Super lubricating Si-doped diamond film preparation method
A diamond film and super-lubricating technology, which is applied in the plating of superimposed layers, metal material coating process, ion implantation plating, etc., can solve the problems of different lubrication effects of diamond-like films, achieve low application environment requirements, and reduce pollution , the effect of improving operational efficiency
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Embodiment 1
[0016] Activation of cleaned surfaces: A stainless steel piece sonicated in acetone and ethanol was placed in the sample chamber and then evacuated to 1.0×10 -3 Pa, through argon to 1.5Pa. The pulse bias power supply was turned on, the voltage was adjusted to -400V, and the duty cycle was 80%, and the surface of the stainless steel sheet was activated and cleaned with argon plasma.
[0017] Silicon plating transition layer: After cleaning, adjust the argon gas pressure to 0.25Pa, turn on the sputtering power supply, adjust the sputtering current to 3.0A, and at the same time adjust the pulse bias to -200V, with a duty cycle of 80%, and deposit for 20 minutes .
[0018] Deposition of silicon-doped diamond-like carbon film: a mixed gas of argon and methane is introduced so that the total pressure is 0.5 Pa, and the mass flow ratio of argon and methane is 3:1. The RF power is 400W, the sputtering current is 2.0A, the pulse bias is -200V, the duty cycle is 80%, and the depositio...
Embodiment 2
[0020] Activation of cleaned surfaces: A stainless steel piece sonicated in acetone and ethanol was placed in the sample chamber and then evacuated to 1.0×10 -2 Pa, through argon to 3.0Pa. Turn on the pulse bias power supply, adjust the voltage to -1200V, and the duty cycle is 30%, and use argon plasma to activate and clean the surface of the stainless steel sheet.
[0021] Silicon plating transition layer: After cleaning, adjust the argon gas pressure to 1.0Pa, turn on the sputtering power supply, adjust the sputtering current to 20.0A, and at the same time adjust the pulse bias to -1000V, the duty cycle is 30%, deposit 5 minute.
[0022] Deposition of the silicon-doped diamond-like carbon film: a mixed gas of argon and methane is introduced so that the total pressure is 4.0 Pa, and the mass flow ratio of argon and methane is 1:4. The RF power is 1500W, the sputtering current is 15.0A, the pulse bias is -1200V, the duty cycle is 30%, and the deposition is 150 minutes.
Embodiment 3
[0024] Activation of the cleaned surface: A stainless steel piece sonicated in acetone and ethanol was placed in the sample chamber and then evacuated to 5.2×10 -3 Pa, through argon to 2.0Pa. Turn on the pulse bias power supply, adjust the voltage to -1200V, and the duty cycle is 40%, and use argon plasma to activate and clean the surface of the stainless steel sheet.
[0025] Silicon plating transition layer: After cleaning, adjust the argon gas pressure to 0.8Pa, turn on the sputtering power supply, adjust the sputtering current to 10.0A, and at the same time adjust the pulse bias to -600V, the duty cycle is 60%, deposit 20 minute.
[0026] Deposition of silicon-doped diamond-like carbon film: a mixed gas of argon and methane is introduced so that the total pressure is 0.8 Pa, and the mass flow ratio of argon and methane is 1:2. The RF power is 1200W, the sputtering current is 5.0A, the pulse bias is -1200V, the duty cycle is 40%, and the deposition is 150 minutes.
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