31 results about "Protective oxide" patented technology

This invention provides a high-entropy alloy nano-coating high-temperature oxidation-resistant modification preparation process, belonging to the field of coating modification technology. The high-entropy alloy nano-coating high-temperature oxidation-resistant modification preparation process specifically includes the following steps: S1. Target material selection and preparation; S2. Alloy substrate treatment; S3. Low-temperature nanocrystalline coating deposition; S4. Coating densification treatment; S5. Low-temperature recovery annealing; S6. Pre-oxidation treatment. Through the synergistic process of low-temperature preparation of the alloy nano-coating, densification annealing, and pre-oxidation, the high-temperature strength and phase stability of the coating are improved by utilizing the lattice distortion effect. A thermodynamically stable protective oxide film of aluminum oxide and chromium oxide is generated in situ on the surface, solving the problems of traditional chromium-based coatings such as few main components, poor oxidation resistance, and short lifespan. This significantly improves the service reliability and safety of nuclear reactor structural materials under high-temperature irradiation environments.

The invention discloses a lead and bismuth corrosion resistant high-entropy alloy and a pre-oxidation treatment method thereof, and belongs to the technical field of lead and bismuth corrosion resistant nuclear structural materials. Ni: 30%; 10% of Cr; 20% of Al; 4.5% of Ti; 10.5% of Co; the microstructure of the high-entropy alloy is characterized by being of a face-centered cubic and body-centered cubic double-phase structure; and the face-centered cubic phase is a disordered structure phase enriched by Fe and Cr. According to the lead and bismuth corrosion resistant high-entropy alloy and the pre-oxidation treatment method thereof, multiple layers of uniform and compact Al2O3, TiO2, Cr2O3 and FeCr2O4 oxide films with protectiveness are generated on the surface of the FeNiCoCrAlTi high-entropy alloy from inside to outside, and the lead and bismuth corrosion resistance of the alloy is remarkably improved. The method is easy to operate, low in cost and excellent in lead and bismuth corrosion resistance.

FIELD: protective coatings.SUBSTANCE: method for forming a protective oxide-ceramic coating on the surface of products made of valve metals and alloys by the plasma electrolytic oxidation method involves immersing the product as an electrode together with a counter electrode in a bath filled with an aqueous alkaline electrolyte, and supplying rectangular pulses of anodic and cathodic voltage to the electrodes using a pulsed power source. Anode and cathode voltage pulses are supplied with a current-free pause between them, the value of which is 4.8 times the duration of the anode pulse. The amplitude values of the cathode voltage pulses range from 85 to 149 V with a pulse repetition frequency from 1000 Hz to 4000 Hz, while the current pulse repetition frequency is additionally regulated.EFFECT: obtaining oxide-ceramic coatings with specified properties under reduced energy conditions, with lower values of cathode voltage.1 cl, 2 ex

The present invention discloses a wire drawing process for the copper conductor of a liquid-cooled ultra-fast charging pile cable, including a copper wire drawing process, and the copper wire drawing process specifically includes a wire drawing speed control process and the concentration of wire drawing oil. By adding an appropriate dose of antioxidant, copper sulfate is used, which is usually used to form a protective oxide film to prevent the oxidation of copper materials. Ethylenediamine is used, which is commonly used as a corrosion inhibitor to slow down the corrosion rate of copper. Copper phosphate is used, which can be used as a rust inhibitor to form a protective oxide film. Preservatives and surfactants are used to improve the adhesion and corrosion resistance of the coating, forming a protective film on the surface of the copper wire to isolate the air and reduce the oxidation of the copper wire. At the same time, the antioxidant can also reduce the friction on the surface of the copper wire, reduce wear, improve the wire drawing efficiency and product quality, and avoid the problem that during the production process of copper wire drawing, the copper wire will rub against components such as dies and guide wheels, resulting in an increase in the surface temperature of the copper wire and easy oxidation.

