Method for growing nanocrystalline silicon powder
A technology of nanocrystalline silicon and powder, which is applied in the field of preparation of nanocrystalline silicon powder, can solve the problems of poor plasma stability, insufficient decomposition of raw material gas, unsuitable for large-scale industrial production, etc. Low equipment cost and uniform discharge effect
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[0031] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0032] A method for growing nanocrystalline silicon powder, the key of which is to comprise the following steps:
[0033] A. Pass the mixed gas from the inlet pipe 2 into the reaction chamber 1, the flow ratio is: argon 30-150sccm, silane 0.8-1.3sccm, hydrogen 1-10sccm, wherein, argon is the working gas, silane hydrogen is the reaction gas;
[0034] B. Input radio frequency alternating current into a pair of horizontally arranged electrodes 9 through radio frequency source 6, so that the working gas is discharged, and a plasma region 11 is formed between the quartz plates 10 as electrode barrier layers;
[0035] C. The reaction gas is decomposed by plasma in the plasma region 11, and the decomposed fragments form nanocrystalline silicon nuclei;
[0036] D, adjust the flow rate L of the gas that passes through flowmeter 14 and / or adj...
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