AlGaN/GaN high-electron-mobility transistor and manufacturing method thereof

Abstract

The invention discloses an AlGaN / GaN high-electron-mobility transistor and a manufacturing method thereof, which relate to the technical field of microelectronics and mainly solve the problems of low working frequency and poor anti-irradiation performance of the transistor. The transistor sequentially comprises a GaN buffer layer, an intrinsic GaN layer, an Al0.3Ga0.7N layer, a GaN capping layer, a source electrode, a drain electrode and a grid electrode according to a growth sequence, wherein transparent ZnO is adopted by the grid electrode, an Ni metal bonding layer is evaporated below the ZnO grid electrode, and SiN protection layers are arranged at both sides. Al2O3 is doped in the ZnO grid electrode, and the length of the ZnO grid electrode is equal to the distance between the source electrode and the drain electrode. The manufacturing process of the transistor sequentially comprises the following steps of: firstly, growing an epitaxial material; then manufacturing the ZnO grid electrode; and finally, manufacturing the source electrode and the drain electrode at both sides of the ZnO grid electrode by utilizing a self-aligning method. The AlGaN / GaN high-electron-mobility transistor has the advantages of high frequency characteristic and good anti-irradiation characteristic and can be used as an electronic component in high-frequency and high-speed circuits.

Description

technical field

[0001] The invention belongs to the field of microelectronics technology, and relates to semiconductor devices, specifically a structure and a realization method of a short-channel AlGaN / GaN high electron mobility transistor using transparent material ZnO as a gate and source-drain self-alignment technology, mainly Used as high-speed devices and high-frequency devices. Background technique

[0002] Compared with the parameters of other semiconductor materials, GaN material has obvious advantages. Its forbidden band width is the widest, its saturation electron velocity is also better than other semiconductor materials, and it has a large breakdown field strength and high thermal conductivity. The characteristics of charge carrier velocity field are the basis of device operation. High saturation velocity leads to large current and high frequency. High breakdown field strength is crucial for high-power applications of devices. At the same time, due to the inhere...

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