A programmable non volatile memory unit, array and its making method
A memory cell, non-volatile technology, applied in the field of arrays and their manufacturing, programmable non-volatile memory cells, can solve the problems of reducing the reliability of logic devices and increasing costs, avoiding the effect of small size, reducing manufacturing Cost and power consumption, the effect of avoiding parasitics
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[0064] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0065] In the semiconductor logic manufacturing process, in order to improve the performance of integrated circuits, it is necessary to use refractory metal silicide (Salicide) to reduce the parasitic resistance of the active region and polysilicon. Finally, a layer of metal is deposited on the silicon surface and reacted with silicon to form a metal silicide; the remaining metal is removed after the reaction is completed. Since the metal does not react with the insulating layer, it does not affect the performance of the insulating layer.
[0066] In the self-aligned refractory metal silicide manufacturing process, most of the active area and polysilicon of the large-scale integrated circuit are covered by low-resistance metal silicide. However, some areas, such as high-resistance polysilicon and active areas that are prone to breakdown, requ...
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