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20 results about "Protective oxide" patented technology

A high-entropy alloy nano-coating high-temperature oxidation-resistant modification preparation process

This invention provides a high-entropy alloy nano-coating high-temperature oxidation-resistant modification preparation process, belonging to the field of coating modification technology. The high-entropy alloy nano-coating high-temperature oxidation-resistant modification preparation process specifically includes the following steps: S1. Target material selection and preparation; S2. Alloy substrate treatment; S3. Low-temperature nanocrystalline coating deposition; S4. Coating densification treatment; S5. Low-temperature recovery annealing; S6. Pre-oxidation treatment. Through the synergistic process of low-temperature preparation of the alloy nano-coating, densification annealing, and pre-oxidation, the high-temperature strength and phase stability of the coating are improved by utilizing the lattice distortion effect. A thermodynamically stable protective oxide film of aluminum oxide and chromium oxide is generated in situ on the surface, solving the problems of traditional chromium-based coatings such as few main components, poor oxidation resistance, and short lifespan. This significantly improves the service reliability and safety of nuclear reactor structural materials under high-temperature irradiation environments.
Owner:YANTAI UNIV

Lead-bismuth corrosion resistant high-entropy alloy and pre-oxidation treatment method thereof

The invention discloses a lead and bismuth corrosion resistant high-entropy alloy and a pre-oxidation treatment method thereof, and belongs to the technical field of lead and bismuth corrosion resistant nuclear structural materials. Ni: 30%; 10% of Cr; 20% of Al; 4.5% of Ti; 10.5% of Co; the microstructure of the high-entropy alloy is characterized by being of a face-centered cubic and body-centered cubic double-phase structure; and the face-centered cubic phase is a disordered structure phase enriched by Fe and Cr. According to the lead and bismuth corrosion resistant high-entropy alloy and the pre-oxidation treatment method thereof, multiple layers of uniform and compact Al2O3, TiO2, Cr2O3 and FeCr2O4 oxide films with protectiveness are generated on the surface of the FeNiCoCrAlTi high-entropy alloy from inside to outside, and the lead and bismuth corrosion resistance of the alloy is remarkably improved. The method is easy to operate, low in cost and excellent in lead and bismuth corrosion resistance.
Owner:XIANGTAN UNIV

Method for forming protective oxide-ceramic coating on surface of valve metals and alloys

ActiveRU2865081C1Oxide ceramicPlasma electrolytic oxidation
FIELD: protective coatings.SUBSTANCE: method for forming a protective oxide-ceramic coating on the surface of products made of valve metals and alloys by the plasma electrolytic oxidation method involves immersing the product as an electrode together with a counter electrode in a bath filled with an aqueous alkaline electrolyte, and supplying rectangular pulses of anodic and cathodic voltage to the electrodes using a pulsed power source. Anode and cathode voltage pulses are supplied with a current-free pause between them, the value of which is 4.8 times the duration of the anode pulse. The amplitude values of the cathode voltage pulses range from 85 to 149 V with a pulse repetition frequency from 1000 Hz to 4000 Hz, while the current pulse repetition frequency is additionally regulated.EFFECT: obtaining oxide-ceramic coatings with specified properties under reduced energy conditions, with lower values of cathode voltage.1 cl, 2 ex
Owner:AKTSIONERNOE OBSHCHESTVO ZAVOD ALIUMINIEVYKH SPLAVOV

Flaky silver-coated copper powder and preparation method thereof

The invention relates to the technical field of silver-coated copper powder, in particular to flaky silver-coated copper powder and a preparation method thereof. Comprising the steps of copper powder pretreatment, flaky copper powder treatment, chemical replacement, cleaning treatment, electroplating enhancement, heat treatment enhancement and the like, oxidation can be prevented through inert atmosphere heat treatment on silver-coated copper powder, recrystallization of a silver layer is promoted, metallurgical bonding is formed through atomic diffusion, and internal stress is eliminated; the oxidation treatment can form a protective oxidation film on the surface of the silver layer, and the reduction treatment can eliminate excessive oxidation and recover conductivity, so that a stable surface state is formed, the high-temperature stability is improved, and the prepared silver-coated copper powder can be used for a long time under an extreme high-temperature condition to slow down oxidation.
Owner:HANGZHOU RUIHENG NEW MATERIAL TECH DEV CO LTD

High-temperature-oxidation-resistant low-silver-content AgCuGa noble metal dual-phase alloy material

