95results about How to "Achieve self-alignment" patented technology

The invention relates to a method for manufacturing a semiconductor device and a method for manufacturing an SiGe HBT (Heterojunction Bipolar Transistor), wherein the method for manufacturing the SiGe HBT comprises the steps of: offering a substrate comprising an HBT collector region; sequentially forming a gate dielectric layer, a polysilicon gate layer, an oxide layer and a barrier layer on the HBT collector region; removing partial barrier layer as well as the oxide layer, the polysilicon gate layer and the gate dielectric layer under the partial barrier layer on the HBT collector region so as to form a groove where the upper surface of the HBT collector region is exposed; forming an SiGe layer in the groove to serve as a base region; forming a polysilicon emitter region on the base region; and removing the partial barrier layer and the oxide layer under the partial barrier layer on two ends of the HBT collector region till the upper surface of partial polysilicon gate layer on the two ends of the HBT collector region is exposed and preserving the barrier layer surrounding the polysilicon emitter region and the oxide layer under the barrier layer. In the invention, the manufacturing processes of the two kinds of transistors are compatible and the cost is saved; the source/drain region of a CMOS (Complementary Metal Oxide Semiconductors) transistor is raised; and therefore, the self alignment of the base region and the emitter region of the SiGe HBT is realized.

The invention discloses a double-wafer integrated-form silicon-based ultrathin micro-hemispherical resonator gyroscope. The double-wafer integrated-form silicon-based ultrathin micro-hemispherical resonator gyroscope comprises a first silicon wafer, a second silicon wafer, a micro-hemisphere casing, driving electrodes and detecting electrodes. The micro-hemispherical casing is arranged between the first silicon wafer and the second silicon wafer. The casing bottom of the micro-hemispherical casing is fixedly connected with the second silicon wafer, and the upper edge of the micro-hemispherical casing is in contacted with the lower surface of the first silicon wafer. The driving electrodes are arranged on the periphery of the micro-hemispherical casing and between the first silicon wafer and the second silicon wafer. One ends of the driving electrodes are fixedly connected with the second silicon wafer, and the other ends of the driving electrodes are movably connected with the first silicon wafer. One ends of the detecting electrodes are fixedly connected with the first silicon wafer, and the other ends of the detecting electrodes are movably connected with the inner wall of the micro-hemispherical casing. The double-wafer integrated-form silicon-based ultrathin micro-hemispherical resonator gyroscope has the advantages of small volume, light weight, low cost, high reliability, low power consumption, mass production and the like, is expected to be widely used in the fields of aerospace, automobile, medical treatment, photography, electronics consumption and the like, and has very broad application prospects.

The invention discloses an AlGaN/GaN high-electron-mobility transistor and a manufacturing method thereof, which relate to the technical field of microelectronics and mainly solve the problems of low working frequency and poor anti-irradiation performance of the transistor. The transistor sequentially comprises a GaN buffer layer, an intrinsic GaN layer, an Al0.3Ga0.7N layer, a GaN capping layer, a source electrode, a drain electrode and a grid electrode according to a growth sequence, wherein transparent ZnO is adopted by the grid electrode, an Ni metal bonding layer is evaporated below the ZnO grid electrode, and SiN protection layers are arranged at both sides. Al2O3 is doped in the ZnO grid electrode, and the length of the ZnO grid electrode is equal to the distance between the source electrode and the drain electrode. The manufacturing process of the transistor sequentially comprises the following steps of: firstly, growing an epitaxial material; then manufacturing the ZnO grid electrode; and finally, manufacturing the source electrode and the drain electrode at both sides of the ZnO grid electrode by utilizing a self-aligning method. The AlGaN/GaN high-electron-mobility transistor has the advantages of high frequency characteristic and good anti-irradiation characteristic and can be used as an electronic component in high-frequency and high-speed circuits.

