Preparation method of three-dimensional TiO2 crystal film
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- DONGHUA UNIV
- Publication Date
- 2012-04-18
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to a three-dimensional TiO 2 The preparation method of crystal film, specifically relates to a kind of atmospheric pressure low-temperature radio frequency glow plasma chemical vapor deposition to prepare high reactivity three-dimensional TiO 2 The method for a crystal film belongs to the technical field of thin film materials. Background technique
[0002] TiO 2 It is an excellent semiconductor photocatalytic material. The material has the advantages of good chemical stability, non-toxicity, and strong oxidation under light induction. It has shown good application prospects in energy and environment, and has been used in water splitting and dye-sensitized solar cells (DSSCs). ) aspect has been applied. in TiO 2 The following reactions exist in the process of cracking water to produce hydrogen:
[0003] (TiO 2 electrode) (1)
[0004] (counter electrode) (2)
[0005] (counter electrode) (3)
[0006] (total respo...