Top grid self-alignment thin-film transistor with source/drain areas raised and manufacturing method thereof
A technology of thin film transistor and manufacturing method, which is applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices and other directions, can solve the problems of increasing off-state current of devices, increasing energy consumption, affecting channel devices, etc., and reducing off-state current. effect, avoid the increase of energy consumption, improve the effect of off-state characteristics
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0042] Example one:
[0043] The cross-sectional view of the thin film transistor made in this embodiment is as Picture 11 As shown, the thin film transistor is fabricated on a glass substrate 1 and includes an active layer 2, a gate dielectric layer 3, a gate electrode 4, a raised source region 7 and a drain region 8. Among them, the active layer region corresponding to the gate is the channel region, the left and right sides of the channel region are the source region and the drain region, and the elevated parts of the source region and the drain region are above the active layer and are located in the gate dielectric. The left and right sides of the layer. The active layer 2 is located on the glass substrate 1. The active layer includes the channel region corresponding to the gate electrode and the source and drain regions on both sides of the channel region; the gate dielectric layer 3 is located on the active layer 2; the gate electrode 4 is located on the gate dielectric ...
Example Embodiment
[0056] Embodiment two:
[0057] The cross-sectional view of the thin film transistor made in this embodiment is as follows Picture 11 As shown, it is the same as in the first embodiment, as described above.
[0058] The specific examples of the manufacturing process of the thin film transistor in this embodiment are as follows figure 1 — Figure 4 with Picture 8 — Figure 13 Shown. figure 1 — Figure 4 and Picture 12 — Figure 13 The manufacturing method of the method has been detailed in the first embodiment. In this embodiment Picture 8 — Picture 11 The manufacturing process shown is different from that in the first embodiment, which will be described in detail below:
[0059] Such as Picture 8 As shown, a layer of positive photoresist is coated on the surface, and the opaque gate is used as a mask to expose from the back of the glass substrate ( Picture 8 The direction indicated by the middle arrow is the incident direction of the exposure light), and the photoresist 6 on ...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap