130 results about "Protective oxide" patented technology

An austenitic stainless steel having excellent resistance to scale peeling which can suppress peeling of a protective oxide scale which is formed on the steel surface even when the steel undergoes repeated cycles of high temperature heating and cooling and which is suitable for use in a high temperature, humidified gas environment at a high temperature and particularly at 1023 K or above has a steel composition consisting essentially of C: 0.01-0.15%, Si: 0.01-3%, Mn: 0.01-2%, Cu: 0.1-2.5%, Cr: 23-30%, Ni: 16-25%, Al: 0.005-0.20%, N: 0.001-0.40%, P: at most 0.04%, S: at most 0.01%, at least one of Y and Ln series elements: a total of 0.005-0.1%, and a balance of Fe and unavoidable impurities, with the number of inclusions containing Y and Ln series elements in the steel surface being at most 5×10⁻³/μm².

An MTJ cell without footings and free from electrical short-circuits across a tunneling barrier layer is formed by using a Ta hard mask layer and a combination of etches. A first etch patterns the Ta hard mask, while a second etch uses O₂ applied in a single high power process at two successive different power levels. A first power level of between approximately 200 W and 500 W removes BARC, photoresist and Ta residue from the first etch, the second power level, between approximately 400 W and 600 W continues an etch of the stack layers and forms a protective oxide around the etched sides of the stack. Finally, an etch using a carbon, hydrogen and oxygen gas completes the etch while the oxide layer protects the cell from short-circuits across the lateral edges of the barrier layer.

Prior art protective layers can exercise their protecting function because they are depleted in a specific element which forms a protective oxide, or which is used as sacrificial material. When said material has been consumed, the protecting function can no longer be provided. The invention is characterized in that it consists in using powder particles comprising a reserve of the consumed material, which is delivered in delayed manner. Therefor, the material is enclosed in an envelope.

A method of manufacturing a semiconductor device. In the method, a substrate is prepared, which includes a buried oxide film and a SiGe layer formed on the buried oxide film. Then, heat treatment is performed on the substrate at a temperature equal to or lower than a first temperature, to form a protective oxide film on a surface of the SiGe layer. Next, the substrate having the protective oxide film is heated in a non-oxidizing atmosphere to a second temperature higher than the first temperature. Further, heat treatment is performed on the substrate thus heated, in an oxidizing atmosphere at a temperature equal to or higher than the second temperature, to form oxide the SiGe layer, make the SiGe layer thinner and increasing Ge concentration in the SiGe layer, thus forming a SiGe layer having the increased Ge concentration.

An alloy suitable for coating metal surfaces is provided in which the alloy provides a liquid melt which contains a fraction of dissolved oxide forming additives as deoxidizers. The alloyed combination of elements in the liquid melt resists compound formation thus preserving the chemical activity of the individual elements. In a coating application, the alloy may form a coating that can interact with and remove the oxide or residual oxide coating of the base metal to be coated, i.e., scrub the surface of the metal clean. This results in increased coating bond strength and the ability to bond effectively to normally difficult alloys such as stainless steel, refractory metals (W, Ti, Ta etc.), or aluminum alloys which form protective oxide layers.

A method is provided for coating a steel surface of a workpiece. According to an aspect of the invention, a steel workpiece is subjected to a first embrittlement-relief baking operation to form a protective oxide layer on the steel surface. The protective oxide layer is de-scaled, and the steel surface is activated. A hydrogen barrier coating is deposited on the activated steel surface, and activated. A zinc-nickel alloy is plated on the barrier coating, and subjected to a second embrittlement-relief baking operation. The porous plating is sealed with a conversion coat. The method is especially useful in making low to no hydrogen embrittlement cadmium-replacement steel parts. Also provided is a corrosion resistant coated steel workpiece.

A water-cooled stator bar clip for electrical generators and a method for applying a corrosion-resistant protective coating, preferably Sc, Ti, Cr, Zr, Nb, Mo, Hf, Ta, W, Ni, and Al, and their alloys or oxides to existing stator bar end fittings in order to significantly reduce the possibility of leaks through the brazed connections of the copper stator bar end connections. The coatings can be applied locally using various known physical vapor deposition (“PVD”), chemical vapor deposition (“CVD”) or other direct coating techniques known in the art. For example, the coatings can be applied using ion plasma deposition, sputtering or wire arc techniques (all PVD processes) or by using electroplating, high velocity oxygen free (“HVOF”) deposition, DC arc or electroless plating. Preferably, the coatings are applied either to new stator bar clips or to existing clips in the field using a known pencil coater technique. After being deposited, the metallic coatings form a protective oxide layers over the existing copper brazed joint after being exposed to a water environment, thereby protecting the chemical and structural integrity of the underlying copper brazed joint.

The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device, among other possible steps, forming a polysilicon gate electrode (250) over a substrate (210) and forming a protective layer (260) over the polysilicon gate electrode (250) to provide a capped polysilicon gate electrode (230). The method further includes forming a protective oxide (510) on a surface proximate the polysilicon gate electrode (250), and removing the protective oxide (510) using a wet etch, the wet etch not having a substantial impact on the protective layer (260).

