Semiconductor structure

Abstract

The invention discloses a semiconductor structure. The structure comprises a first well area, a semiconductor component, a second well area and a first separating layer, wherein the semiconductor component forms on or is contacted with the first well area; the first well area forms on the second well area; and the first separating layer is used for reducing a parasitic effect of the first well area and the second well area. A depth of a bottom of the first separating layer at least reaches a depth of a bottom of the first well area. The first separating layer is an annular structure which is formed along a lateral boundary of the first well area. A mixed type of the second well area is different from a mixed type of the first well area.

Description

technical field [0001] The present invention relates to a semiconductor structure, especially a semiconductor structure with an isolation layer to reduce parasitic effects. Background technique [0002] With the gradual popularization of high-frequency applications, the manufacturing process of semiconductor structures also faces the problem of parasitic effects caused by high-frequency operation, which increases parasitic capacitance and parasitic resistance. For example, in a general single-well CMOS device, there is only a single well region, which is disposed on a semiconductor substrate. When the single-well transistor structure operates at high frequency, The parasitic effect between the well area and the substrate will cause interference and lead to poor circuit characteristics. Therefore, there are multi-well semiconductor devices in the art, such as triple-well transistor devices, which use multi-well regions to provide higher isolation effect. However, when used ...

AI Technical Summary

Problems solved by technology

However, when used in higher frequency operations, such as radio frequency (radiofrequency) applications, the parasitic effects are still difficult to reduce, so a solution is needed in the art to reduce the parasitic effects of transistor components more effectively

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