducing the impact and preventing valence changes

Active Publication Date: 2012-01-11
YANTAI RAYTRON TECH
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Problems solved by technology

However, O plasma for dry debonding can lead to VO x A phase transition occurs, resulting in VO x The resistance of the resistance changes, resulting in uncontrollable resistance, large fluctuations, and irreversible changes, which

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  • Preparation method of thermosensitive-film infrared detector
  • Preparation method of thermosensitive-film infrared detector
  • Preparation method of thermosensitive-film infrared detector

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Embodiment Construction

[0035] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0036] The method of the present invention has carried out large technological adjustment to traditional craft, promptly in VO x A thin layer of low-stress Si is first deposited on the film 3 N 4 film as VO x protective layer with a thickness of 350 ~650 . followed by photolithography and etching processes, VO x thin film and Si 3 N 4 The film is etched together to obtain VOx pattern, formed with Si 3 N 4 Protective film thermistor. After the etching is completed, dry and wet stripping processes are performed to completely remove the photoresist. Because of VO x a thin layer of Si 3 N 4 The thin film acts as a protective layer to isolate O plasma or H 2 The role of O molecules eliminates the impact ...

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Abstract

The invention relates to a preparation method of a thermosensitive-film infrared detector. The method comprises the following steps: depositing successively a sacrificial layer, a thermal-sensitive layer and a protective layer on a readout circuit of an infrared detector, wherein a material of the thermal-sensitive layer is vanadium oxide and the material of the protective layer is silicon nitride; simultaneously, imaging the protective layer and the thermal-sensitive layer; depositing a dielectric layer; etching a via and a contact, wherein the via etching ends at an electrode of the readoutcircuit and the contact etching ends at the thermal-sensitive layer surface; depositing a metal electrode layer and imaging the metal electrode layer; carrying out structure release of the sacrificial layer. In the method of the invention, the silicon nitride layer or SiO2 is added to be used as a protective layer of a vanadium oxide thermal-sensitive layer so that the vanadium oxide film, which is the thermal-sensitive layer, can be prevented from generating changes of a thermal property and an electrical property and influence on the detector performance can be reduced. Simultaneously, by using a high selection ratio of the silicon nitride etching to the vanadium oxide etching, the contact and the via can be used to complete the imaging of hole graphics through one lithographic plate.

Description

technical field [0001] The invention relates to the field of infrared detection, in particular to a manufacturing process of a heat-sensitive infrared detector, and especially proposes a new method for the protection of heat-sensitive materials and the simplification of the manufacturing process. Background technique [0002] In recent years, the field of infrared detection is undergoing a revolution. The uncooled infrared imaging technology represented by the microbolometer has made important breakthroughs and achieved commercial mass production. It not only solves the most prominent requirement of low temperature (~77K) cooling in infrared imaging technology, but also realizes large-scale or ultra-large-scale integration with the readout circuit, realizing high density, miniaturization, portability and easy operation. Infrared camera. At the same time, this technology is also suitable for mass production using large-scale integrated circuit production technology, which ma...

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 甘先锋杨水长邹渊渊孙瑞山王宏臣张连鹏
Owner YANTAI RAYTRON TECH
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