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99 results about "Internal diffusion" patented technology

Method for preparing mesoporous MCM-22 silicon aluminum molecular sieve

The invention discloses a method for preparing a mesoporous MCM-22 silicon aluminum molecular sieve, which comprises the following steps: uniformly mixing the MCM-22 molecular sieve synthesized by a conventional hydrothermal method, an organic amine and 0.1M NaOH solution, filling in an enclosed reaction vessel, reacting under the self-generated pressure of 170 DEG for 1-24 hours, cooling the products, filtering, washing, drying, roasting at the temperature of 550 DEG C for 6 hours, exchanging by NH4Cl, roasting at the temperature of 550 DEG C for 6 hours again to obtain the mesoporous MCM-22 silicon aluminum molecular sieve. According to the invention, the intragranular mesoporous is introduced in the MCM-22 structure, thereby an intrastratal decacyclic sine pore and an inner part of an interlayer supercage are communicated, and the internal diffusion limitation can be improved. According to the invention, during the process of melt silicon by alkali treatment, an organic amine stable skeleton is employed, and the crystallization degree of the molecular sieve can be better maintained when the mesoporous can be prepared. The molecular sieve of the present invention is used for macro-molecule reaction, such as an alkylation reaction of benzene and isopropanol, compared with conventional MCM-22, the catalytic activity and the selectivity can be greatly enhanced, and the deactivation rate can be obviously slowed.
Owner:EAST CHINA NORMAL UNIV

Multi-diffusion manufacturing method for polycrystalline silicon wafer

ActiveCN102544238ASolve the problem that the front and back colors are not easy to distinguishFinal product manufactureDiffusion/dopingDiffusionSurface layer
The invention discloses a multi-diffusion manufacturing method for a PN junction manufactured of a polycrystalline wafer. The multi-diffusion manufacturing method comprises the following steps of: S1, depositing, by constant source diffusion, an impurity source of certain concentration on the surface layer on which a P layer is required to be formed; S2, heating finite source diffusion to perform internal diffusion on a deposited impurity source phase polycrystalline wafer to control junction depth of the PN junction and gradient distribution of an impurity source; S3, depositing, by the constant source diffusion, the impurity source of the certain concentration on the surface layer of the P layer of the polycrystalline wafer again; S4, increasing, by oxygenation constant source diffusion, flux of oxygen under the conditions of unchanged temperature and a continuous flux source, wherein the step aims to increase the surface color of the P layer of the polycrystalline wafer, so that a front face and a back face of the polycrystalline wafer are differentiated during subsequent operation, and the hydrophilicity of the P layer can also be improved by increase in oxygen flux, so that an over large etching edge is reduced; and S5, repeating the step S2 to the step S4. Through the steps, the aim of solving the problem of difficulty in differentiating the colors of the front face and the back face existing after manufacturing of the PN junction of the polycrystalline wafer can be fulfilled.
Owner:YINGLI ENERGY CHINA

Diester-based fat chain organosilane quaternary ammonium salt compound and preparation method and application thereof

The invention relates to a diester-based fat chain organosilane quaternary ammonium salt compound and a preparation method and application thereof. The structural formula of the compound can be found in description, wherein m is an arbitrary integer from 2 to 9, n is an arbitrary integer from 1 to 19, and X is Cl, Br or I. The preparation method includes the steps that N-methyldiethanolamine and fatty acid are subjected to a reaction for 1-24 hours at the temperature of 100-200 DEG C, a dichloromethane solution is added, washing, drying and column chromatography are conducted, and a diester-based fat chain midbody is obtained; then the diester-based fat chain midbody and halogen alkyl trimethoxy silane react for 1-24 hours at the temperature of 80-150 DEG C, cooling and washing are conducted, and the diester-based fat chain organosilane quaternary ammonium salt compound is obtained. The organosilane quaternary ammonium salt compound is applied to preparation of a ZSM-5 zeolite molecular sieve containing mesoporous. By the application of the quaternary ammonium salt compound, the pore volume and specific area of the ZSM-5 zeolite molecular sieve containing mesoporous are remarkably raised, and internal diffusion limit is improved; a specific template agent stabilizing framework is adopted so that the obtained molecular sieve can be applicable to a macromolecules reaction.
Owner:DONGHUA UNIV