The invention discloses a high-gain and ultrahigh-frequency GaN device and a fabrication method thereof. By the high-gain and ultrahigh-frequency GaN device, the problem of low frequency, gain and power conversion efficiency of an existing similar device is mainly solved. The device comprises a substrate (1), an AlN nucleating layer (2), a GaN buffer layer (3), an AlN insertion layer (4), an AlGaN barrier layer (5) and a passivation layer (7) from bottom to top, wherein a source electrode (8) and a drain electrode (9) are arranged at two ends of the GaN buffer layer, a metal interconnection layer (11) is arranged on the source electrode and the drain electrode, a self-alignment stepped dual-T-shaped electrode (10) is arranged on the AlGaN barrier layer, a groove is formed in a grid pin (101) of the grid electrode, a grid dielectric layer (6) is arranged above the groove, and the passivation layer is arranged on a surface of the barrier layer at two sides of the grid electrode pin. By the high-gain and ultrahigh-frequency GaN device, the grid electric leakage and the parasitic capacitance are reduced, the current collapse is suppressed, the power conversion efficiency and the frequency and gain characteristic of the device are improved, and the high-gain and ultrahigh-frequency GaN device can be used as a high-gain and ultrahigh-frequency device.

The invention relates to a preparation method of a thermosensitive-film infrared detector. The method comprises the following steps: depositing successively a sacrificial layer, a thermal-sensitive layer and a protective layer on a readout circuit of an infrared detector, wherein a material of the thermal-sensitive layer is vanadium oxide and the material of the protective layer is silicon nitride; simultaneously, imaging the protective layer and the thermal-sensitive layer; depositing a dielectric layer; etching a via and a contact, wherein the via etching ends at an electrode of the readoutcircuit and the contact etching ends at the thermal-sensitive layer surface; depositing a metal electrode layer and imaging the metal electrode layer; carrying out structure release of the sacrificial layer. In the method of the invention, the silicon nitride layer or SiO2 is added to be used as a protective layer of a vanadium oxide thermal-sensitive layer so that the vanadium oxide film, which is the thermal-sensitive layer, can be prevented from generating changes of a thermal property and an electrical property and influence on the detector performance can be reduced. Simultaneously, by using a high selection ratio of the silicon nitride etching to the vanadium oxide etching, the contact and the via can be used to complete the imaging of hole graphics through one lithographic plate.

The invention discloses a method for manufacturing a selective emitter battery. The method comprises the following steps of: providing a semiconductor substrate; flocking on the semiconductor substrate; performing diffusion and doping on the semiconductor substrate and forming a diffusion layer on the front face of the semiconductor substrate, wherein the diffusion layer comprises a high-doping-concentration layer on a surface layer and a low-doping-concentration layer on an inner layer; trimming the diffused semiconductor substrate; forming a silver paste electrode which corresponds to a grid line on the surface of the diffusion layer and forming a back electrode and a back electric field at the bottom of the semiconductor substrate; plating a conductive metal on the surface of the silver paste electrode; etching and removing the high-doping-concentration layer exposed on the front face of the semiconductor substrate by taking the conductive metal as a mask; depositing an anti-reflective film on the front face of the semiconductor substrate; and removing the anti-reflective film on the top surface of a part to be subjected to electrode welding of the conductive metal. In the method, the conductive metal is plated on the silver paste electrode and is taken as the mask for removing the high-doping-concentration layer, so that the requirement for the equipment accuracy is lowered and the production yield of an SE (Spray Etching) battery is increased.

The invention provides a preparation method of an array substrate, the array substrate and a display device. According to the preparation method, exposure of a black matrix material is achieved by lightening a luminous area on the substrate, and thus the exposed black matrix material is developed to obtain a black matrix. The black matrix material at a corresponding position is exposed by adopting its luminous area, self alignment is achieved, the alignment deviation problem between the black matrix and the luminous area is avoided, and accordingly the emergent light utilization rate is improved. In addition, the made black matrix can replace a circular polarizer to reduce the reflection rate of a display panel, and accordingly the flexibility of the display panel is ensured. Furthermore, the preparation method also gets rid of the limitations of an existing process evaporation mask, and the product resolution can be thus improved.

