6results about How to "Achieve self-alignment" patented technology

The invention provides a preparation method of an inverted stacked transistor, a transistor, a device and equipment, and the method comprises the steps: forming an active structure on a substrate, the active structure is provided with a first part and a second part, and the first part is closer to the substrate than the second part; the active structure in the source-drain region is etched, the first source-drain region is filled with an insulating material to form a filling structure, the source-drain region comprises a first source-drain region and a second source-drain region, the first source-drain region corresponds to the first part, and the second source-drain region corresponds to the second part; forming a first source-drain structure and first source-drain metal of the first transistor based on the second source-drain region; reversing the first transistor and removing the substrate; selectively etching the filling structure through the material so as to expose the first source-drain region; and forming a second source-drain structure and second source-drain metal of the second transistor based on the first source-drain region. Complete self-alignment of the front and back transistors can be realized.

The invention relates to the technical field of laser manufacturing, in particular to a manufacturing method of a laser. The manufacturing method of the laser provided by the invention comprises the following steps: providing a device substrate; comprising a target area to form a ridge-shaped structure; etching the device substrate, and forming a ridge-shaped structure in the target area; in the etching process, the ranges of the two sides of the target area of the device substrate are all etched to remove the same depth; forming a SiN protection layer, and covering the surface of the side, where the ridge-shaped structure is located, of the device substrate; forming a photoresist layer, at least filling all the space on the two sides of the ridge-shaped structure, and the height of the photoresist layer is not lower than that of the ridge-shaped structure; a first etching process: removing the SiN protection layer on the top surface of the ridge-shaped structure, and removing partial thickness of the photoresist layer on the two sides of the ridge-shaped structure at the same time; removing the residual photoresist layer; according to the invention, the problem that the two sides of the edge of the ridge-shaped waveguide of the 980nm single-mode high-power laser are easy to leak electricity can be solved.

The present invention relates to a semiconductor structure and a preparation method thereof. In the preparation method of the semiconductor structure, a first support layer covering the first structure is formed on the surface of the first structure, and a second support layer covering the first support is formed on the surface of the first support layer. After removing the first support layer and the second support layer on the upper surface of the first structure, and the first support layer between the first structure and the second support layer, the top surface of the second support layer is higher than the top surface of the first structure. Among them, the first support layer and the second support layer can provide support for the first structure during the preparation process of the semiconductor structure, ensuring that the structure retained after etching the first structure will not be distorted or tilted. Since the top surface of the second support layer is higher than the top surface of the first structure, a mask layer can be formed on the upper surface of the first structure in a horizontal direction with the second support layer as the center in the subsequent process, so as to achieve self-alignment during the etching process of the first structure and improve the preparation accuracy of the semiconductor structure.

The invention discloses a preparation method of self-aligned multiple patterning. The preparation method comprises the following steps: respectively preparing a first photoresist layer and a second photoresist layer on one side of a substrate; the photosensitivity of the first photoresist layer is different from the photosensitivity of the second photoresist layer, and performing exposure and development treatment on the first photoresist layer and the second photoresist layer so as to complete multi-patterning self-alignment on the first photoresist layer and the second photoresist layer. Therefore, after the treatment of the same exposure process and the same development condition, due to the photosensitivity difference of the first photoresist layer and the second photoresist layer, patterns with different shapes can be formed on the first photoresist layer and the second photoresist layer, and in addition, due to the same exposure position of the first photoresist layer and the second photoresist layer, the light transmittance of the first photoresist layer and the light transmittance of the second photoresist layer are improved. The position of the pattern formed by the first photoresist layer is the same as the position of the pattern formed by the second photoresist layer, so that self-alignment of multiple patterning is realized, the process and steps are simple and convenient, and the production yield and the production efficiency can be improved.

The present invention provides a three-axis air-floating platform pin-locking mechanism, including a locking hole assembly, a locking needle assembly, and a three-way adjustment structure. The upper side of the three-way adjustment structure is detachably connected to the locking needle assembly. The locking needle of the locking needle assembly and the locking hole of the locking hole assembly can be automatically aligned. The locking hole assembly is fixed to the main inertia axis position of the three-axis air-floating platform, and the center of the locking hole is aligned with the spherical center of the three-axis air-floating platform. The three-axis air-floating platform pin-locking mechanism described in the present invention uses a needle sleeve, a guide sleeve, a buckle unit, and a press shaft to form an external telescopic assembly. The external telescopic assembly and the outer shell form a sliding pair to achieve locking and unlocking; the locking needle, the needle sleeve, and the guide sleeve form an internal telescopic sliding pair, and the locking hole and the locking needle are designed to cooperate with the inverted cone surface to achieve self-alignment.

This invention relates to the field of electric motor control technology and discloses an electromechanical converter regulation system for compressor drive, comprising: a bus current gradient acquisition unit for acquiring DC bus current gradient; a switching timing calculation unit for reconstructing the switching vector execution timing within the space voltage vector modulation period; and a pulse width signal generation unit for generating switching control signals. When the DC bus current gradient exceeds a preset load mutation threshold, the switching timing calculation unit subtracts the zero vector duration to obtain the adjustment compensation time and injects the adjustment compensation time into the effective vector according to the original ratio of the effective vector. This invention achieves quasi-synchronous offsetting between converter output power and mechanical load fluctuations, compensates for current hysteresis caused by load torque pulsation, suppresses electromagnetic noise, and improves the energy efficiency and robustness of the drive system.