Chemically and mechanically protective oxide film was formed on Mg alloys using micro-arc oxidation (MAO) methods. Further modification of the obtained MAO surfaces was made in various aspects and the processes thereof were described. Firstly, the protection is enhanced by forming super-hydrophobic surfaces, with water contact angle higher than 140°, attributed to hierarchical nano-micro structures. Secondly, the electrical property of the MAO surfaces is modified. A film with sheet resistance as low as 0.05 Ω/sq is achieved by electro-less Ni deposition on MAO surfaces. Thirdly, black colors are achieved by the sol-gel process on MAO samples.

An alloy and metal matrix composite (MMC) based on a refractory metal such as rhenium resists oxidation by the inclusion of alloying substances with affinity for oxygen or other oxidizing substances. Rhenium enjoys excellent high temperature strength but oxidizes at a much lower temperature. This reduces its desirability for hot, stressed environments. The addition of substances, such as soluble metals, that attract oxygen may form a protective oxide layer over the remaining portion of the rhenium-alloy part or piece. Such soluble alloying constituents may include chromium, cobalt, nickel, titanium, thorium, aluminum, hafnium, vanadium, silicon, aluminum, and yttrium. The addition of second phase fiber or particulates such as carbides of silicon, tungsten, titanium and/or boron provides additional wear resistance in the formation of a resulting metal matrix composite (MMC).

Thermal batteries using molten nitrate electrolytes offer significantly higher cell voltages and marked improvements in energy and power densities over present thermal batteries. However, a major problem is gas-evolution reactions involving the molten nitrate electrolytes. This gassing problem has blocked the advantages offered by thermal batteries using molten nitrates. The solution to this problem is the use of chloride-free molten nitrate electrolytes. Most important is the avoidance of potassium perchlorate (KClO₄) or any other chlorine-containing substances that can decompose to produce chloride ions in any thermal battery component. The Fe+KClO₄ pyrotechnic used to activate thermal batteries is a key example. The decomposition of such substances into chloride ions (Cl⁻) results in passivating-film breakdown and gas-producing reactions with the molten nitrate electrolyte. These reactions largely involve the lithium-component of the anode used in thermal batteries such as Li—Fe (LAN), Li—Si, and Li—Al. The introduction of chloride ions into the nitrate melt via the pyrotechnic materials produces a rapid breakdown of the protective oxide film on lithium-based anodes and leads to gas-producing reactions.

Air gaps are formed between bit lines by etching to remove sacrificial material from between bit lines. Bit lines are protected from etch damage. Sacrificial material may be selectively oxidized prior to deposition of bit line metal so that protective oxide lies along sides of bit lines during etch. Portions of protective material may be selectively formed on tops of bit lines prior to etching sacrificial material.

A dense and well adhered spinel coating such as CuMn_1.8O₄, when deposited on a stainless steel substrate by electrophoretic deposition, significantly reduces the oxidation rate of the steel compared to the uncoated steel at elevated temperature. The protective oxide spinel coating is useful for preparing solid oxide fuel cell interconnects having long term stability at 800° C.

Coatings suitable for use as protective oxide-forming coatings on Nb-based substrates exposed to high temperatures and oxidative environments. The coatings contain chromium and/or molybdenum, preferably contains silicon, and optionally contains niobium, titanium, hafnium, iron, rhenium, tantalum, and/or tungsten, which in combination form multiple intermetallic phases, which in combination form one or more intermetallic phases that promote the formation of a slow-growing oxide scale. Depending on the particular coating composition, the intermetallic phases may be: a silicon-modified Cr₂Nb Laves phase and optionally a chromium solid solution phase, a CrNbSi intermetallic phase, and/or an M₃Si intermetallic phase where M is niobium, titanium, and/or chromium; or M₅Si₃, MSi₂ and/or M₃Si₂ where M is molybdenum, niobium, titanium, chromium, hafnium, iron, rhenium, tantalum, and/or tungsten.

A method for forming STIs in a semiconductor substrate includes forming a protective oxide film on the semiconductor substrate and forming a silicon nitride film on the protective oxide film, performing a photolithography and a dry etching so as to penetrate the silicon nitride film and the protective oxide film and remove part of the semiconductor substrate, thus forming groove portions, forming a buried oxide film in the groove portions and on the silicon nitride film, removing the buried oxide film on the silicon nitride film and a surface portion of the silicon nitride film by a CMP, and removing part of the buried oxide film deposited in the groove portions by a wet etching. It is possible to provide a method for producing STIs capable of forming uniform STI step heights in a semiconductor device with a fine structure.

An alloy based on a refractory metal such as rhenium resists oxidation by the inclusion of alloying substances with affinity for oxygen or other oxidizing substances. This alloy has excellent high temperature strength and will resist oxidation. The alloy includes oxidation resistant substances, such as soluble metals, that attract oxygen and may form a protective oxide layer over the remaining portion of the rhenium-alloy part or piece. Such soluble alloying constituents may include chromium, cobalt, nickel, titanium, thorium, aluminum, hafnium, vanadium, silicon, aluminum, and yttrium.

A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.