A sputtering system

A sputtering system and sputtering source technology, applied in the field of sputtering systems, can solve the problems of reducing deposition rate, affecting production efficiency, etc., and achieve the effects of increasing sputtering rate, quality, and film-forming rate
CN104746031AActive Publication Date: 2015-07-01BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Publication Date
2015-07-01

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Abstract

A sputtering system is provided. The sputtering system comprises a cavity, sputtering sources and a base. Plasma is produced in the cavity. The base is used for bearing a substrate. The sputtering system comprises at least one pair of the sputtering sources, and the sputtering sources in each pair are oppositely disposed. The base is disposed in the cavity and outside a plasma zone. The sputtering system is high in sputtering speed, low in damage to film and capable of achieving low-temperature sputtering.
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Description

technical field

[0001] The invention belongs to the field of semiconductor processing and relates to a sputtering system. Background technique

[0002] Thin film deposition technology is a technology widely used in the field of semiconductor technology, such as insulating layers and metallized conductive layers are obtained through thin film deposition technology. Physical vapor deposition equipment is a common equipment for thin film deposition technology, which obtains thin films by evaporation, ion beam, sputtering and other means. Among them, the sputtering method has the characteristics of fast deposition rate, good compactness and high purity of the obtained film, and is widely used in the industry.

[0003] figure 1 It is a schematic diagram of the mechanism of a secondary sputtering device for preparing thin films by sputtering. Such as figure 1 As shown, the secondary sputtering equipment includes a chamber 3 , a target 2 and a base 4 for carrying a substrate 7 ...

Claims

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