Acoustic resonator and preparation method thereof

A technology of acoustic wave resonators and through-slots, applied in the field of microelectronics, can solve problems such as frequency adjustment of clutter acoustic wave resonators, and achieve the effects of reduced area, large capacitance, and simple process

Pending Publication Date: 2021-10-22
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an acoustic wave resonator and its preparation method, which are used to solve the problem of clutter generated by excitation of horizontal and vertical electric fields and the frequency adjustment of the acoustic wave resonator in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Acoustic resonator and preparation method thereof
  • Acoustic resonator and preparation method thereof
  • Acoustic resonator and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0087] Such as figure 1 As shown, the present embodiment provides an acoustic wave resonator, and the acoustic wave resonator includes:

[0088] supporting substrate 10;

[0089] The piezoelectric layer 20 is formed on the upper surface of the support substrate 10; the piezoelectric layer 20 includes: a through groove 21, an edge support structure 22 and N effective piezoelectric structures 23, and the through groove 21 is formed on the In the piezoelectric layer 20 and the supporting substrate 10 is exposed, the edge support structure 22 is formed on the periphery of the through groove 21, and the effective piezoelectric structures 23 are arranged in parallel and spaced in the through groove 21 , and fixed to the opposite sides of the edge support structure 22 by engaging arms 24;

[0090] N bottom electrodes 30 correspond one-to-one to the N effective piezoelectric structures 23, and are formed between the effective piezoelectric structures 23 and the support substrate 10;...

Embodiment 2

[0103] Such as image 3 As shown, this embodiment also provides a preparation method of an acoustic wave resonator, the preparation method comprising:

[0104] 1) providing a supporting substrate 10;

[0105] 2) forming N bottom electrodes 30 on the upper surface of the support substrate 10, wherein the N bottom electrodes 30 are led out through the bottom electrode connection structure 40 and connected to each other;

[0106] 3) Forming a piezoelectric material layer 90 on the upper surface of the structure obtained in 2), and patterning the piezoelectric material layer 90 to form a piezoelectric layer 20, wherein the piezoelectric layer 20 includes a through groove 21, an edge support structure 22. Bonding arms 24 and N effective piezoelectric structures 23, wherein the through groove 21 is formed in the piezoelectric material layer 90 and exposes the support substrate 10, and the edge support structure 22 is formed in the On the periphery of the through-slot 21, N effecti...

Embodiment 3

[0120] Such as Figure 5 As shown, the present embodiment provides a method for preparing an acoustic wave resonator, the preparation method comprising:

[0121]1) Provide a piezoelectric substrate 20', the piezoelectric substrate 20' includes a first surface and a second surface opposite to the first surface, and the first surface of the piezoelectric substrate 20' performing patterned ion implantation to form a damaged layer 100 in the piezoelectric substrate 20';

[0122] 2) forming N bottom electrodes 30 on the first surface of the piezoelectric substrate 20', wherein the N bottom electrodes 30 are led out through the bottom electrode connection structure 40 and communicated with each other;

[0123] 3) forming a bonding layer 70 on the upper surface of the structure obtained in 2), and using the bonding layer 70 to bond the structure obtained in 2) to the support substrate 10;

[0124] 4) Peel off and polish the structure obtained in 3) based on the second surface to re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an acoustic resonator and a preparation method thereof. The acoustic resonator comprises a supporting substrate; a piezoelectric layer is formed on the upper surface of the supporting substrate, and the piezoelectric layer comprises a through groove, an edge supporting structure, a joint arm and N effective piezoelectric structures; N bottom electrodes are formed between the N effective piezoelectric structures and the supporting substrate and are communicated with one another through bottom electrode communication structures; N top electrodes are formed on the upper surfaces of the N effective piezoelectric structures and are led out one by one through the N top electrode leading-out structures. N is a positive integer greater than or equal to 2. According to the acoustic resonator and the preparation method thereof provided by the invention, the problem that clutters are generated by excitation of transverse and longitudinal electric fields and the problem of frequency adjustment of the acoustic resonator in the prior art are solved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to an acoustic wave resonator and a preparation method thereof. Background technique [0002] With the development of wireless communication technology, electronic technology is moving towards 5G and developing in the direction of smaller, lighter and thinner. Piezoelectric radio frequency (RF) microelectromechanical system (MEMS) resonators have been used as the front end of radio frequency systems to achieve frequency selection and interference suppression functions. Its working principle is to use piezoelectric films to convert mechanical energy and electrical energy. [0003] The modern communication industry has higher and higher requirements for signal quality and the competition for communication spectrum resources is also intensifying. Low loss, wide bandwidth, tunability, and temperature stability have become common pursuit goals in the communication i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H9/02H03H9/05H03H9/13H03H3/02
CPCH03H9/171H03H9/0504H03H9/02015H03H9/02118H03H9/13H03H3/02H03H2003/023
Inventor 欧欣吴进波张师斌周鸿燕郑鹏程
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap