Preparation method and application of silicon-based MEMS gas sensor chip

A gas sensor and chip technology, which is applied in semiconductor/solid-state device components, instruments, scientific instruments, etc., can solve the problems of poor stability of silicon-based MEMS gas sensor chips, achieve consistent film thickness and specific surface area, and strengthen interface bonding Increased strength, improved consistency and job stability
CN114014257APending Publication Date: 2022-02-08HUAZHONG UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HUAZHONG UNIV OF SCI & TECH
Publication Date
2022-02-08

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Abstract

The invention discloses a preparation method and application of a silicon-based MEMS gas sensor chip. The preparation method comprises the following steps: S1, depositing insulating materials on an upper surface of a silicon wafer substrate to obtain a cantilever supporting layer; S2, performing wafer-level metal deposition on a surface of the cantilever supporting layer to form a heating electrode; S3, depositing an insulating layer on a surface of the heating electrode in a wafer level mode; S4, preparing a corrosion window and a test electrode on a surface of the insulating layer in the wafer level mode; S5, depositing a bonding layer on a surface of the test electrode in the wafer level mode; S6, integrally preparing a gas-sensitive film on a surface of the bonding layer; S7, introducing corrosive liquid into the corrosion window, and carrying out wet etching on the silicon wafer substrate below an area where the gas-sensitive film is located to obtain a gas sensor wafer; and S8, performing scribing treatment on the gas sensor wafer to obtain a silicon-based MEMS gas sensor chip, wherein the bonding layer and the gas-sensitive film are made of the same materials. The gas sensor chip obtained by the invention has excellent gas-sensitive properties such as high stability and high sensitivity, and compatible manufacturing of a silicon-based gas-sensitive film is realized.
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Description

technical field

[0001] The invention belongs to the technical field of gas detection, and more specifically relates to a preparation method and application of a silicon-based MEMS gas sensor chip. Background technique

[0002] Metal-oxide-semiconductor thin-film gas sensors have the advantages of high sensitivity and fast response, and have been widely used in industrial safety, biomedicine, smart cities and other fields. With the advent of the post-Moore era and the idea of ​​"MorethanMoore", new smart sensors for all-round smart sensing have become an important development direction. As an important part of smart sensors, gas sensors will move towards miniaturization and low power consumption. , The direction of integration is further developed.

[0003] In the traditional silicon-based MEMS gas sensor chip preparation method, the prepared gas-sensitive material is usually transferred to the surface of the silicon-based device by brush coating or drop coating. This step ...

Claims

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