A tin-rich gold-tin solder is disclosed which is particularly advantageous for self-aligning applications. When utilized with gold-plated bond locations, the out-diffusion of tin from the solder during heating functions to shift the composition of the remaining solder closer to the eutectic value, thus preserving the liquid state of the solder and improving its reflow quality with respect to conventional eutectic solders.

The invention belongs to alignment methods and in particular relates to a quick dynamic alignment method. The quick dynamic alignment method comprises the following steps: 1, coarsely aligning, namely 1.1, inputting information, 1.2, calculating ax, ay and az, 1.3, calculating omega x and omega z, 1.4, calculating according to a formula (1), 1.5, calculating according to a formula (2), and 1.6, calculating according to a formula (3); 2, carrying out navigation calculation; 3, calculating an intermediate variable; and 4, aligning. The quick dynamic alignment method has the beneficial effects of being capable of accurately estimating three misalignment angles of a platform system relative to a geographical system and three uncompensated platform drifts (of the platform system) under angular vibration of a carrier so as to achieve the purpose of high-precision self-alignment.

The invention relates to a self-aligning sintering clamp and method for a semiconductor laser chip. The clamp comprises a pedestal, a guide rail support, and a press block. The pedestal is provided with a positioning card slot matched with a heat sink. Two sides of the press block are provided with symmetric positioning racks. The guide rail support is vertically disposed on the pedestal, and is provided with symmetric suspension arms. The interior of each suspension arm is provided with a positioning guide rail. The positioning racks of the press block can be sleeved by the positioning guide rails, and move up and down in the positioning guide rails. The bottom end of the press block is provided with a press column. When the press block moves downwards, the press column compresses a chip on the heat sink. The invention also provides the method for sintering the semiconductor laser chip through the above clamp. The clamp is simple in structure, is low in cost, can achieve the self-aligning, and is convenient for operation and observation. The method can achieve the quick batch sintering of the semiconductor laser chips and heat sinks, and remarkably improves the sintering yield of the clamp.

The invention relates to a self-alignment chip or a chip structure, which comprises a substrate, at least a first recess, at least a second recess, at least a connecting structure and at least a lug. The substrate comprises a first surface and a second surface, and at least a pad is formed on the first surface. The first recess is positioned on the first surface, and the first recess is electrically connected with the pad. The second recess is arranged on the second surface. The connecting structure penetrates the substrate and is positioned between the first recess and the second recess, and the connecting structure is electrically connected with the first recess and the second recess. The lug can be filled in the second recess, and extend from the second surface.

The invention provides a double-chip flip chip structure by taking a flip chip structure as a starting point. The double-chip flip chip structure is characterized in that a substrate with a central partition plate is provided with two chip slots in certain gradients, and a plurality of semispherical grooves are formed at contact positions of the slot slopes and chip conducting projections; each chip is provided with a plurality of cylindrical conducting projections with semispherical tops; an upper cooling fin is fastened to the top of the substrate. The double-chip flip chip structure has the advantages of realization of self-alignment chip bonding, realization of integral packaging of double chips, high integration level, reduction of chip packaging area and improvement of a heat radiation function.

