Method for preparing resistive random access memory

Abstract

The invention discloses a method for preparing a resistive random access memory. The method comprises the following steps: preparing a bottom electrode on a substrate; then, carrying out partial oxidation on the metal of the bottom electrode so as to form a metal oxide with a thickness of 3-50 nm, and taking the metal oxide as a resistive random material layer; and finally, preparing a top electrode on the resistive random material layer. By using the method disclosed by the invention, a step of depositing a resistive random material layer in the traditional method is avoided, thereby greatly reducing the process complexity; meanwhile, the self-alignment between the resistive random material layer and the bottom electrode can be realized; the complete isolation between devices is ensured; various parasitic effects generated by the traditional process methods are avoided; and the consistency of the actual area and design area of each device is ensured.

Description

technical field

[0001] The invention belongs to the technical field of ultra-large-scale integrated circuits, and in particular relates to a preparation method of a non-volatile resistive memory device. Background technique

[0002] With the continuous advancement of integrated circuit technology, the FLASH technology based on the traditional floating gate structure will face technical challenges that cannot be scaled down proportionally. In recent years, the resistive RAM (RRAM) based on the MIM (Metal-Insulator-Metal) structure has attracted much academic attention due to its simple structure, easy fabrication, small size, high integration, fast erasing and writing speed, and low power consumption. world and industry attention. Different from FLASH of the traditional floating gate structure, which relies on the amount of charge to store information 0 and 1, RRAM utilizes its high resistance and low resistance states under different electrical conditions to store informati...

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