Super lubricating Si-doped diamond film preparation method

A diamond film and super-lubricating technology, which is applied in the plating of superimposed layers, metal material coating process, ion implantation plating, etc., can solve the problems of different lubrication effects of diamond-like films, achieve low application environment requirements, and reduce pollution , the effect of improving operational efficiency

Inactive Publication Date: 2010-01-06
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Abstract
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AI Technical Summary

Problems solved by technology

However, it has been reported in the literature that the lubrication effects of diamond-like carbon films with different silicon contents prepared by different methods and parameters in different environments are significantly different.
Moreover, at present, there are only patents for doping nano-gold and nan...

Method used

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  • Super lubricating Si-doped diamond film preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Activation of cleaned surfaces: A stainless steel piece sonicated in acetone and ethanol was placed in the sample chamber and then evacuated to 1.0×10 -3 Pa, through argon to 1.5Pa. The pulse bias power supply was turned on, the voltage was adjusted to -400V, and the duty cycle was 80%, and the surface of the stainless steel sheet was activated and cleaned with argon plasma.

[0017] Silicon plating transition layer: After cleaning, adjust the argon gas pressure to 0.25Pa, turn on the sputtering power supply, adjust the sputtering current to 3.0A, and at the same time adjust the pulse bias to -200V, with a duty cycle of 80%, and deposit for 20 minutes .

[0018] Deposition of silicon-doped diamond-like carbon film: a mixed gas of argon and methane is introduced so that the total pressure is 0.5 Pa, and the mass flow ratio of argon and methane is 3:1. The RF power is 400W, the sputtering current is 2.0A, the pulse bias is -200V, the duty cycle is 80%, and the depositio...

Embodiment 2

[0020] Activation of cleaned surfaces: A stainless steel piece sonicated in acetone and ethanol was placed in the sample chamber and then evacuated to 1.0×10 -2 Pa, through argon to 3.0Pa. Turn on the pulse bias power supply, adjust the voltage to -1200V, and the duty cycle is 30%, and use argon plasma to activate and clean the surface of the stainless steel sheet.

[0021] Silicon plating transition layer: After cleaning, adjust the argon gas pressure to 1.0Pa, turn on the sputtering power supply, adjust the sputtering current to 20.0A, and at the same time adjust the pulse bias to -1000V, the duty cycle is 30%, deposit 5 minute.

[0022] Deposition of the silicon-doped diamond-like carbon film: a mixed gas of argon and methane is introduced so that the total pressure is 4.0 Pa, and the mass flow ratio of argon and methane is 1:4. The RF power is 1500W, the sputtering current is 15.0A, the pulse bias is -1200V, the duty cycle is 30%, and the deposition is 150 minutes.

Embodiment 3

[0024] Activation of the cleaned surface: A stainless steel piece sonicated in acetone and ethanol was placed in the sample chamber and then evacuated to 5.2×10 -3 Pa, through argon to 2.0Pa. Turn on the pulse bias power supply, adjust the voltage to -1200V, and the duty cycle is 40%, and use argon plasma to activate and clean the surface of the stainless steel sheet.

[0025] Silicon plating transition layer: After cleaning, adjust the argon gas pressure to 0.8Pa, turn on the sputtering power supply, adjust the sputtering current to 10.0A, and at the same time adjust the pulse bias to -600V, the duty cycle is 60%, deposit 20 minute.

[0026] Deposition of silicon-doped diamond-like carbon film: a mixed gas of argon and methane is introduced so that the total pressure is 0.8 Pa, and the mass flow ratio of argon and methane is 1:2. The RF power is 1200W, the sputtering current is 5.0A, the pulse bias is -1200V, the duty cycle is 40%, and the deposition is 150 minutes.

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Abstract

The invention discloses a super lubricating Si-doped diamond film preparation technology with very low friction coefficient and wear rate in water environment. The invention adopts methane and argon gas as feed gas and a compound deposition technology combined by radio frequency plasma enhanced chemical vapor deposition and mid-frequency sputtering silicon target to deposit the super lubricating Si-doped diamond film on the surface of stainless steel. The film shows good wear resistant and lubricating property in water environment and has very low friction coefficient (0.005-0.009) and wear rate (1.71-8.41*10<-8>mm<3>/Nm) in a big range of load and velocity. In addition, the technology has accessible raw materials, simple devices and processes, high efficiency, fast operation, and high yield and the technology can protect the environment, save the energy and reduce the cost. The technology is estimated to have important application prospect in mechanical friction, food industry and the like.

Description

technical field [0001] The invention relates to a preparation method of a super-lubricating silicon-doped diamond-like carbon film with extremely low friction coefficient and wear rate in water environment. Background technique [0002] The rapid development of modern high-tech industry has higher and higher requirements for equipment in terms of precision, sensitivity, reliability and transmission efficiency. Therefore, there is an increasingly urgent demand for superlubricating technology with extremely low friction and wear properties. As a new type of lubricating film material, diamond-like film has excellent properties such as high hardness, small friction coefficient, long wear life, strong corrosion resistance, and good chemical stability. It is used as a protective film in harsh environments and in precision Machinery, microsystems, space environment and other related fields have shown great application prospects as lubricating thin film materials. But at the same t...

Claims

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Application Information

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IPC IPC(8): C23C28/00C23C14/34C23C16/26
Inventor 陈建敏赵飞周惠娣李红轩吉利
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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