Anti-glare sheet for liquid crystal display device

To provide an anti-glare sheet for a liquid crystal display device with excellent vivid complexion and blackness and excellent image crispness, that is suitable for combination of dynamic images and still images.
An anti-glare sheet for a liquid crystal display device having a diffusion factor in the interior on at least one side of a transparent base material and provided with a functional layer with an irregular surface on the side opposite the transparent base material side, and either having or not having a transparent resin layer with a film thickness of 1.0 μm or greater on the side of the functional layer opposite the transparent base material side, the anti-glare sheet for a liquid crystal display device satisfying the following inequalities (1), (2), (3) and (4), where Q is the intensity of regular transmission, U is the transmission intensity determined by extrapolating a straight line connecting the transmission intensities at regular transmission ±2 degree and regular transmission ±1 degree, to regular transmission, when visible light rays have been irradiated on the anti-glare sheet for a liquid crystal display device, T (μm) is the sum of the thicknesses of the layer having a diffusion factor in the interior and the transparent resin layer, Ha (%) is the haze of the anti-glare sheet for a liquid crystal display device, and Hi (%) is the haze produced by internal diffusion factors.
2.15<Q/U<24.18  (1)
0.2%<Ha−Hi<13.7%  (2)
1.3%≦Hi<35.0%  (3)
2.3 μm<T<12.4 μm  (4)
Owner:DAI NIPPON PRINTING CO LTD

Pt-load catalyst taking mesoporous carbon as carrier, as well as preparation method and usage thereof

The invention relates to a Pt-load catalyst taking mesoporous carbon as a carrier, which is characterized in that the mesoporous carbon is pretreated before Pt is loaded; the pretreatment method comprises one in the following steps of: (1) adding the mesoporous carbon into a 10-30% hydrogen dioxide solution, soaking for 1-24hours, washing and removing hydrogen peroxide; (2) adding the mesoporous carbon into a 1-6M hydrochloric acid or nitric acid solution, soaking for 1-24hours, washing and removing hydrochloric acid or nitric acid; and (3) adding the mesoporous carbon into a 1-6M sodium hydroxide solution, soaking for 1-24hours, washing and removing alkali, wherein the load quantity of Pt is 0.5-5%. The invention also relates to the application of the Pt-load catalyst in preparation of 2, 2'-dichloro hydroazobenzene (DHB) from ortho-nitrochlorobenzene through hydrogenation. The catalyst uses the mesoporous carbon as the carrier, so that the internal diffusion resistance can be better reduced, and the reaction speed is accelerated. The Pt-load catalyst is high in reaction activity and selectivity, and can be repeatedly used for more than eight times, so that the using cost of the catalyst is lowered.
Owner:CHANGZHOU UNIV +1

Method for preparing silicon-aluminum-phosphorus molecular sieve from montmorillonite, product obtained by method and application thereof

The invention relates to a method for preparing a silicon-aluminum-phosphorus molecular sieve from montmorillonite, a molecular sieve product obtained by the method and application thereof. The method comprises the following steps of: activating the montmorillonite with alkaline solution; mixing the activated montmorillonite, an aluminum source, a phosphorus source, a template and de-ionized water; and performing hydrothermal crystallization reaction on the mixture, wherein the product after the crystallization comprises a small-sized silicon-aluminum-phosphorus molecular sieve grown on a laminar structure and free silicon-aluminum-phosphorus molecular sieve. The silicon-aluminum-phosphorus molecular sieve prepared from the montmorillonite serving as a raw material is partially the small-sized silicon-aluminum-phosphorus molecular sieve grown on the laminar structure, so the influence of internal diffusion of reactant molecules and product molecules can be effectively reduced; and the silicon-aluminum-phosphorus molecular sieve is partially the free silicon-aluminum-phosphorus molecular sieve. An active skeletal silicon source formed by activating the montmorillonite with the alkaline solution contributes to forming a small-grain silicon-aluminum-phosphorus molecular sieve on the surface of the montmorillonite laminar structure and diffusing the reactant molecules and the product molecules; and the montmorillonite is widely distributed in China and has low cost, so the cost for synthesizing the silicon-aluminum-phosphorus molecular sieve is reduced.
Owner:CHNA ENERGY INVESTMENT CORP LTD +2

Method for preparing protective coating suitable for blade with high Mo content and complex inner cavity structure

The invention discloses a method for preparing a protective coating suitable for a blade with the high Mo content and a complex inner cavity structure and belongs to the technical field of high-temperature alloy coatings and preparation thereof. The preparation method comprises the steps of fluorinion cleaning of an inner cavity of the blade and preparation of a gas phase alumetizing silicon coating. The purpose of fluorinion cleaning of the inner cavity of the blade is to remove a residual oxide layer on the wall of the inner cavity so as to provide conditions for subsequent preparation of the gas phase alumetizing silicon coating. The surface layer of the gas phase alumetizing silicon coating is an aluminum-silicon coating. Discontinuous MoSi2 phases are formed below the aluminum-silicon coating through internal diffusion of silicon atoms and chemical combination of molybdenum elements in alloy. The formed MoSi2 layer consumes the molybdenum elements close to the surface layer, can also restrain continuous external diffusion of the molybdenum elements in the alloy and has the functions of a diffusion preventing layer. The situation that the molybdenum elements externally diffuse to the coating surface to form MoO3 gas phase oxides, so that the integrity of an oxide film is damaged is avoided; and accordingly the aluminum-silicon diffusion coating is especially suitable for high-temperature alloy components with the complex inner cavity structures and the high Mo content.
Owner:BEIHANG UNIV
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