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Millimeter-wave broadband ridged probe radial waveguide power divider/combiner

A technology of radial waveguide and ridge probe, which is applied in the field of millimeter waves, can solve problems such as the difficulty in processing and assembling coaxial inner conductor probes, the small size and structure of coaxial probes and coaxial waveguides in the millimeter wave band, and achieve power High distribution/combination efficiency, reduced path loss, and improved working bandwidth

Active Publication Date: 2018-02-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the size and structure of coaxial probes and coaxial waveguides in the millimeter wave band are small, which brings great difficulties to the processing and assembly of coaxial inner conductor probes

Method used

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  • Millimeter-wave broadband ridged probe radial waveguide power divider/combiner
  • Millimeter-wave broadband ridged probe radial waveguide power divider/combiner
  • Millimeter-wave broadband ridged probe radial waveguide power divider/combiner

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Embodiment Construction

[0054] Below in conjunction with the accompanying drawings, taking the embodiment of the 10-way power distribution / combiner in the Q-band as an example, a millimeter-wave broadband ridge probe radial waveguide power distribution / combiner according to the present invention will be further described, but the present invention is not limited in this example.

[0055] Such as figure 1 Shown is a Q-band 10-channel power divider / combiner according to an embodiment of the present invention. The coaxial input waveguide 1 feeds power signals or outputs the synthesized signals to the outside. The radii a and b of the inner and outer conductors are 0.478mm and 1.1mm respectively.

[0056] In this embodiment, the radius of the 1 / 4 arc of the outer conductor of the transition structure 2 is 5mm, and the length L of the transition structure is 2.5π. The inner conductor curve is composed of 20 segments of circular arcs, that is, M=20. Transition Structure 2 Input Impedance Z 0 The same ...

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Abstract

The invention belonging to the field of the millimeter wave technology discloses a millimeter-wave broadband ridged probe radial waveguide power divider / combiner. The radial waveguide power divider / combiner comprises a coaxial input waveguide, a transition structure, a radial waveguide, and an N-path ridged probe coupled output array. According to the invention, with the broadband low-reflection transition structure for the coaxial waveguide to the radial waveguide, a matched circular ring structure, and the power distribution mode of the ridge probe, the working bandwidth of the power divider / combiner is increased; the radial waveguide power divider completes power distribution by one-time operation, so that the path losses of the power distribution is reduced; and because of the circumferential symmetry of the structure and the radial waveguide working mode, the amplitude-phase consistency of all paths of signals after distribution is guaranteed, so that the high power synthesis efficiency of the power combiner is realized.

Description

technical field [0001] The invention belongs to the technical field of millimeter waves, and in particular relates to a radial waveguide power distribution / combiner. Background technique [0002] In recent years, the rapid development of millimeter wave technology has put forward higher and higher requirements for the power level and working bandwidth of millimeter wave communication systems. Therefore, millimeter-wave power amplifiers with high output power and wide operating frequency bandwidth are becoming more and more popular. Solid-state power amplifiers have the advantages of small size, light weight, low supply voltage, and good reliability, making them ideal for millimeter-wave power amplifiers. But as the frequency rises into the millimeter wave band, the solid-state chip size shrinks. Affected by factors such as semiconductor physical characteristics, processing technology, impedance matching, and chip heat dissipation, the output power of a single chip is limit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P5/22H01P3/00H01P3/02H01P3/06H01P3/123H01P1/02H01P11/00
CPCH01P1/022H01P3/00H01P3/02H01P3/06H01P3/123H01P5/22H01P11/001
Inventor 蒲友雷孙健健吴泽威方波唐洪罗勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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