The invention relates to the technical field of silver-coated copper powder, in particular to flaky silver-coated copper powder and a preparation method thereof. Comprising the steps of copper powder pretreatment, flaky copper powder treatment, chemical replacement, cleaning treatment, electroplating enhancement, heat treatment enhancement and the like, oxidation can be prevented through inert atmosphere heat treatment on silver-coated copper powder, recrystallization of a silver layer is promoted, metallurgical bonding is formed through atomic diffusion, and internal stress is eliminated; the oxidation treatment can form a protective oxidation film on the surface of the silver layer, and the reduction treatment can eliminate excessive oxidation and recover conductivity, so that a stable surface state is formed, the high-temperature stability is improved, and the prepared silver-coated copper powder can be used for a long time under an extreme high-temperature condition to slow down oxidation.

The invention discloses a high-temperature-oxidation-resistant low-silver-content AgCuGa noble metal dual-phase alloy material, and belongs to the technical field of silver-copper brazing filler metal alloy preparation. The key point of the silver content AgCuGa noble metal dual-phase alloy material is 60% lt; cu + Ga is smaller than or equal to 65%, and the Ga / Cu ratio is larger than or equal to 0.224. In cooperation with the preparation method, the material is mainly composed of an Ag-rich phase and a Cu-rich phase, Ga is mainly in the Cu-rich phase, the Ag-rich phase only contains a very small amount of Ga element, Ga atoms of the Ga element in the Cu-rich phase are rapidly and autonomously distributed at a high temperature, a Ga2O3-rich continuous compact nano oxide layer is formed on the surface, the oxide film effectively inhibits O atom internal diffusion, the volume ratio of the metal Ga to the Ga2O3 is remarkably reduced, and the material is suitable for large-scale production. And a complete and compact high-protective oxidation film is formed, excellent oxidation resistance is achieved in 700 DEG C air, and the shear strength of a brazed joint is superior to that of Ag-28Cu alloy vacuum brazing under the protection of low-flow inert gas.

In some embodiments, a coating applied to steel reinforcement bar (e.g., steel rebar) that could considerably extend the lifetime of concrete structures by reducing steel rebar corrosion is disclosed. The coating includes a thin, passivating steel (e.g., stainless steel) layer that is applied to the outside of conventional steel rebar. The coating can be applied in-line through metal cold spray manufacturing, which is a high throughput coating technique that can be integrated into existing steel manufacturing plants. Furthermore, a novel, high performance ferritic steel with tailored resistance to corrosion from chlorides is described. The new ferritic steel is distinct from other commercial and experimental steels, and is better suited for coating low-cost steel structures like rebar. Multiple alloying elements including Cr, Al, and Si will each form protective oxides independently, increasing the total amount of protection and extending it over much wider ranges of pH and electrical potential.

The invention discloses a process method for manufacturing a flash memory device, which comprises the following steps of: forming a coupling oxide layer with the thickness of 50 angstroms to 150 angstroms on a substrate; forming a floating gate polycrystalline silicon layer on the coupling oxide layer, wherein the floating gate polycrystalline silicon layer is used for preparing a floating gate of the flash memory; forming a protective oxide layer on the floating gate polycrystalline silicon layer, wherein the protective oxide layer is used for protecting the floating gate polycrystalline silicon layer in a subsequent wet etching process; forming a nitride layer on the protective oxide layer; and removing the nitride layer through a wet etching process. In the manufacturing process of the flash memory device, after the floating gate polycrystalline silicon layer is formed, the protective oxide layer is formed on the floating gate polycrystalline silicon, so that the floating gate polycrystalline silicon layer can be protected in the subsequent wet etching process, the floating gate polycrystalline silicon layer is prevented from generating defects and being damaged, the uniformity of the floating gate polycrystalline silicon layer is improved, and the yield of the flash memory device is improved. The coupling of the word line and the control gate to the floating gate of the device is improved, and the leakage current phenomenon of the device is improved.

