52results about How to "Avoid parasitic effects" patented technology

Described is a method and array for magnetizing a magnetizable object. The method includes the steps of (a) applying a first degaussing signal to the magnetizable object to degauss the magnetizable object and the first degaussing signal is an alternating electrical signal having a first frequency and a first amplitude; (b) applying a magnetizing signal to the degaussed magnetizable object to magnetize the magnetizable object; and (c) applying a second degaussing signal to the magnetized magnetizable object to partially degauss the magnetized magnetizable object and the second degaussing signal is an alternating electrical signal having a second frequency and a second amplitude.

The invention provides a top grid self-alignment thin-film transistor with source/drain areas raised and a manufacturing method of the top grid self-alignment thin-film transistor with the source/drain areas raised. The manufacturing method includes the steps that an oxide semiconductor active layer, a grid dielectric layer and a grid electrode are sequentially formed on glass or a flexible substrate, and the thickness of the oxide semiconductor active layer is 5-20 nanometers in order to reduce influences of short-wavelength light on off-state characteristics of the thin-film transistor; then grid dielectric is corroded with the grid electrode as a stopping layer, the active layer corresponding to the grid dielectric is made to serve as a channel region, the active layers on the two sides are a source area and a drain area respectively, and self-alignment is achieved; next, low-resistivity conductive thin films are deposited, and the raised source area and the raised drain area are formed after photoetching, stripping or corrosion. The thin channels are adopted and the source area and the drain area are raised, not only are the influences of the light on the channels reduced, but also the resistance of the source area and the resistance of the drain area are reduced, and performance of the thin-film transistor is improved.

A power semiconductor package structure includes a carrier, a first power chip, a second power chip, a first conductive sheet, a second conductive sheet and a third conductive sheet. The first power chip has a first surface and a second surface opposing to the first surface. A first control electrode and a first main power electrode are disposed on the first surface, and a second main power electrode is disposed on the second surface. The second surface is disposed on the carrier, and electrically connected to the carrier through the second main power electrode. The second power chip has a third surface and a fourth surface opposing to the third surface. A third main power electrode is disposed on the third surface, and a fourth main power electrode is disposed on the fourth surface. The fourth surface is disposed on the first power chip. The first conductive sheet is electrically connected to the first main power electrode and the fourth main power electrode. The second conductive sheet is electrically connected to the third main power electrode. The third conductive sheet is electrically connected to the first control electrode. At least a part of the first control electrode is non-covered by the second power chip along a projection direction, which is perpendicular to the carrier.

The invention discloses a cylindrical sample preparation device for measuring moisture content of green sand through a capacitance method and a method for measuring the moisture content of the green sand, belongs to the field of moisture measurement of cast green sand, and solves the problem that the measuring accuracy of the moisture content of the green sand through capacitance methods is low in the past. The method includes producing a sand sample with the height equal to a main sample drum through the sample preparation device; connecting two exciting electrode shielded wires with a parallel resistance model circuit respectively, exerting alternating current excitation voltage on two exciting electrodes through the two exciting electrode shielded wires, turning off a switch K, serially connecting a sand sample equivalent resistor Rx with a capacitor Cx, and turning on the switch K, parallelly connecting the sand sample equivalent resistor, the capacitor Cx and a first resistor R0; and measuring the voltage drop uo1 and uo2 of a second resistor R under the two states to obtain the Cx, and obtaining the moisture content of the green sand through the existing relation between capacitor Cx and the moisture content.

A monolithically integrated VCSEL and photodetector, and a method of manufacturing the same, are disclosed for applications where the VCSEL and photodetector require separate operation such as duplex serial data communications applications. A first embodiment integrates a VCSEL with an MSM photodetector on a semi-insulating substrate. A second embodiment builds layers of a p-i-n photodiode on top of layers forming a VCSEL using a standard VCSEL process. The p-i-n layers are etched away in areas where VCSELs are to be formed and left where photodetectors are to be formed. The VCSELs underlying the photodetectors are inoperable, and serve to recirculate photons which are not initially absorbed back into the photodetector. The transmit and receive pairs are packaged into a single package for interface to multifiber ferrules. The distance between the devices is precisely defined photolithographically, thereby making alignment easier. In a further alternate embodiment, a FET is coupled to the p-i-n photodiode to form an integrated detector preamplifier along with the VCSEL transmitter all on the same optical reference plane.

The invention provides an MOS (metal oxide semiconductor) transistor, which is a trench vertical double-diffusion transistor. A metallic layer for leading a source electrode out is filled in a contact hole positioned between two adjacent source regions by means of a metallic plug, and a body contact area in heavy doping is formed below the contact hole. All metals in an MOS transistor structure pass through the metal plug filled in the contact hole to contact with a silicon body, the silicon body contacted by the side walls of the contact hole is a first semiconductor type doped source region, the silicon body contacted by the bottom of the contact hole is the second semiconductor type doped body contact area, and both the areas are heavy doped areas, so that various parasitic effects generated caused by contact of the metals with a light doped silicon body are prevented effectively, and the performance of the MOS transistor is improved. Simultaneously, by the aid of the metallic plug, the bore diameter of the contact hole is greatly reduced, the dimensions of devices are further decreased, and the integration level of the devices is improved.

