Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

62results about How to "Same area" patented technology

Closed henhouse ventilating system and air flow organization method

The invention belongs to the field of agriculture facilities, and relates to a closed henhouse ventilating system and an air flow organization method. The system includes a longitudinal wall (1), a mountain wall (2), hen cages (3), a wet curtain cooling device (4) and a blower (5); the hen cages (3) are in parallel to the longitudinal wall (1), and channels are formed between different lines of hen cages (3) or between the hen cage (3) at the outermost side and the longitudinal wall (1); the blower (5) is installed on the mountain wall (2) at one end, and an air inlet dual-leaf guide flow plate (7) and a compartment (6) are respectively arranged on the mountain wall (2) at the other end and the outside; the wet curtain cooling device (4) is installed on the wall body of the compartment (6) except for the mountain wall (2); two blades of the air inlet dual-leaf guide flow plate (7) are opened towards the hen cages, and vertically arranged and aligned to every channel, and its height is equal to that of the hen cages (3). The closed henhouse ventilating system can reduce the resistance to air flow by the hen cages, effectively reduce the temperature difference between the air inlet and the exhaust opening; moreover, the air flow organization is orderly and evenly distributed, and the venting and cooling efficiency is high.
Owner:CHINA AGRI UNIV

Preparation method and application of silicon-based MEMS gas sensor chip

The invention discloses a preparation method and application of a silicon-based MEMS gas sensor chip. The preparation method comprises the following steps: S1, depositing insulating materials on an upper surface of a silicon wafer substrate to obtain a cantilever supporting layer; S2, performing wafer-level metal deposition on a surface of the cantilever supporting layer to form a heating electrode; S3, depositing an insulating layer on a surface of the heating electrode in a wafer level mode; S4, preparing a corrosion window and a test electrode on a surface of the insulating layer in the wafer level mode; S5, depositing a bonding layer on a surface of the test electrode in the wafer level mode; S6, integrally preparing a gas-sensitive film on a surface of the bonding layer; S7, introducing corrosive liquid into the corrosion window, and carrying out wet etching on the silicon wafer substrate below an area where the gas-sensitive film is located to obtain a gas sensor wafer; and S8, performing scribing treatment on the gas sensor wafer to obtain a silicon-based MEMS gas sensor chip, wherein the bonding layer and the gas-sensitive film are made of the same materials. The gas sensor chip obtained by the invention has excellent gas-sensitive properties such as high stability and high sensitivity, and compatible manufacturing of a silicon-based gas-sensitive film is realized.
Owner:HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products