Method of dielectric barrier discharge plasma hot wire chemical gaseous phase deposition and its device

A dielectric barrier discharge, plasma technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as affecting plasma stability and uniformity, reducing hot wire life, affecting film quality, etc. , to achieve the effect of enriching species, increasing concentration, increasing quality and deposition rate

Inactive Publication Date: 2007-04-18
DALIAN UNIV OF TECH
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Problems solved by technology

These methods all intersect the plasma area and the hot wire area. The introduction of the hot wire into the plasma will seriously affect the stability and uniformity of the plasma, and the life of the ho...

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  • Method of dielectric barrier discharge plasma hot wire chemical gaseous phase deposition and its device

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Embodiment Construction

[0016] The specific embodiments of the present invention will be described in detail below in conjunction with the technical solutions and accompanying drawings.

[0017] As shown in the attached picture. Firstly, the required hot wire 8 is selected and fixed on the two hot wire electrodes 7 in the vacuum chamber 3, and the material of the hot wire 8 can be replaced according to different requirements of the experiment. Next, the substrate material to be deposited is processed, and then placed on the sample stage 9 in the center of the bottom of the vacuum chamber. Close the vacuum chamber, turn on the sample heating power supply and the temperature controller 15 after pumping the vacuum to an appropriate value, and start heating the substrate. When the temperature of the substrate reaches the desired value, the reaction gas is introduced, and the hot wire 8 is heated by the hot wire heating power supply 16 . At the same time, high-voltage alternating current is applied to t...

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Abstract

The invention discloses a method and device of plasma heater chemical vapour deposition to bring plasma by dielectric-trap discharging. It is characterized in that: Zero equipotential planes supplied by wire netting is taken as zero potential electrode of dielectric-trap discharging. Heater is on the other side of wire netting, which realizes the separation of plasma zone and heater zone. Substrate below the heater is far away from plasma to avoid high-energy ion bombard. Compared with direct current, radio-frequency and microwave plasma, dielectric-trap discharging has strongpoint including simple device, low cost and small power consumption etc. The method and device can efficiently increase film sedimentation rate and film quality. The invention is applicable for preparation of polycrystal/amorphous Si, SiC, diamond, nanophase diamond and C nanophase tube.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition, and relates to a dielectric barrier discharge plasma hot wire chemical vapor deposition method and device. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition Applied to SiO 2 , SiN, polysilicon / amorphous silicon, diamond and other thin film materials have been prepared for many years. It dissociates or excites the reactive particles through an electric field to form a plasma, and uses the abundant active particles in it to realize the low temperature deposition of various thin films. It is widely used in the preparation of microelectronic films and the development of new functional films. But its deposition rate is low, generally only 1-3 Ȧ / s, and the high-energy particles in it often cause certain damage to the film. Hot wire chemical vapor deposition uses the catalysis of hot wire to decompose gas phase reactants into active particles to obtain thin film...

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Application Information

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IPC IPC(8): C23C16/513
Inventor 刘艳红刘东平马腾才刘爱民吕博嘉
Owner DALIAN UNIV OF TECH
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