Quantum dot solid film and method for preparing quantum dot solid film and QLED device

A technology of quantum dots and solid films, which is applied in the field of quantum dot film preparation, can solve the problems of blank electrical devices of N-type quantum dot solid films, achieve high fluorescence intensity, increase fluorescence intensity, and change electrical properties.

Inactive Publication Date: 2019-02-05
TCL CORPORATION
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  • Abstract
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  • Claims
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Problems solved by technology

[0003] The purpose of the present invention is to provide a quantum dot solid film and its preparation method, aiming to solve the problem that there is a

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  • Quantum dot solid film and method for preparing quantum dot solid film and QLED device

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Example Embodiment

[0033] The embodiment of the present invention provides a method for preparing a quantum dot solid film. The quantum dot solid film is an N-type quantum dot solid film. The preparation method includes the following steps:

[0034] S01. Provide a P-type quantum dot solid film;

[0035] S02. After immersing the P-type quantum dot solid film in a quaternary ammonium halide solution for ligand exchange on the quantum dot surface, drying and cleaning the N-type quantum dot solid film are obtained.

[0036] Specifically, in the above step S01, the P-type quantum dot solid film can be prepared by the following method:

[0037] Providing quantum dots, and the surface ligands of the quantum dots are oil-phase ligands;

[0038] The quantum dots are configured into a quantum dot solution, deposited on a substrate and then dried to obtain a P-type quantum dot solid film.

[0039] Wherein, the quantum dots are quantum dots containing oil phase ligands on the surface, including binary phase quantum do...

Example Embodiment

[0082] Example 1

[0083] A preparation method of NPN type quantum dot solid film includes the following steps:

[0084] Step 1. Provide oil-soluble CdSe quantum dots, and the preparation method of the oil-soluble CdSe quantum dots is as follows:

[0085] Cadmium oleate Cd(OA) 2 Precursor preparation: Add 2mmol of cadmium oxide, 3ml of oleic acid, and 10ml of octadecene into a three-necked flask, vacuum at room temperature for 30mins, heat to 180℃ for 60mins after argon exhaust, maintain 180℃ for 30mins, cool to room temperature .

[0086] Preparation of selenium (Se) precursor: weigh 4mmol of Se into 4ml of trioctylphosphorus oxide, heat to 170°C for 30min, and then lower the temperature to 140°C.

[0087] Preparation of CdSe quantum dots: heat the cadmium oleate precursor to 280°C, and then extract 2ml of the selenium precursor and quickly heat and inject it into the cadmium oleate precursor to react for 2 minutes. Use a cold water bath to quickly cool the mixture. Use methanol, Tol...

Example Embodiment

[0094] Example 2

[0095] A preparation method of NPN type quantum dot solid film includes the following steps:

[0096] Step 1. Preparation of CdTe quantum dots

[0097] Prepare Cd 2+ CdCl with a concentration of 0.1mol / L 2 Aqueous solution, an aqueous solution of 3-mercaptopropionic acid with a concentration of 0.2mol / L, ready for use;

[0098] Newly prepared NaHTe solution: NaBH with a molar ratio of 4.5:1 4 Dissolve Te powder in ultrapure water and react at room temperature for 5 hours to obtain NaHTe solution;

[0099] Preparation of CdTe: Take 5mL CdCl 2 The solution, the volume of 4.5mL 3-mercaptopropionic acid solution was fixed to 30mL to make mixed solution A, transferred to a 50mL three-necked flask, adjusted the pH to 10.5 with NaOH solution, and argon was blown into the three-necked flask to remove oxygen for 1h, and freshly prepared NaHTe solution was added 100μL, stored at 4°C for 17 hours. Add 60mL of absolute ethanol, centrifuge at 10000r / min for 15min, repeat the cen...

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Abstract

The invention provides a method for preparing a quantum dot solid film, wherein the quantum dot solid film is an N-type quantum dot solid film. The preparation method comprises the steps of providinga P-type quantum dot solid film; immersing the P-type quantum dot solid film in a halogenated hyamine solution to perform quantum dot surface ligand exchange, and then drying and washing to obtain theN-type quantum dot solid film.

Description

technical field [0001] The invention belongs to the technical field of quantum dot film preparation, and in particular relates to a quantum dot solid film, a preparation method thereof, and a QLED device. Background technique [0002] Colloidal quantum dots have good application prospects in the fields of photovoltaics, diodes, and detection due to their low cost, simple processing methods, and bandgap changes with size. When colloidal quantum dots are applied in photovoltaics, diodes, detection and other fields, the preparation of quantum dot films will be involved, and the preparation method and surface treatment of quantum dot solid films have a great influence on the performance of corresponding devices. Generally, the passivation method of quantum dot nanocrystals is to use long-chain hydrocarbon ligands to prepare solid films by solution method, and then use shorter ligands to replace longer ligands, so that the nanoparticles are tightly bonded to each other. Relying ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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