A programmable non volatile memory unit, array and its making method

A memory cell, non-volatile technology, applied in the field of arrays and their manufacturing, programmable non-volatile memory cells, can solve the problems of reducing the reliability of logic devices and increasing costs, avoiding the effect of small size, reducing manufacturing Cost and power consumption, the effect of avoiding parasitics
CN100589248CActive Publication Date: 2010-02-10GIGADEVICE SEMICON (BEIJING) INC
6 Cites 1 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
GIGADEVICE SEMICON (BEIJING) INC
Publication Date
2010-02-10

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a programmable nonvolatile storage unit and an array, and the manufacturing method thereof. The device comprises a metal layer, a contact hole, a barrier layer, a plurality ofpolysilicons in the passive area, a plurality of polysilicons in the active area, and a substrate in the active area. A plurality of transistors are formed by the polysilicons in the active area and asubstrate in the active area; a plurality of source lines are formed by the polysilicons in the passive area; A plurality of word lines are formed by the polysilicons in the passive area. A pluralityof bit lines are formed by the metal lines in the metal layer. A capacitor is formed by connecting the metal layer, the connecting hole, the barrier layer, and the polisilicons in the passive area one by one. The storage unit is formed by means of corresponding series connection between the transistors and the capacitor and arrayed among the word-lines, the bit-lines and the source lines, which correspond to the storage unit. The invention improves the storage stability, decreases the area of the storage, and popularizes the application of VLSI.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention mainly relates to a semiconductor memory device, in particular to a programmable non-volatile memory unit, an array and a manufacturing method thereof. Background technique

[0002] The manufacture of a System On Chip (SOC, System On Chip) is mainly based on a logic process, and designers often need to integrate a large number of non-volatile memory units inside the SOC during the R&D and design process of the SOC. According to the different uses of the designed SOC, the designer selects the appropriate type and function of the non-volatile storage unit as the internal storage unit of the SOC.

[0003] Currently, nonvolatile storage units include read-only nonvolatile storage units, programmable read-only nonvolatile storage units, programmable erasable read-only nonvolatile storage units, and the like. Among them, the existing programmable non-volatile memory unit has the following deficiencies in its structure and design method: [00...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More