Self-driven solar blind ultraviolet detector with organic-inorganic composite structure and preparation method thereof

An ultraviolet detector and inorganic composite technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of self-driven photodetectors that are difficult to manufacture and realize, and achieve excellent detection performance and material cost. The effect of low cost and simple preparation process

Pending Publication Date: 2019-04-30
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the current research, due to the difficulty of p-type doping and high-quality Schottky contacts of gallium oxide

Method used

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  • Self-driven solar blind ultraviolet detector with organic-inorganic composite structure and preparation method thereof
  • Self-driven solar blind ultraviolet detector with organic-inorganic composite structure and preparation method thereof
  • Self-driven solar blind ultraviolet detector with organic-inorganic composite structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] In this example, an organic-inorganic composite structure self-driven solar-blind ultraviolet detector is prepared according to the following steps:

[0031] Preparation of Microwires. Measure and mix high-purity gallium oxide powder and carbon powder with a mass ratio of 1:1, and grind for more than 2 hours. Put the above mixed powder into the middle of the corundum boat, place the substrate directly above the mixed powder, put the corundum boat into the quartz tube, and then put the quartz tube into the growth chamber of the horizontal high-temperature tube furnace for growth, and the growth environment is normal pressure , high-purity argon was introduced as a carrier gas during the growth process. After the growth is completed, the temperature is naturally lowered to obtain gallium oxide micron wires. The size of micron wires can be comprehensively regulated by growth temperature and growth time.

[0032] Preparation of reaction solution. First prepare a dilute ...

Embodiment 2

[0036] This example is the same as Example 1 except for the following features: Step 2) in this example measures 7.6 μL of pyrrole and dissolves it in dilute sulfuric acid solution.

Embodiment 3

[0038]This example is the same as Example 1 except for the following features: step 2) in this example measures 11.7 μL of 3,4-ethylenedioxythiophene and dissolves it in dilute sulfuric acid solution.

[0039] Under the condition that other conditions remain unchanged, the inorganic acid can also be HCl or HClO 4 , the oxidizing agent can also be K 2 Cr 2 o 7 、KIO 3 , FeCl 3 , FeCl 4 、H 2 o 2 , Ce(SO 4 ) 2 , MO 2 or BPOs.

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Abstract

The invention belongs to the technical field of photoelectric detectors, and concretely relates to p-n junction self-driven solar blind ultraviolet detector based on an organic-inorganic composite structure and a preparation method thereof. The structure of the device includes a substrate, a n-type gallium oxide micron wire, a p-type organic conductive polymer nano film, and metal contact electrodes prepared on the p-type and n-type layers. The characteristics of the self-driven solar blind ultraviolet detector with the organic-inorganic composite structure are that a core-shell structure is formed by the p-type organic conductive polymer nano film and the n-type gallium oxide micron wire, and so the self-driven solar blind ultraviolet detector has good photoelectric characteristics and deep ultraviolet selectivity when operated under zero bias voltage. The device solves the problem that a p-type material in a conventional inorganic semiconductor deep ultraviolet photodetector of a p-nstructure cannot be controllably prepared. The detector of the invention is simple in preparation process and has great application prospect in the field of solar blind ultraviolet detection.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to an organic-inorganic composite structure self-driven solar-blind ultraviolet detector and a preparation method. Background technique [0002] When the solar radiation passes through the atmosphere, due to the existence of the ozone layer, the ultraviolet radiation with a wavelength in the range of 200-280nm will be strongly absorbed. The solar ultraviolet radiation in this band range is almost non-existent on the ground, so it is called solar blind ultraviolet. Therefore, detectors working in this band are called solar-blind ultraviolet detectors. Since there is almost no background radiation interference from the sun in the sun-blind band on the earth's surface, it can achieve a higher detection rate for target objects. It can be widely used in military and civilian fields such as missile early warning, ultraviolet communication, environmental monitoring, and...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/00H10K30/00Y02E10/549
Inventor 陈洪宇王月飞王贺彬李炳生
Owner HARBIN INST OF TECH
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