The invention provides a
photodiode chip preparation method and device and a
photodiode chip, and the method comprises the steps: carrying out the
etching of a current epitaxial
wafer, forming a trench window, enabling a second region where the trench window is located to be located outside a first region, and enabling the second region to surround the first region, a groove window penetrates through the P
ohmic contact layer, the
diffusion window layer, the intrinsic
absorption layer and the N-type material
contact layer, and the groove window is located on the InP substrate layer; growing an anti-reflection film on the current
surface layer;
etching the P
ohmic contact area to obtain a P window, and leading out a P
electrode at the P window; growing a
metal reflecting film on the groove window and the edge extension area of the groove window; and manufacturing an N
electrode on the back surface of the InP substrate layer to form a
photodiode chip. According to the technical scheme, the
responsivity of incident light with the
wavelength of 1310 nm can be improved, the
quantum efficiency reaches 98% or above, the
responsivity of incident light with the
wavelength of 300-755 nm is reduced, the
quantum efficiency is smaller than 2%, and the special requirement of an optical detection sensing chip is met.