Hood curtain type read-only storage capable of storing multi order information

A read-only memory and mask-type technology, which is applied to electrical components, electric solid-state devices, semiconductor devices, etc., can solve the problems of small data storage space and small process space, etc.
CN1459867AInactive Publication Date: 2003-12-03MACRONIX INT CO LTD

Patent Information

Authority / Receiving Office
CN ยท China
Current Assignee / Owner
MACRONIX INT CO LTD
Publication Date
2003-12-03
Estimated Expiration
Not applicable ยท inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A mask ROM able to store multiple bit information is composed of a substrate, the first deeper channel and second shallow channel in the substrate, a conformal dielectric layer on the side walls and bottoms of both channels, a conducting layer filled in both channels, a first doped region under the first channel, a second doped region under the second channel, and a third doped region in the surface of substrate between two channels.
Need to check novelty before this filing date? Find Prior Art

Description

(1) Technical field

[0001] The present invention relates to a memory element, in particular to a masked read-only memory for storing multi-bit information. (2) Background technology

[0002] There are many known types of ROMs in use today; one such type is the flat ROM. In order to meet the requirement of better memory cell efficiency, the pitch and bank height of memory cells become important design considerations. When the design size of the memory cell gradually shrinks, the size of the contact window and the metal pitch also become one of the limiting factors; It will make it difficult to reduce the layout area.

[0003] Generally speaking, ROM is used to store data information in a permanent, non-volatile memory form. Semiconductor read-only memory is mostly used in digital electronic devices, such as computers, business machines and game machines, etc., and data information can be permanently stored in this device. Such permanent data information includes micro-pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More