This invention belongs to the field of metallurgical technology, and particularly relates to a method for preparing galvanized hot-formed steel with shot-blast-free performance. The method includes the following steps: S1, using a hot-rolled substrate as the raw material for galvanized hot-formed steel and heating it; S2, hot-dip galvanizing the heated hot-rolled substrate to form an Fe2Al5 inhibition layer with a thickness of not less than 300 nm between the zinc layer and the substrate, obtaining a galvanized steel sheet; S3, heating and holding the galvanized steel sheet, wherein the sheet thickness h, heating rate v, and holding time t satisfy a process window jointly defined by the shot-blast-free condition and the austenitization sufficiency condition, causing the Fe2Al5 inhibition layer to decompose and form a protective oxide layer on the steel sheet surface; S4, stamping and quenching. This invention effectively inhibits excessive ZnO oxidation during hot forming through the synergistic effect of the hot-rolled substrate and the coating inhibition layer, achieving shot-blast-free processing.

The invention discloses a process method applied to manufacturing of a flash memory device, which comprises the following steps of: forming a protective oxide layer on a front nitride layer, forming the front nitride layer on a floating gate polycrystalline silicon layer, forming floating gate polycrystalline silicon on a coupling oxide layer, forming the coupling oxide layer on the front surface of a substrate, a back oxide layer is formed on the back surface of the substrate, and a back nitride layer is formed on the back oxide layer; etching to remove the nitride layer on the back surface; forming a first groove and a second groove in the front nitride layer, the floating gate polycrystalline silicon layer, the coupling oxide layer and the substrate through a photoetching process; forming an insulating layer on the front nitride layer; planarization processing is carried out, and the insulating layer outside the first groove and the second groove is removed; etching is carried out, so that the top of the insulating layer in the first groove is lower than the top of the floating gate polycrystalline silicon layer, and the top of the insulating layer in the second groove is lower than the top of the front nitride layer and higher than the top of the floating gate polycrystalline silicon layer; and etching to remove the front nitride layer.

The invention belongs to the technical field of semiconductor manufacturing, and provides a method for forming bigrids in a BCD process. According to the method, the gate oxide layers with different thicknesses are respectively formed in the high-voltage device region and the low-voltage device region, so that the problem that the oxide layers are damaged in the process removal process due to the thickness difference of the gate oxide layers in the high-voltage device region and the low-voltage device region is solved. The method comprises the following specific steps: forming an initial gate oxide layer in a high-voltage device region and a low-voltage device region of a substrate, depositing polycrystalline silicon as a gate material, forming a gate pattern of the high-voltage device region through photoetching and etching, depositing a protective oxide layer, and etching away the oxide layer and the gate oxide layer of the low-voltage device region, and forming a gate oxide layer of the low-voltage device region through thermal oxidation, depositing polycrystalline silicon as a gate, forming a gate pattern of the low-voltage device region, and finally removing the redundant oxide layer through a wet method. According to the invention, isolation failure and electric leakage at the junction position of the high-voltage and low-voltage device areas are effectively reduced, the performance and reliability of the device are improved, and the device has a wide application prospect.

A method includes forming trenches in a dielectric stack and a hard mask layer in an array region of a substrate, where a top surface of the hard mask layer in the array region is lower than a top surface of the hard mask layer in a peripheral region. And sequentially forming a bottom electrode layer and a protective oxide layer on the hard mask layer and in the groove. A hard mask is formed on the protective oxide layer in the array region to eliminate the step difference between the array region and the peripheral region, so that the dielectric stacked support layer is kept uniform in the subsequent process, and the protective oxide layer is used for protecting the bottom electrode layer from etching, thereby reducing the possibility of capacitance swing and preventing short circuit.

The invention relates to a multilayer anode (40) for a solid-state battery, which is applied to an anode current collector (50), comprising or consisting of a first layer (42) and a second layer (44), wherein the first layer (42) comprises one or more metallic elements selected from the group consisting of silver (Ag), magnesium (Mg), gold (Au), palladium (Pd), aluminum (Al), bismuth (Bi), indium (In), tin (Sn), gallium (Ga), platinum (Pt), cadmium (Cd), germanium (Ge), selenium (Se), antimony (Sb), arsenic (As) and / or titanium (Ti), and the second layer (44) consists of a protective oxide layer comprising or consisting of one or more oxides of silicon (Si) and / or the above elements.The invention is characterized in that the ultra-thin multilayer anode according to the invention enables the provision of solid-state batteries with high energy density, which allows for an improvement in the reversibility of the lithium plating / stripping process during charging / discharging and an improvement in the cycle life of the solid-state battery.

