2results about How to "Avoid parasitic effects" patented technology

The invention relates to a high-power microwave amplitude limiting protection circuit with high power capacity, and belongs to the field of strong electromagnetic pulse protection. The three-level PIN pair transistor amplitude limiting circuit and the eight-order hairpin type microstrip filter circuit are carried on the dielectric substrate, the first blocking capacitor is connected between the input end of the amplitude limiting protection circuit and the three-level PIN pair transistor amplitude limiting circuit, and the second blocking capacitor is connected between the three-level PIN pair transistor amplitude limiting circuit and the eight-order hairpin type microstrip filter circuit. The output end of the amplitude limiting protection circuit is connected with the eight-order hairpin type microstrip filter circuit. The invention has the advantages of large power capacity, small peak leakage, small starting limit level and low amplitude limiting level, can effectively suppress interference signals coupled into the receiving end of the wireless communication equipment by high-power microwaves, and improves the anti-interference capability of the wireless communication equipment under the radiation of the high-power microwaves.

The application relates to a full GaN power electronic monolithic integrated circuit and a preparation method thereof, which comprises, from bottom to top, an insulating composite substrate, an AlN layer, a Si layer, a GaN / AlGaN buffer layer, a GaN layer and an AlGaN layer; a 2DEG layer is formed between the GaN layer and the AlGaN layer; the AlGaN layer is etched, a p-GaN layer is grown; a p-GaN layer gate portion is etched and filled with a passivation layer, and a gate metal is grown; source metal and drain metal are respectively grown on both sides of the p-GaN layer gate area; a deep groove is arranged between a driving circuit and a low-voltage tube, between a high-voltage tube and the low-voltage tube, and a medium is filled in the deep groove; and the full GaN power electronic monolithic integrated circuit is obtained through a top via and an interconnection process. The application can realize high efficiency and low power consumption, low parasitic effect, and reduce leakage current and switching loss.