Method for lowering contact resistance of two-dimensional material field effect transistor

Abstract

The invention relates to a method for lowering contact resistance of a two-dimensional material field effect transistor. The method comprises the following steps of enabling at least one transitionalmetal region to be evaporated on the partial surface of a substrate to form a transitional metal layer, wherein the transitional metal region is 0.1-2nm in thickness; performing photoetching and developing to form a photoresist layer, wherein at least two holes for evaporating source and drain electrodes are formed in the photoresist layer, the downward side of each hole is just aligned to the partial transitional metal layer and the partial substrate surface, and each hole is positioned in one side of the transitional metal region separately; enabling the source and drain electrodes to be evaporated in the holes, and next, removing the photoresist layer to expose the other part of the substrate; and adopting a sulphur source to perform sulfuration on the transitional metal, or adopting aselenium source to perform selenylation of the transitional metal, and then performing cooling to form the two-dimensional material field effect transistor on the surface of the substrate. By adoptingthe source and drain electrodes as a protection isolation layer, a two-dimensional material channel is formed between the source and drain electrodes, so that the overlapped area between the channeland the source and drain electrodes is reduced, thereby lowering the contact resistance between the two parties.

Description

technical field [0001] The invention relates to the field of two-dimensional materials, in particular to a method for reducing the contact resistance of a two-dimensional material field effect transistor. Background technique [0002] As the active channel region of field effect transistors, semiconductor two-dimensional materials can overcome the short channel effect of traditional silicon-based field effect transistors. In addition, due to the ultra-thin thickness and excellent flexibility of two-dimensional materials, the preparation of ultra-small, bendable and flexible field-effect transistors can be realized based on two-dimensional materials. In recent years, based on two-dimensional MoS 2 、WS 2 、MoSe 2 、PtS 2 , PtSe 2 Field-effect transistors of semiconducting two-dimensional materials have attracted great attention. [0003] However, the carrier mobility of currently reported 2D field-effect transistors is still much lower than the theoretical mobility of 2D m...

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Problems solved by technology

[0003] However, the carrier mobility of currently reported 2D field-effect transistors is still much lower than the theoretical mobility of 2D materials themselves. One of the reasons is that the contact resistance between 2D materials and metal electrodes greatly limits the device performance

Therefore, how to effectively reduce the contact resistance between the two-dimensional material channel and the metal electrode is the main challenge faced by the application field of two-dimensional field effect transistors.

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