Self-alignment grid-based GaN ultrahigh-frequency device and fabrication method thereof

A self-alignment, ultra-high-frequency technology, applied in the field of microelectronics, can solve the problem of weakened gate control capability and device withstand voltage capability, etching accuracy of sidewall expansion of etched grooves, poor uniformity of on-chip devices, etc. problems, to achieve the effect of suppressing current collapse, ensuring power conversion efficiency, and improving yield

Inactive Publication Date: 2017-11-24
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] First, when the device etches grooves under the gate, due to the instability of common methods, it often leads to the expansion of the sidewall of the etched groove and the etching accuracy is difficult to control, which reduces the confinement of the gate feet, reduces the output current, and affects Device gain, resulting in poor uniformity of on-chip devices;
[0010] The second is that the conventional T-shaped gate and the etching of the groove under the gate belong to two process steps, which puts forward high requirements on the alignment accuracy of the two steps, and the yield of the preparation method is not high;
[0011] The third

Method used

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  • Self-alignment grid-based GaN ultrahigh-frequency device and fabrication method thereof
  • Self-alignment grid-based GaN ultrahigh-frequency device and fabrication method thereof

Examples

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Example Embodiment

[0035] In the first embodiment, a high-gain UHF GaN device structure with a groove depth of 5 nm, a gate dielectric layer thickness of 4 nm, a passivation layer thickness of 2 nm, and a gate neck height of 160 nm is fabricated on a SiC substrate.

[0036] Step 1, fabricating source electrode 8 and drain electrode 9 on the GaN buffer layer 3 of the epitaxial substrate, such as figure 2 (b).

[0037] 1a) Lithography source electrode pattern and drain electrode pattern on AlGaN barrier layer 5:

[0038] 1a-1) Place the epitaxial substrate on a hot plate at 200°C and bake for 5 minutes to remove moisture from the substrate;

[0039] 1a-2) The peeling glue PMGI-SF6 is applied and spun glue on the AlGaN barrier layer 5. The spun glue thickness is about 350nm at 2000 rpm, and the formed sample is baked on a 200 ℃ hot plate Bake for 5min;

[0040] 1a-3) Apply the photoresist EPI621 and spin the glue on the peeling glue, the thickness of the glue is 770nm at 5000rpm, and then put the sample o...

Example Embodiment

[0094] In the second embodiment, a high-gain UHF GaN device structure with a groove depth of 12 nm, a gate dielectric layer thickness of 4 nm, and a passivation layer thickness of 2 nm is fabricated on a Si substrate.

[0095] Step one, fabricate source electrode 8 and drain electrode 9 on the GaN buffer layer 3 of the epitaxial substrate, such as figure 2 (b).

[0096] 1.1) Lithography source electrode pattern and drain electrode pattern on AlGaN barrier layer 5:

[0097] The specific implementation of this step is the same as step 1a) in the first embodiment;

[0098] 1.2) Use electron beam evaporation to evaporate the metal on the photoetched area of ​​the electrode to make the electrode:

[0099] The specific implementation of this step is the same as step 1b) in the first embodiment;

[0100] 1.3) Perform rapid thermal annealing treatment on the sample:

[0101] Put the sample after ohmic metal evaporation and peeling into a rapid thermal annealing furnace, 2 Perform rapid thermal ...

Example Embodiment

[0134] The third embodiment is a high-gain UHF GaN device structure fabricated on a sapphire substrate with a groove depth of 12 nm, a gate dielectric layer thickness of 8 nm, and a passivation layer thickness of 6 nm.

[0135] Step A, fabricating source electrode 8 and drain electrode 9 on the GaN buffer layer 3 of the epitaxial substrate, such as figure 2 (b).

[0136] A-1) Lithography source electrode pattern and drain electrode pattern on the AGaN barrier layer 5:

[0137] The specific implementation of this step is the same as step 1a) in the first embodiment;

[0138] A-2) On the AlGaN barrier layer 5 in the source electrode region and the drain electrode region and the source electrode region and the drain electrode region

[0139] The source electrode 8 and the drain electrode 9 are evaporated on the outer photoresist:

[0140] The specific implementation of this step is the same as step 1b) in the first embodiment;

[0141] A-3) Perform rapid thermal annealing treatment on the ...

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Abstract

The invention discloses a high-gain and ultrahigh-frequency GaN device and a fabrication method thereof. By the high-gain and ultrahigh-frequency GaN device, the problem of low frequency, gain and power conversion efficiency of an existing similar device is mainly solved. The device comprises a substrate (1), an AlN nucleating layer (2), a GaN buffer layer (3), an AlN insertion layer (4), an AlGaN barrier layer (5) and a passivation layer (7) from bottom to top, wherein a source electrode (8) and a drain electrode (9) are arranged at two ends of the GaN buffer layer, a metal interconnection layer (11) is arranged on the source electrode and the drain electrode, a self-alignment stepped dual-T-shaped electrode (10) is arranged on the AlGaN barrier layer, a groove is formed in a grid pin (101) of the grid electrode, a grid dielectric layer (6) is arranged above the groove, and the passivation layer is arranged on a surface of the barrier layer at two sides of the grid electrode pin. By the high-gain and ultrahigh-frequency GaN device, the grid electric leakage and the parasitic capacitance are reduced, the current collapse is suppressed, the power conversion efficiency and the frequency and gain characteristic of the device are improved, and the high-gain and ultrahigh-frequency GaN device can be used as a high-gain and ultrahigh-frequency device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a high-gain ultra-high frequency device, which can be used in communication, satellite navigation, radar system and base station system. Background technique [0002] With the advancement of science and technology, the existing first and second generation semiconductor devices can no longer meet the needs of higher frequency, higher power, and lower power consumption in the field of communication technology development. The new wide bandgap compound semiconductor material GaN, obtained Thanks to its wide bandgap, high breakdown electric field, and high thermal conductivity, corrosion resistance, radiation resistance and other excellent characteristics that silicon-based semiconductor materials do not have, it can greatly meet the requirements of today's communication technology. The development needs of the device have greatly improved the performance of the device, maki...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/423H01L21/331H01L21/28
CPCH01L29/778H01L21/28008H01L29/42316H01L29/66462
Inventor 马晓华郝跃武盛宓珉瀚
Owner XIDIAN UNIV
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