Hood curtain type read-only storage capable of storing multi order information

A read-only memory and mask-type technology, which is applied to electrical components, electric solid-state devices, semiconductor devices, etc., can solve the problems of small data storage space and small process space, etc.

Inactive Publication Date: 2003-12-03
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional mask-type ROM has a small process space, and the channel length is the same. If diff

Method used

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  • Hood curtain type read-only storage capable of storing multi order information
  • Hood curtain type read-only storage capable of storing multi order information
  • Hood curtain type read-only storage capable of storing multi order information

Examples

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Embodiment Construction

[0018] The present invention can be widely applied to many semiconductor devices, and can be made by using many different semiconductor materials. When the present invention describes the structure of the present invention with a preferred embodiment, those who know this field should know that Many steps and materials may be substituted, and these general substitutions will undoubtedly not depart from the spirit and scope of the invention.

[0019] Secondly, the present invention is described in detail with schematic diagrams as follows. When describing the embodiments of the present invention in detail, the cross-sectional view showing the semiconductor structure will not be partially enlarged according to the general scale in the semiconductor manufacturing process for the convenience of explanation, but it should not be used as a limited definition. Know. In addition, in actual production, the three-dimensional space dimensions of length, width and depth should be included....

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Abstract

A mask ROM able to store multiple bit information is composed of a substrate, the first deeper channel and second shallow channel in the substrate, a conformal dielectric layer on the side walls and bottoms of both channels, a conducting layer filled in both channels, a first doped region under the first channel, a second doped region under the second channel, and a third doped region in the surface of substrate between two channels.

Description

(1) Technical field [0001] The present invention relates to a memory element, in particular to a masked read-only memory for storing multi-bit information. (2) Background technology [0002] There are many known types of ROMs in use today; one such type is the flat ROM. In order to meet the requirement of better memory cell efficiency, the pitch and bank height of memory cells become important design considerations. When the design size of the memory cell gradually shrinks, the size of the contact window and the metal pitch also become one of the limiting factors; It will make it difficult to reduce the layout area. [0003] Generally speaking, ROM is used to store data information in a permanent, non-volatile memory form. Semiconductor read-only memory is mostly used in digital electronic devices, such as computers, business machines and game machines, etc., and data information can be permanently stored in this device. Such permanent data information includes micro-pro...

Claims

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Application Information

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IPC IPC(8): H01L27/112
Inventor 林春荣倪福隆陈昶儒
Owner MACRONIX INT CO LTD
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