Three-phase full-bridge module and manufacturing method thereof

Abstract

The invention relates to a power device electronic module, and specifically relates to a three-phase full-bridge module and a manufacturing method thereof. The three-phase full-bridge module comprisesa first-phase bridge arm, a second-phase bridge arm, a third-phase bridge arm and a metal frame, wherein the first-phase bridge arm, the second phase-bridge arm and the third-phase bridge arm respectively comprise a first power device M1 and a second power device M2; in each phase bridge arm, the drain electrode of the first power device M1 is connected with the source electrode of the second power device M2 to form a connecting pin; the connecting pins of the first-phase bridge arm, the second-phase bridge arm and the third-phase bridge arm are respectively a connecting pin A1, a connectingpin A2 and a connecting pin A3; and the metal frame comprises a metal arm, and the metal arm connects the drain electrode of the second power device M2 of the first-phase bridge arm, the drain electrode of the second power device M2 of the second-phase bridge arm and the drain electrode of the second power device M2 of the third-phase bridge arm. The parasitic resistance and the parasitic capacitance can be suppressed according to the invention.

Description

technical field [0001] The invention relates to a power device electronic module, in particular to a three-phase full-bridge module and a manufacturing method thereof. Background technique [0002] Power devices and their modules provide an effective way to realize the conversion of various forms of electric energy, and have been widely used in national defense construction, transportation, industrial production, medical and health and other fields. Since the first power device application in the 1950s, each generation of power devices has enabled more efficient conversion and use of energy. [0003] The electronic components in traditional power electronic modules are dominated by silicon-based power devices, mainly thyristors, power PIN devices, power bipolar junction devices, power MOSFETs, and insulated gate field effect transistors. In the design of electronic modules, the electrodes and electrodes of electronic components, and the electrodes and pins are often connect...

AI Technical Summary

Problems solved by technology

In the design of electronic modules, the electrodes of electronic components and between electrodes and pins are often connected by metal wires, which leads to large parasitic resistance and parasitic inductance inside the electronic module, which increases the energy loss of the electronic module

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