The invention discloses a high-temperature-oxidation-resistant low-silver-content AgCuGa noble metal dual-phase alloy material, and belongs to the technical field of silver-copper brazing filler metal alloy preparation. The key point of the silver content AgCuGa noble metal dual-phase alloy material is 60% lt; cu + Ga is smaller than or equal to 65%, and the Ga / Cu ratio is larger than or equal to 0.224. In cooperation with the preparation method, the material is mainly composed of an Ag-rich phase and a Cu-rich phase, Ga is mainly in the Cu-rich phase, the Ag-rich phase only contains a very small amount of Ga element, Ga atoms of the Ga element in the Cu-rich phase are rapidly and autonomously distributed at a high temperature, a Ga2O3-rich continuous compact nano oxide layer is formed on the surface, the oxide film effectively inhibits O atom internal diffusion, the volume ratio of the metal Ga to the Ga2O3 is remarkably reduced, and the material is suitable for large-scale production. And a complete and compact high-protective oxidation film is formed, excellent oxidation resistance is achieved in 700 DEG C air, and the shear strength of a brazed joint is superior to that of Ag-28Cu alloy vacuum brazing under the protection of low-flow inert gas.
Owner:贵研功能材料(云南)有限公司 +1

A method for preparing a zinc-plated hot-formed steel having a shot-blasting-free property

PendingCN122327135AProtective oxideAustenite
This invention belongs to the field of metallurgical technology, and particularly relates to a method for preparing galvanized hot-formed steel with shot-blast-free performance. The method includes the following steps: S1, using a hot-rolled substrate as the raw material for galvanized hot-formed steel and heating it; S2, hot-dip galvanizing the heated hot-rolled substrate to form an Fe2Al5 inhibition layer with a thickness of not less than 300 nm between the zinc layer and the substrate, obtaining a galvanized steel sheet; S3, heating and holding the galvanized steel sheet, wherein the sheet thickness h, heating rate v, and holding time t satisfy a process window jointly defined by the shot-blast-free condition and the austenitization sufficiency condition, causing the Fe2Al5 inhibition layer to decompose and form a protective oxide layer on the steel sheet surface; S4, stamping and quenching. This invention effectively inhibits excessive ZnO oxidation during hot forming through the synergistic effect of the hot-rolled substrate and the coating inhibition layer, achieving shot-blast-free processing.
Owner:RIZHAO STEEL HLDG GROUP

Technological method applied to manufacturing of flash memory device

The invention discloses a process method applied to manufacturing of a flash memory device, which comprises the following steps of: forming a protective oxide layer on a front nitride layer, forming the front nitride layer on a floating gate polycrystalline silicon layer, forming floating gate polycrystalline silicon on a coupling oxide layer, forming the coupling oxide layer on the front surface of a substrate, a back oxide layer is formed on the back surface of the substrate, and a back nitride layer is formed on the back oxide layer; etching to remove the nitride layer on the back surface; forming a first groove and a second groove in the front nitride layer, the floating gate polycrystalline silicon layer, the coupling oxide layer and the substrate through a photoetching process; forming an insulating layer on the front nitride layer; planarization processing is carried out, and the insulating layer outside the first groove and the second groove is removed; etching is carried out, so that the top of the insulating layer in the first groove is lower than the top of the floating gate polycrystalline silicon layer, and the top of the insulating layer in the second groove is lower than the top of the front nitride layer and higher than the top of the floating gate polycrystalline silicon layer; and etching to remove the front nitride layer.
Owner:HUA HONG SEMICON WUXI LTD +2

Method of forming semiconductor structure

A method includes forming trenches in a dielectric stack and a hard mask layer in an array region of a substrate, where a top surface of the hard mask layer in the array region is lower than a top surface of the hard mask layer in a peripheral region. And sequentially forming a bottom electrode layer and a protective oxide layer on the hard mask layer and in the groove. A hard mask is formed on the protective oxide layer in the array region to eliminate the step difference between the array region and the peripheral region, so that the dielectric stacked support layer is kept uniform in the subsequent process, and the protective oxide layer is used for protecting the bottom electrode layer from etching, thereby reducing the possibility of capacitance swing and preventing short circuit.
Owner:NAN YA TECH

Multilayer anode for a solid-state battery, its manufacture and use, and the solid-state battery containing the multilayer anode

