Non-evaporable low-temperature activated zirconium getter film and preparation method thereof

A zirconium-based getter and film technology, which is applied in electrical components, vacuum evaporation plating, ion implantation plating, etc., can solve the problems of difficult smelting and processing of alloy targets, short service life of getters, and inability to use them. To achieve the effect of favoring adsorption and internal diffusion, increasing the rate and volume of inhalation, and improving the surface and internal structure

Inactive Publication Date: 2017-11-28
YUNNAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Commonly used non-evaporable getter films are mainly alloys composed of titanium, zirconium, vanadium, aluminum, hafnium, transition metals, and rare earth elements, such as Ti-Zr-V, Zr-V-Fe, Zr-Co-Re, Zr -Co-Ce, etc. Although the getter film has made great progress, there are still many deficiencies in the preparation and application: (1) Some non-evaporable material systems contain vanadium, which is extremely toxic to the human body, At the same time, the alloy target is difficult to melt and process, and the preparation cost is high
(2) The deposition rate of thin film getters prepared by DC magnetron sputtering is usually extremely low (1-8nm / min), and the deposition time is more than 10 hours, which cannot meet the high-efficiency industrial production
(3) The getter is easily oxidized when exposed to the air, and the service life of the getter is short or unusable
(4) The film has poor adhesion on smooth substrates, and the effective surface area for adsorption is small

Method used

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  • Non-evaporable low-temperature activated zirconium getter film and preparation method thereof

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Embodiment 1

[0045] The preparation method of the getter film of the present invention is to deposit a layer of adjustment layer on the polished single crystal silicon by physical vapor deposition, deposit a getter layer on the surface of the adjustment layer, and deposit a protective layer on the getter layer, and prepare Three-layer structure getter film.

[0046] First, prepare polished single crystal silicon as a deposition substrate. Use acetone, alcohol, and deionized water to ultrasonically clean the single-crystal silicon wafers for 10-20 minutes each, and bake the silicon wafers in a constant temperature oven for 1-2 hours after cleaning.

[0047] Put the silicon wafer to be cleaned into the etching system to etch for 10-30 minutes. After the silicon wafer is taken out, use acetone, alcohol, and deionized water to clean it ultrasonically, and then bake it in a constant temperature oven for 1-2 hours.

[0048] The preparation method of the adjustment layer is the radio frequency m...

Embodiment 2

[0053] The operation method and process conditions of its thin film preparation are basically the same as in Example 1, the only difference is that the substrate is first polished with sandpaper, the surface roughness is 150nm, and the cleaning process is the same as in Example 1. Under this condition, the average thickness of the adjustment layer is 150nm, the thickness of the gas absorption layer is 500nm-3μm, the particle diameter of the gas absorption layer is about 10-40nm, the columnar height is about 200nm, and the surface of the film is rough.

Embodiment 3

[0055] The operation method and process conditions of the thin film preparation are basically the same as in Example 1, the only difference is that the substrate is ultrasonically cleaned with acetone, alcohol, and deionized water for 10-20 minutes each, and the silicon wafer is baked in a constant temperature oven after cleaning. Baking for 1 to 2 hours; prepare a silicon wafer etching solution, the etching solution is an aqueous solution of NaOH and isopropanol, of which the NaOH content is 7wt.%. Put the silicon wafer in the solution and corrode it for 5 minutes, take it out and clean it with distilled water, then ultrasonically clean the single crystal silicon wafer with acetone, alcohol, and deionized water for 10-20 minutes each, and bake the silicon wafer in a constant temperature oven for 1 ~2h.

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Abstract

The invention discloses a non-evaporable low-temperature activated zirconium getter film and a preparation method thereof. The non-evaporable low-temperature activated zirconium getter film comprises an adjusting layer, a gettering layer and a protecting layer which grow on a rough monocrystalline silicon wafer sequentially, wherein in terms of chemical composition, the gettering layer contains 75%-77% by mass of zirconium, 18%-22% by mass of cobalt, 2%-5% by mass of yttrium and the balance of other inevitable impurities; in terms of a microstructure, the gettering layer is formed by densely arranged columnar grains, and the height of columnar tissue is 100-300 nm. The prepared getter film has the advantages of being environment-friendly, high in gettering capacity, low in activation temperature, high in adhesion force, long in service life, easy to prepare, low in cost and the like and is applicable to packaging of mini vacuum devices in the industrial field of microelectronics.

Description

technical field [0001] The invention relates to a getter alloy film, in particular to a non-evaporable low-temperature activated zirconium-based getter film based on magnetron sputtering technology and a preparation method thereof. Background technique [0002] Getter, which absorbs H in a vacuum or inert environment 2 , CO 2 It is an important functional material for active gases such as ions, and is widely used in high-vacuum systems, microelectronic vacuum devices, etc. that need to maintain a vacuum environment. Due to the high activation temperature, large volume and toxicity of traditional getters, they can no longer meet the requirements for use in specific fields. The non-evaporable getter film has the advantages of low activation temperature, fast getter rate, large getter capacity, high-efficiency preparation, strong adhesion, small size, and strong compatibility. It is the best choice for microelectronic MEMS devices. [0003] Commonly used non-evaporable gette...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/18C23C14/35C22C16/00H01L23/26
CPCC23C14/185C22C16/00C23C14/352H01L23/26
Inventor 单睿郭杰袁俊
Owner YUNNAN NORMAL UNIV
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