2results about How to "Improve surface structure" patented technology

The invention belongs to the technical field of photocatalysis, and particularly relates to a graphite-phase carbon nitride photocatalyst based on a nitrogen-defect sulfur-doped coupled S-type homojunction as well as a preparation method and application of the graphite-phase carbon nitride photocatalyst. N-defect g-C3N4 (NA-DCN) and S-doped g-C3N4 (NA-SCN) are respectively constructed through nitric acid assisted treatment, and directed migration of photon-generated carriers is realized by using an S-type homojunction interface so as to inhibit recombination; stable interface bonding is formed through component proportion optimization, and the specific surface area and the number of active sites of the material are synchronously increased. Finally, through multi-dimensional structure regulation and control, the problems that the g-C3N4 is limited in photoresponse range, fast in carrier recombination and difficult in consideration of catalytic activity and stability are synchronously solved, the photocatalytic hydrogen production performance of the g-C3N4 is remarkably enhanced, and a reliable technical scheme is provided for large-scale application of an efficient carbon nitride-based photocatalytic material.

This invention provides a silicon-based anode composite material, its preparation method, and its application. The silicon-based anode composite material comprises a silicon-based core, a boronoxy lattice stabilizer, and an inert material. At least a portion of the boronoxy lattice stabilizer is embedded in the lattice structure of the silicon-based core, and the inert material coats the surface of the silicon-based core. This invention helps improve the initial coulombic efficiency and cycle performance of the silicon-based anode composite material.