The invention relates to a multilayer anode (40) for a solid-state battery, which is applied to an anode current collector (50), comprising or consisting of a first layer (42) and a second layer (44), wherein the first layer (42) comprises one or more metallic elements selected from the group consisting of silver (Ag), magnesium (Mg), gold (Au), palladium (Pd), aluminum (Al), bismuth (Bi), indium (In), tin (Sn), gallium (Ga), platinum (Pt), cadmium (Cd), germanium (Ge), selenium (Se), antimony (Sb), arsenic (As) and / or titanium (Ti), and the second layer (44) consists of a protective oxide layer comprising or consisting of one or more oxides of silicon (Si) and / or the above elements.The invention is characterized in that the ultra-thin multilayer anode according to the invention enables the provision of solid-state batteries with high energy density, which allows for an improvement in the reversibility of the lithium plating / stripping process during charging / discharging and an improvement in the cycle life of the solid-state battery.
Owner:MERCEDES BENZ GROUP AG

A laser cladding alloy coating resistant to sco2 corrosion and surface treatment process

The application belongs to the technical field of surface modification, and particularly relates to a laser cladding alloy coating resistant to SCO2 corrosion and a surface treatment process. The preparation method of the laser cladding alloy coating comprises the following steps: preparing precursor powder comprising Cr@Al2O3 and Al@Al2O3 core-shell structure; adopting laser cladding technology to clad the above-mentioned material on the surface of the substrate to be protected; and then precisely regulating the pressure and oxygen content in the pre-oxidation environment to selectively form a protective oxide film mainly composed of Cr2O3 and Al2O3 on the surface of the coating, so as to effectively inhibit the formation of harmful oxides such as Fe3O4 and NiO. The coating prepared by the application has good combination with the substrate, and the oxide film formed by adjusting the pre-oxidation environment has good supercritical carbon dioxide corrosion resistance.
Owner:ZHEJIANG UNIV OF TECH

Multi-layer anode for a solid-state battery, production and use thereof, and the solid-state battery containing the multi-layer anode

The invention relates to a multi-layer anode (40) for a solid-state battery, said anode being applied to an anode current collector (50) and comprising or consisting of a first layer (42) and a second layer (44), wherein the first layer (42) has one or more metal elements selected from the group consisting of silver (Ag), magnesium (Mg), gold (Au), palladium (Pd), aluminum (Al), bismuth (Bi), indium (In), tin (Sn), gallium (Ga), platinum (Pt), cadmium (Cd), germanium (Ge), selenium (Se), antimony (Sb), arsenic (As) and / or titanium (Ti), and the second layer (44) consists of a protective oxide layer which has or consists of one or more oxides of silicon (Si) and / or the above elements. The invention is distinguished by the fact that the ultrathin multi-layer anode according to the invention makes it possible to provide solid-state batteries which exhibit high energy density, making it possible to improve the reversibility of the lithium plating / stripping process during charging / discharging and to improve the cycle life of the solid-state battery.
Owner:MERCEDES BENZ GROUP AG

Method for treating a metal part of a primary circuit of a water-cooled nuclear reactor

A method treats an internal surface of a metal part made from a nickel-based or cobalt-based alloy of a primary circuit during an operating cycle of a PWR reactor. The method includes estimating a quantity of nickel discharged into the primary circuit by the metal parts of the primary circuit in contact with water of the primary circuit, during an operating cycle of the reactor; calculating a quantity of magnetite necessary for fixing the whole of the quantity of nickel estimated; forming a treated water by dissolving the quantity of magnetite calculated in the water of the primary circuit when the water has a temperature of between 80° C. and 180° C.; and putting this treated water in circulation in the primary circuit so as to form, on the internal surface of at least one metal part, a layer of a protective oxide to fix the quantity of nickel estimated.
Owner:COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Method of forming semiconductor device and semiconductor device

A method of forming a semiconductor device includes forming a hard mask layer on a plurality of outer surfaces of a plurality of nanostructure layers of a stack, where the hard mask layer includes a dielectric substrate material and a protective oxide surface. A dummy gate is formed on the hard mask layer. A gate sidewall spacer is formed adjacent the dummy gate. A source / drain region is formed. The dummy gate is removed. The plurality of nanostructure layers of the stack of the first group are selectively removed relative to the plurality of nanostructure layers of the stack of the second group. The plurality of nanostructure layers of the second set provide a suspended channel region supported by the internal spacer. A damage pathway blocking portion of at least the dielectric substrate material of the hard mask layer is present between the inner spacer and the gate sidewall spacer.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

Transistor spacer structures and methods of forming

A method of forming a semiconductor device that includes forming a hard mask layer on exterior surfaces of a stack of nanostructure layers, in which the hard mask layer including a dielectric base material and a protective oxide surface. A dummy gate is formed on the hard mask layer. A gate sidewall spacer is formed abutting the dummy gate. Source / drain regions are formed. The dummy gate is removed. A first set of the stack of nanostructure layers is removed selectively to a second set of the set of nanostructure layers. The second set of nanostructure layers provides suspended channel regions supported by an inner spacer. A damage path blocking portion of at least the dielectric base material of the hard mask layer is present between the inner spacer and the gate sidewall spacer.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

