The invention discloses a preparation method and application of a
silicon-based MEMS gas sensor
chip. The preparation method comprises the following steps: S1, depositing insulating materials on an upper surface of a
silicon wafer substrate to obtain a
cantilever supporting layer; S2, performing
wafer-level
metal deposition on a surface of the
cantilever supporting layer to form a heating
electrode; S3, depositing an insulating layer on a surface of the heating
electrode in a
wafer level mode; S4, preparing a
corrosion window and a test
electrode on a surface of the insulating layer in the wafer level mode; S5, depositing a bonding layer on a surface of the test electrode in the wafer level mode; S6, integrally preparing a gas-sensitive film on a surface of the bonding layer; S7, introducing corrosive liquid into the
corrosion window, and carrying out wet
etching on the
silicon wafer substrate below an area where the gas-sensitive film is located to obtain a gas sensor wafer; and S8, performing scribing treatment on the gas sensor wafer to obtain a silicon-based MEMS gas sensor
chip, wherein the bonding layer and the gas-sensitive film are made of the same materials. The gas sensor
chip obtained by the invention has excellent gas-sensitive properties such as high stability and high sensitivity, and compatible manufacturing of a silicon-based gas-sensitive film is realized.