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Photoelectric detector based on asymmetric metamaterial structure

A photodetector, asymmetric technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of response speed, detection band limitation, etc., to achieve the effects of low processing difficulty, avoidance of parasitic effects, and low production costs

Pending Publication Date: 2022-05-17
北京索通新动能科技有限公司 +1
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  • Claims
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Problems solved by technology

At present, we mainly use the photoelectric conversion and detection based on the semiconductor photoelectric effect and PN junction. Due to the limitation of the physical mechanism of the material itself, the existing photoelectric detection methods have obvious limitations in response speed and detection band. Photodetection technology with fast and wide-band response has become an important research direction

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  • Photoelectric detector based on asymmetric metamaterial structure
  • Photoelectric detector based on asymmetric metamaterial structure
  • Photoelectric detector based on asymmetric metamaterial structure

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Embodiment 1

[0025] This embodiment provides an asymmetric metamaterial structure photodetector working in the terahertz band (frequency is 0.63THz), the single metamaterial sensitive unit structure of the detector is as follows figure 1 As shown, the metamaterial structure can be prepared by ultraviolet lithography or laser direct writing technology, and the metamaterial sensitive unit is composed of the following parts:

[0026] figure 1 Part 1 is the conversion structure, the specific material is n-type doped GaAs, the size is 20μm×35μm, and the thickness is 400nm;

[0027] figure 1 The 2 parts in it are asymmetric electromagnetic resonance structures, which are asymmetrical to the A-A axis in the figure. The specific material is gold, the width is 6 μm, the outer length is 50 μm, the width of the two gaps is 6 μm, and the thickness of the gold layer is 400nm;

[0028] figure 1 The 3 parts in it are low-loss substrates in the terahertz band, and the specific material is high-purity G...

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Abstract

The invention discloses a photoelectric detector based on an asymmetric metamaterial structure. The photoelectric detector based on the asymmetric metamaterial structure can be composed of a metamaterial sensitive unit, and can also be composed of a plurality of metamaterial sensitive units in an array form. The metamaterial sensitive unit is composed of an asymmetric electromagnetic resonance structure and a conversion structure. During working, electromagnetic waves and the asymmetric electromagnetic resonance structure are coupled to generate a local high-intensity magnetic field, the conversion structure is arranged in the local high-intensity magnetic field, free carriers of the conversion structure deflect under the action of generated Lorentz force and have directional moving components, and then the free carriers are accumulated at the physical boundary of the conversion structure to form a direct-current potential difference; therefore, the conversion from the high-frequency electromagnetic wave (light) signal to the direct current is realized. The photoelectric detector provided by the invention has the outstanding advantages of simple structure, high detection speed, large response wave band range, low processing difficulty, low manufacturing cost and the like.

Description

technical field [0001] The invention belongs to the field of novel optoelectronic technology, in particular to a photodetector based on an asymmetric structure. Background technique [0002] Optical signal is one of the important signals that we can directly receive in our daily life, and photoelectric conversion is one of the important ways to effectively use optical signal. At present, we mainly use the photoelectric conversion and detection based on the semiconductor photoelectric effect and PN junction. Due to the limitation of the physical mechanism of the material itself, the existing photoelectric detection methods have obvious limitations in response speed and detection band. Photodetection technology with fast and wide-band response has become an important research direction. On the other hand, in recent years, a new type of artificially constructed wavelength-scale material - metamaterials has developed rapidly, and has unique advantages in the control of electrom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/08
CPCH01L31/0352H01L31/08
Inventor 文永正赵世强郎光辉周济王健赵国栋
Owner 北京索通新动能科技有限公司
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