The application belongs to the technical field of surface modification, and particularly relates to a laser cladding alloy coating resistant to SCO2 corrosion and a surface treatment process. The preparation method of the laser cladding alloy coating comprises the following steps: preparing precursor powder comprising Cr@Al2O3 and Al@Al2O3 core-shell structure; adopting laser cladding technology to clad the above-mentioned material on the surface of the substrate to be protected; and then precisely regulating the pressure and oxygen content in the pre-oxidation environment to selectively form a protective oxide film mainly composed of Cr2O3 and Al2O3 on the surface of the coating, so as to effectively inhibit the formation of harmful oxides such as Fe3O4 and NiO. The coating prepared by the application has good combination with the substrate, and the oxide film formed by adjusting the pre-oxidation environment has good supercritical carbon dioxide corrosion resistance.

The present invention provides a special-shaped groove isolated gate IGBT structure and a manufacturing method thereof, relating to the technical field of IGBT structures. An n-type substrate is arranged above the collector. Regularly arranged vertical grooves are provided inside the n-type substrate. There are oxide layers and polycrystalline layers in the grooves. P-type wells are arranged between adjacent grooves. An n+ emitter region and a p+ short-circuit region are arranged in the p-type wells. The n+ emitter region is located at the upper edge of the p-type well, and the p+ short-circuit region is located in the middle of the n+ emitter region. A protective oxide layer and an emitter metal are provided at the top of the groove. A metal layer is arranged in the protective oxide layer to form an emitter and a gate. Compared with the prior art, the beneficial effects of the present invention are as follows: In the IGBT device, the isolated gate adopts an up-and-down structure. Through a unique two-time etching groove process, the internal structure of the produced IGBT device is compact and seamless, which can reduce the Miller capacitance of the IGBT device, improve the switching speed of the IGBT, and effectively reduce the switching loss.

The invention relates to a multi-layer anode (40) for a solid-state battery, said anode being applied to an anode current collector (50) and comprising or consisting of a first layer (42) and a second layer (44), wherein the first layer (42) has one or more metal elements selected from the group consisting of silver (Ag), magnesium (Mg), gold (Au), palladium (Pd), aluminum (Al), bismuth (Bi), indium (In), tin (Sn), gallium (Ga), platinum (Pt), cadmium (Cd), germanium (Ge), selenium (Se), antimony (Sb), arsenic (As) and / or titanium (Ti), and the second layer (44) consists of a protective oxide layer which has or consists of one or more oxides of silicon (Si) and / or the above elements. The invention is distinguished by the fact that the ultrathin multi-layer anode according to the invention makes it possible to provide solid-state batteries which exhibit high energy density, making it possible to improve the reversibility of the lithium plating / stripping process during charging / discharging and to improve the cycle life of the solid-state battery.

A method treats an internal surface of a metal part made from a nickel-based or cobalt-based alloy of a primary circuit during an operating cycle of a PWR reactor. The method includes estimating a quantity of nickel discharged into the primary circuit by the metal parts of the primary circuit in contact with water of the primary circuit, during an operating cycle of the reactor; calculating a quantity of magnetite necessary for fixing the whole of the quantity of nickel estimated; forming a treated water by dissolving the quantity of magnetite calculated in the water of the primary circuit when the water has a temperature of between 80° C. and 180° C.; and putting this treated water in circulation in the primary circuit so as to form, on the internal surface of at least one metal part, a layer of a protective oxide to fix the quantity of nickel estimated.

A producing method of a handle wafer for a bonded wafer produced by bonding an active wafer and the handle wafer through an insulation film includes: preparing a handle wafer body made from a monocrystalline silicon wafer; forming an oxide film on the handle wafer body; depositing a polycrystalline silicon layer on the oxide film; forming a protective oxide film on a surface of the polycrystalline silicon layer; and polishing to remove the protective oxide film and polishing the polycrystalline silicon layer.

The invention discloses a method for improving high-temperature oxidation resistance of an MAX phase, which comprises the following steps: introducing an oxidation film forming element A'to carry out solution treatment on A site in the MAX phase to prepare an MAX phase solid solution; the MAX-phase solid solution can generate a protective oxidation film on the surface in situ in a high-temperature oxidation environment. The solid solution A'atoms are preferentially diffused to the surface of the material in the high-temperature oxidation process to form a continuous and compact oxidation layer, the oxidation layer can effectively prevent the A atoms from diffusing to the surface to generate oxidation reaction, meanwhile, oxygen atoms can be prevented from penetrating through the oxidation layer to diffuse inwards, and therefore the high-temperature oxidation resistance of the MAX phase is remarkably improved.

A method of forming a semiconductor device includes forming a hard mask layer on a plurality of outer surfaces of a plurality of nanostructure layers of a stack, where the hard mask layer includes a dielectric substrate material and a protective oxide surface. A dummy gate is formed on the hard mask layer. A gate sidewall spacer is formed adjacent the dummy gate. A source / drain region is formed. The dummy gate is removed. The plurality of nanostructure layers of the stack of the first group are selectively removed relative to the plurality of nanostructure layers of the stack of the second group. The plurality of nanostructure layers of the second set provide a suspended channel region supported by the internal spacer. A damage pathway blocking portion of at least the dielectric substrate material of the hard mask layer is present between the inner spacer and the gate sidewall spacer.

A method of forming a semiconductor device that includes forming a hard mask layer on exterior surfaces of a stack of nanostructure layers, in which the hard mask layer including a dielectric base material and a protective oxide surface. A dummy gate is formed on the hard mask layer. A gate sidewall spacer is formed abutting the dummy gate. Source / drain regions are formed. The dummy gate is removed. A first set of the stack of nanostructure layers is removed selectively to a second set of the set of nanostructure layers. The second set of nanostructure layers provides suspended channel regions supported by an inner spacer. A damage path blocking portion of at least the dielectric base material of the hard mask layer is present between the inner spacer and the gate sidewall spacer.

The present invention relates to high-temperature oxidation processes for metallic materials. More particularly, it pertains to methods for forming protective, thermally grown oxide layers—such as chromia (Cr₂O₃) and alumina (Al₂O₃)—on various chromium- and aluminum-containing alloys through controlled formation of oxide layers that act as a barrier protecting the alloy substrates, and to coated metals produced by these methods.

In some embodiments, a coating applied to steel reinforcement bar (e.g., steel rebar) that could considerably extend the lifetime of concrete structures by reducing steel rebar corrosion is disclosed. The coating includes a thin, passivating steel (e.g., stainless steel) layer that is applied to the outside of conventional steel rebar. The coating can be applied in-line through metal cold spray manufacturing, which is a high throughput coating technique that can be integrated into existing steel manufacturing plants. Furthermore, a novel, high performance ferritic steel with tailored resistance to corrosion from chlorides is described. The new ferritic steel is distinct from other commercial and experimental steels, and is better suited for coating low-cost steel structures like rebar. Multiple alloying elements including Cr, Al, and Si will each form protective oxides independently, increasing the total amount of protection and extending it over much wider ranges of pH and electrical potential.

The invention provides a metallographic sample for protecting an oxidation film and a preparation process of the metallographic sample, and belongs to the technical field of metallographic sample preparation. The preparation process comprises the following steps: pre-treating a to-be-treated metallographic specimen, keeping a surface oxidation film of the metallographic specimen complete, and selecting a typical region; chemical nickel plating is conducted on the typical area of the oxidation film of the metallographic specimen to be treated, so that a nickel plating layer is formed on the surface of the oxidation film; performing vacuum impregnation and cold inlaying on the nickel-plated layer by adopting epoxy resin and a curing agent to form an inlaying protective layer; and sequentially carrying out polishing treatment, polishing treatment, cleaning and drying treatment on the embedded protection layer. According to the metallographic sample preparation process for protecting the oxidation film, the original characteristics can be completely reserved, the film layer is prevented from being peeled off or deformed, and the structure, thickness and composition of the metal surface oxidation film and the bonding state of the metal surface oxidation film and the matrix can be analyzed easily.

The present invention relates to the technical field of cables, and discloses a copper conductor for a salt spray-resistant and moisture-resistant offshore wind power cable, including a rubber outer cable sheath. In the present invention, the first core layer is made of sulfate compounds, such as copper sulfate, which is usually used to form a protective oxide film to prevent the oxidation of copper materials. The content of sulfates is between 1% and 10%. The second core layer is made of organic amine compounds, such as ethylenediamine, which is commonly used as a corrosion inhibitor to slow down the corrosion rate of copper. The content of organic amine compounds is between 0.5% and 5%. The third core layer is made of phosphate compounds, such as copper phosphate, which can be used as an anti-rust agent to form a protective oxide film. The content of phosphate compounds is between 0.1% and 2%. The fourth core layer is made of preservatives and surfactants, which are used to improve the adhesion and corrosion resistance of the coating. The content of the mixed components is between 0.1% and 1%, which can improve the salt spray resistance and moisture resistance of the cable copper conductor in a salt spray environment.

A temperature independent, low switching energy nonvolatile switching device capable of high-temperature static storage is described. The device is useful as deep nanoscale structures such as nanowires and nanosheets. The device body, sandwiched between conducting electrodes and having a surface not covered by the conducting electrodes, is fabricated using carbon-doped transition metal oxides or carbon-doped post transition metal oxides, with a neutral, non-switching, surface passivation protective oxide covering at least a portion of the surface, whereby, quantum-based metal-insulator phase transitions are produced. Transverse and longitudinal configurations have enhanced switching endurance with low fatigue. Memory arrays using these switchable resistance devices are described.

The invention discloses a preparation method of a metal protective coating capable of resisting a marine high-temperature corrosion environment, which comprises the following steps: doping 1-10% by mass of M2AX phase in the metal protective coating, and modifying the surface of the metal protective coating by femtosecond laser to obtain a surface modified layer with the thickness of about 15-20 microns, the surface roughness of less than 1 micron and the thickness of less than 10 microns. And surface transition metal elements are periodically and uniformly distributed. The components of the coating are regulated and controlled by doping the transition metal element oxide, and the high-temperature thermal stability of the coating is improved; then micro-melting polishing of the surface of the coating and cross-scale space ordered distribution of transition metal element oxides are realized through a femtosecond laser controllable heat accumulation effect, a corrosive medium can be preferentially adsorbed, and rapid formation and stable growth of a protective oxide film of the coating in a marine high-temperature corrosive environment are promoted; further, the coating with high stability, long service life and marine high-temperature corrosion environment resistance is obtained.

A producing method of a handle wafer for a bonded wafer produced by bonding an active wafer and the handle wafer through an insulation film includes: preparing a handle wafer body made from a monocrystalline silicon wafer; forming an oxide film on the handle wafer body; depositing a polycrystalline silicon layer on the oxide film; forming a protective oxide film on a surface of the polycrystalline silicon layer; and polishing to remove the protective oxide film and polishing the polycrystalline silicon layer.

The present disclosure relates to LDMOS with enhanced safe operating area and methods of manufacturing the same. An integrated circuit, comprising: an n-type drift region; a gate structure directly on a first portion of the n-type drift region; a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure separated by a length of the drift region; a resistive protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure; a field plate contact providing a direct electrical connection to the resistive protective oxide.

In some embodiments, a coating applied to steel reinforcement bar (e.g., steel rebar) that could considerably extend the lifetime of concrete structures by reducing steel rebar corrosion is disclosed. The coating includes a thin, passivating steel (e.g., stainless steel) layer that is applied to the outside of conventional steel rebar. The coating can be applied in-line through metal cold spray manufacturing, which is a high throughput coating technique that can be integrated into existing steel manufacturing plants. Furthermore, a novel, high performance ferritic steel with tailored resistance to corrosion from chlorides is described. The new ferritic steel is distinct from other commercial and experimental steels, and is better suited for coating low-cost steel structures like rebar. Multiple alloying elements including Cr, Al, and Si will each form protective oxides independently, increasing the total amount of protection and extending it over much wider ranges of pH and electrical potential.