Metallic alloy with protective oxide layer, method for making the same and apparatus for forming at least an oxide layer at the surface of a metallic alloy

The present invention relates to high-temperature oxidation processes for metallic materials. More particularly, it pertains to methods for forming protective, thermally grown oxide layers—such as chromia (Cr₂O₃) and alumina (Al₂O₃)—on various chromium- and aluminum-containing alloys through controlled formation of oxide layers that act as a barrier protecting the alloy substrates, and to coated metals produced by these methods.
Owner:TERRABARRIER AB

Metallographic sample for protecting oxidation film and preparation process of metallographic sample

The invention provides a metallographic sample for protecting an oxidation film and a preparation process of the metallographic sample, and belongs to the technical field of metallographic sample preparation. The preparation process comprises the following steps: pre-treating a to-be-treated metallographic specimen, keeping a surface oxidation film of the metallographic specimen complete, and selecting a typical region; chemical nickel plating is conducted on the typical area of the oxidation film of the metallographic specimen to be treated, so that a nickel plating layer is formed on the surface of the oxidation film; performing vacuum impregnation and cold inlaying on the nickel-plated layer by adopting epoxy resin and a curing agent to form an inlaying protective layer; and sequentially carrying out polishing treatment, polishing treatment, cleaning and drying treatment on the embedded protection layer. According to the metallographic sample preparation process for protecting the oxidation film, the original characteristics can be completely reserved, the film layer is prevented from being peeled off or deformed, and the structure, thickness and composition of the metal surface oxidation film and the bonding state of the metal surface oxidation film and the matrix can be analyzed easily.
Owner:HUANENG JILIN POWER GENERATION JIUTAI ELECTRIC FACTORY +1

Temperature independent, low switching energy quantum switch for nonvolatile memories

A temperature independent, low switching energy nonvolatile switching device capable of high-temperature static storage is described. The device is useful as deep nanoscale structures such as nanowires and nanosheets. The device body, sandwiched between conducting electrodes and having a surface not covered by the conducting electrodes, is fabricated using carbon-doped transition metal oxides or carbon-doped post transition metal oxides, with a neutral, non-switching, surface passivation protective oxide covering at least a portion of the surface, whereby, quantum-based metal-insulator phase transitions are produced. Transverse and longitudinal configurations have enhanced switching endurance with low fatigue. Memory arrays using these switchable resistance devices are described.
Owner:SYMETRIX CORP

Method for producing support substrate for bonded wafer, and support substrate for bonded wafer

A producing method of a handle wafer for a bonded wafer produced by bonding an active wafer and the handle wafer through an insulation film includes: preparing a handle wafer body made from a monocrystalline silicon wafer; forming an oxide film on the handle wafer body; depositing a polycrystalline silicon layer on the oxide film; forming a protective oxide film on a surface of the polycrystalline silicon layer; and polishing to remove the protective oxide film and polishing the polycrystalline silicon layer.
Owner:SUMCO CORP

LDMOS with enhanced safe operating area and method of manufacturing the same

ActiveCN114188414BLDMOSElectrical connection
The present disclosure relates to LDMOS with enhanced safe operating area and methods of manufacturing the same. An integrated circuit, comprising: an n-type drift region; a gate structure directly on a first portion of the n-type drift region; a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure separated by a length of the drift region; a resistive protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure; a field plate contact providing a direct electrical connection to the resistive protective oxide.
Owner:TSMC CHINA COMPANY +1

Compositions and methods for corrosion-resistant ferritic stainless steel

In some embodiments, a coating applied to steel reinforcement bar (e.g., steel rebar) that could considerably extend the lifetime of concrete structures by reducing steel rebar corrosion is disclosed. The coating includes a thin, passivating steel (e.g., stainless steel) layer that is applied to the outside of conventional steel rebar. The coating can be applied in-line through metal cold spray manufacturing, which is a high throughput coating technique that can be integrated into existing steel manufacturing plants. Furthermore, a novel, high performance ferritic steel with tailored resistance to corrosion from chlorides is described. The new ferritic steel is distinct from other commercial and experimental steels, and is better suited for coating low-cost steel structures like rebar. Multiple alloying elements including Cr, Al, and Si will each form protective oxides independently, increasing the total amount of protection and extending it over much wider ranges of pH and electrical potential.
Owner:ALLIUM ENGINEERING INC