The invention relates to the field of phased-array antennas and especially relates to a phased-array antenna capable of realizing arbitrary polarization switching. The phased-array antenna comprises phased-array radiation units and a TR channel module. The TR channel module comprises N 2*2 TR sub-arrays, each TR sub-array comprises four radiation units, and the number of TR channels of each TR sub-array is 2*4; each phased array radiation unit comprises a patch, a feed point A and a feed point B, wherein the feed point A and the feed point B are located on the patch; and each phased array radiation unit carries out double-feed-point feeding. In the invention, one set of phased-array antenna equipment is used to realize functions of linear polarization, left-hand circular polarization, right-hand circular polarization and the like which are possessed by three sets of phased-array antenna equipment in the past so that cost and a structural size are greatly reduced, and a parasitic effectgenerated by using active devices is avoided.

The invention relates to a micro mechanical testing probe card based on electroplating process and a manufacturing method thereof, and is characterized in that, cantilevers and probe tips are manufactured and formed on a silicon wafer with electroplated metal nickel; the probe tips are manufactured on an (111) inclined surface of the silicon wafer, and each probe tip is connected with a ceramic substrate with one or two probe cantilevers; the probe cantilevers and the probe tips adopt an isostress beam structure; probes on an flip chip substrate are intensively arranged in two directions. The manufacturing is characterized in that: firstly, the upper surface of the (100) silicon wafer is taken as the electroplated working face, and the probe cantilevers of a low stress nickel layer is formed by electroplating; and then a deep groove (111) inclined surface produced by anisotropic etching is taken as the working face, and the probe tips of the low stress nickel layer is formed by electroplating, and then the probes are connected with a package substrate by a flip chip process, and finally the probe structure is released through a method of removing the corrosion of the silicon wafer.

A RF signal test and measurement system capable of measuring forward and reverse signal parameters of RF components including Electrically Small Antennas (ESA) and capable of being integrated within a communications system to aid the automatic retuning of antennas.

This disclosure relates to a method of fabrication of a surface acoustic wave device comprising the step (a) of providing a piezoelectric structure, the step (b) of providing a dielectric structure, wherein the step (b) comprises a step (b1) of metalizing the dielectric structure, and the method further comprising the step (c) of bonding the metalized dielectric structure to the piezoelectric structure.

The invention relates to the field of phased-array antennas, in particular to a phased-array antenna capable of realizing left-handed and right-handed circular polarization switching. The antenna comprises N 2 * 2 TR sub-arrays. Each TR sub-array comprises four phased-array antenna radiation units, and the number of TR channels of each TR sub-array is 1 * 4. Each phased-array antenna radiation unit comprises a patch and a feed point A located on the patch, and each phased-array antenna radiation unit is a single feed point. Only one set of phased-array antenna equipment in the scheme is used,the functions, such as left-handed and right-handed polarization switching, of two sets of phased-array antenna equipment in the past can be achieved, the cost and the structural size are greatly reduced, and the parasitic effect generated by using an active device is avoided. The antenna is mainly realized through an n-in-one multifunctional chip in combination with phased-array antenna layout.

The invention discloses a programmable nonvolatile memory unit, an array and a manufacture method thereof. The invention provides a metal layer, a contact hole, a barrier layer, a plurality of polysilicons and an underlay with an active area. The polysilicons and the underlay with the active area form a plurality of transistors including a grid, a drain and a source. The source of the transistors forms a plurality of source lines. The polysilicons form a plurality of word lines. The metal lines in the metal layer form a plurality of bit lines. The metal layer, the contact hole, the barrier layer and the active area are connected in turn to form a capacitor, wherein, the barrier layer is used as the medium layer of the capacitor; the transistors and the capacitor are correspondingly connected to form a memory unit and arranged in corresponding wordlines, bit lines and source lines. The invention greatly improves the storage stability of the memory, further reduces the memory area and is good for the application of large scale integrated circuit.

The invention discloses a high speed D trigger based on a transistor, and mainly solves the problems that an existing D trigger is high in phase noise and low in working frequency. The high speed D trigger based on the transistor mainly comprises a first latch (1), a second latch (2), a preset circuit (3), a first current source circuit (4a) and a second current source circuit (4b). The preset circuit (3) composed of a difference channel is connected with an output end of the second latch (2) and a current input end of the second latch (2). The preset circuit (3) is controlled by external signals to achieve a preset function. The first current source circuit (4a) is connected with a current input end of the first latch (1), and provides stable current for the first latch (1). The second current source circuit (4b) is connected with the current input end of the second latch (2), and provides stable current for the second latch (2). The high speed D trigger based on the transistor has the advantages of being simple in circuit, low in phase noise, high in working frequency, and the like. Accordingly, the high speed D trigger based on the transistor can be applied to a high speed program divider.

The invention discloses a photoelectric detector based on an asymmetric metamaterial structure. The photoelectric detector based on the asymmetric metamaterial structure can be composed of a metamaterial sensitive unit, and can also be composed of a plurality of metamaterial sensitive units in an array form. The metamaterial sensitive unit is composed of an asymmetric electromagnetic resonance structure and a conversion structure. During working, electromagnetic waves and the asymmetric electromagnetic resonance structure are coupled to generate a local high-intensity magnetic field, the conversion structure is arranged in the local high-intensity magnetic field, free carriers of the conversion structure deflect under the action of generated Lorentz force and have directional moving components, and then the free carriers are accumulated at the physical boundary of the conversion structure to form a direct-current potential difference; therefore, the conversion from the high-frequency electromagnetic wave (light) signal to the direct current is realized. The photoelectric detector provided by the invention has the outstanding advantages of simple structure, high detection speed, large response wave band range, low processing difficulty, low manufacturing cost and the like.