4results about How to "Change electrical properties" patented technology

The utility model relates to the technical field of transistors, and discloses a transistor packaging device which comprises a device body, a cover plate is hinged to the upper surface of the device body, a plurality of annular frames distributed in a matrix mode are fixedly connected to the bottom surface of the cover plate, and a plurality of atomizing nozzles distributed in a circumferential mode fixedly communicate with the bottom surfaces of the annular frames. A plurality of placing grooves distributed in a matrix mode are formed in the device body, and sliding grooves are formed in the inner walls of the placing grooves. According to the transistor packaging device, by installing the atomization nozzle, when the cover plate is used for sealing the device body, atomized anti-static liquid can be sprayed into the device body, so that the device body is filled with the anti-static liquid, and a layer of conductive film is formed on the surface of a semiconductor transistor in the device body; therefore, the electrical property of the surface of the coated object is changed, surface charges are released or neutralized, and the effect of reducing or eliminating static accumulation is achieved.

This invention provides a semiconductor device and its fabrication method, comprising the following steps: providing a substrate; forming a carbon nanotube layer on the substrate, the carbon nanotube layer having at least one carbon nanotube; forming a defect structure in contact with the carbon nanotube layer, the defect structure containing charged defects, the charged defects acting on the carbon nanotube layer to electrically dope the carbon nanotube layer; wherein, the electrical doping concentration of the carbon nanotubes is controlled by adjusting the density of the charged defects. In this invention, electrical doping of the carbon nanotube layer through the defect structure only changes the electrical properties of the carbon nanotube layer without damaging its physical structure, achieving non-destructive electrical doping. Furthermore, using a high work function metal layer as the source and drain electrodes of the N-type carbon nanotube device simplifies the design rules of carbon nanotube integrated circuits, facilitates the large-scale integrated circuit application of carbon nanotube devices, and enables the matching of N-type and P-type devices.

The application provides a low-voltage driven liquid crystal dimming film, which contains a liquid crystal dimming layer, the liquid crystal dimming layer contains nematic liquid crystal, polymer and ionic liquid crystal, the mass of the polymer is 30%-70% of the total mass of the polymer and the nematic liquid crystal, and the weight percentage of the ionic liquid crystal in the total mass of the liquid crystal dimming layer is less than or equal to 2%; the ionic liquid crystal contains a pyridine ring structure. By adding a small proportion of ionic liquid crystal, the liquid crystal dimming film has the characteristics of low cost, low driving voltage and high stability.

The embodiment of the application discloses a brain-computer interface electrode surface treatment device, a treatment method and a storage medium, and belongs to the technical field of electrode treatment. The device comprises: a first gas module and a second gas module, the first gas module comprises a nozzle and an ionization cavity, the ionization cavity is connected with the nozzle, and the second gas module is connected with the ionization cavity; a central control module and a motion control module, the central control module is connected with the motion control module, the central control module is also connected with the second gas module, the motion control module is connected with the first gas module, and the central control module is used for generating a motion control instruction and a first gas delivery instruction according to an electrode characteristic parameter of an electrode. The embodiment improves the fine degree of electrode surface treatment.