The invention provides a TSV (through silicon via) back side hole leaking technology without CMP (chemical mechanical grinding) technology. The TSV back side hole leaking technology comprises the following steps of S1, providing a device wafer which completes a front side technology, wherein the device wafer comprises a substrate and a TSV (through silicon via) blind hole, and the TVS blind hole is formed in the substrate; S2, providing a carrier wafer, and bonding the front side of the device wafer and the carrier wafer by a temporary bonding technology, so as to obtain a temporary bonding body; S3, mechanically grinding the back side of the substrate of the device wafer, and thinning; S4, etching the back side of the substrate, and enabling the TSV blind hole to expose out of the back side of the substrate; S5, coating a back side medium layer at the back side of the substrate of the device wafer, and completely covering the exposing part of the TSV blind hole in the step S4; S6, utilizing a mechanical grinding technology to process the back side medium layer, and enabling the TSV blind hole to expose out of the back side medium layer. The TSV back side hole leaking technology has the advantages that the CMP process in the TSV back side end exposing process is avoided, the technological cost is greatly reduced, the output efficiency is obviously improved, and the self-aligning effect of the back side medium layer hole via is realized.

The invention relates to a normally closed surface grid-type static induction transistor (SIT) of low power and a manufacturing method. The transistor is formed by parallelly connecting a drain electrode, a substrate of N+ low resistance monocrystal located on the drain electrode, an N- high resistance epitaxial layer located on the substrate of N+ low resistance monocrystal and multiple mutually parallelly-connected SIT units located in the N- high resistance epitaxial layer, wherein the active region uses the short channel design. The transistor is capable of enabling the impurity concentration of the device grid body to be high and enabling the impurity distribution to be more uniform under the corresponding technology support, reducing the own voltage drop of the grid body, increasing the sensitivity of the grid control, improving the device transconductance, reducing the grid source area, reducing the stray capacitance of the grid source, and increasing the SIT working frequency. Compared with the prior art, the short channel design is completely improved revolutionarily.

The invention provides a groove-type MOS (Metal-Oxide-Semiconductor) device and a manufacturing method thereof. The groove-type MOS device at least includes a first conductive heavily doped substrate,a first conductive lightly doped epitaxial layer on the first conductive heavily doped substrate, a plurality of first conductive source regions, a plurality of grooves, a gate oxide layer and a polysilicon gate which are formed in the each groove, a second conductive lightly doped body region formed on the upper portion of the first conductive lightly doped epitaxial layer, a cellular region contact hole formed in the second conductive lightly doped body region, an insulating dielectric block covering the polysilicon gate in the groove of the cellular region, a second conductive heavily doped body contact region formed between two adjacent first conductive source regions of the cellular region, and a metal source electrode formed in the contact hole of the cellular region, wherein the plurality of first conductive source regions and the plurality of grooves are formed on the upper portion of the first conductive lightly doped epitaxial layer at intervals. The groove-type MOS device can guarantee stability of the device while improving the device density and reducing the conduction resistance.

The invention discloses a method for manufacturing a fin field effect transistor (FET). Polycrystalline silicon layers are deposited on two fin structures of the FinFET twice, a height difference is correspondingly formed above the two fin structures, polycrystalline silicon is etched back by means of the height difference, a gate of one fin structure is divided to form two gates for further formation of a 4T-FinFET, the 4T-FinFET and a 3T-FinFET can be integrated to be manufactured, etching precision can be accurately controlled, damage to a device structure is avoided, and self-alignment is achieved during manufacturing.

The invention relates to a micro type optics apparatus and the preparing process thereof, which is characterized in that: the apparatus includes fixed electrode, moveable electrode, supporting beam, glass substrate, light reflecting module and fiber fixed module; the fixed electrode includes the comb type fixed electrode connected to the double sides of the top surface of the glass substrate and the flat type fixed electrode fixed to the middle part of the glass substrate top surface; the moveable electrodes are two comb type moveable electrodes inserted equipped between the comb type fixed electrodes and two flat type movable electrodes equipped above the flat type fixed electrode; the supporting beam includes folding beam and combined torsion beam, the light reflecting module is the center above the fiber fixed module which is equipped with several fiber grooves in radiation type, and every fiber groove is separately focused to one of many light reflecting surfaces above the light reflecting module. The invention is easy to prepare, and is compatible with many kinds of types of MEMS components processes, which can be used for realizing more powerful micro optical integrated system.