Nickel-platinum alloy target and preparation method thereof

A technology of nickel-platinum alloy and target material, which is applied in the field of nickel-platinum alloy target material and its preparation, can solve the problems of increased film impedance and achieve the effect of uniform thickness and less particles

Inactive Publication Date: 2014-09-03
郑州海普电子材料研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Pt segregated on the lower surface (that is, the interface in contact with Si) can reduce or eliminate encroachment defects, while Pt segregated on the upper surface will increase the resistance of the Ni(Pt)Si film

Method used

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  • Nickel-platinum alloy target and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The inventor concentrated on research and practiced many times to improve the optimal method for making nickel-platinum alloy targets. The process flow is as follows figure 1 As shown, it mainly includes the following steps:

[0030] Step (1): Weigh electrolytic nickel with a purity of 99.99% and platinum powder with a purity of 99.95% according to the platinum content of the raw material at 5 at.%, disperse the electrolytic nickel and platinum powder into a graphite crucible, and adopt the method of vacuum induction melting Smelt nickel-platinum alloy ingots.

[0031] Step (2), under the condition of a vacuum degree of 4Pa, use a vacuum electron beam to drip melt the nickel-platinum alloy ingot into a high-purity Ni-5at.%Pt alloy ingot with a diameter of 300mm; high-purity Ni-5at. The purity of the %Pt alloy ingot is greater than 99.995%, and the oxygen content is less than 50ppm.

[0032] Step (3), before radial hot forging, preheat the Ni-5at.%Pt alloy ing...

Embodiment 2

[0038] A method for preparing a nickel-platinum alloy target, comprising the following steps:

[0039] Step (1): Weigh electrolytic nickel with a purity of 99.99% and platinum powder with a purity of 99.95% according to the platinum content in the raw material of 10 at.%, disperse the electrolytic nickel and platinum powder into a graphite crucible, and adopt the method of vacuum induction melting Smelting Ni-10at.%Pt alloy ingots.

[0040] Step (2), under the condition of vacuum degree of 4Pa, use vacuum electron beam to drip melt the Ni-10at.%Pt alloy ingot into a high-purity nickel-platinum alloy ingot with a diameter of 300mm; high-purity Ni-10at.%Pt The purity of the alloy ingot is greater than 99.995%, and the oxygen content is less than 50ppm.

[0041] Step (3), before radial hot forging, preheat the high-purity Ni-10at.%Pt alloy ingot by heating the high-purity Ni-10at.%Pt alloy ingot to 1000°C; then At 1000°C, the air hammer is used to hit the high-purity Ni...

Embodiment 3

[0046] A method for preparing a nickel-platinum alloy target, comprising the following steps:

[0047] Step (1): Weigh electrolytic nickel with a purity of 99.99% and platinum powder with a purity of 99.95% according to a platinum content of 20 at.% in the raw material, disperse the electrolytic nickel and platinum powder into a graphite crucible, and use vacuum induction melting Methods Ni-20 at.%Pt alloy ingots were smelted.

[0048] Step (2), under the condition of vacuum degree of 3Pa, the Ni-20 at.%Pt alloy ingot is drip melted by vacuum electron beam (drip melting) into a high-purity Ni-20 at.%Pt alloy ingot with a diameter of 300mm; The purity of the high-purity Ni-20 at.%Pt alloy ingot is greater than 99.995%, and the oxygen content is less than 50ppm.

[0049] Step (3), before radial hot forging, preheat the high-purity Ni-20 at.%Pt alloy ingot. The preheating method is to heat the high-purity Ni-20 at.%Pt alloy ingot to 1150°C ; Then use an air hammer to hi...

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Abstract

The invention relates to a preparation method of a nickel-platinum alloy target. The preparation method comprises the following steps in sequence: smelting raw materials including nickel and platinum in a crucible at high temperature to obtain a nickel-platinum alloy ingot; smelting the nickel-platinum alloy ingot by adopting a vacuum electron beam to obtain a high-purity nickel-platinum alloy ingot; carrying out radial hot forging and annealing treatment on the high-purity nickel-platinum alloy ingot; carrying out longitudinal heading and annealing treatment on the high-purity nickel-platinum alloy ingot; carrying out hot rolling, cold rolling and re-crystallization annealing treatment on the high-purity nickel-platinum alloy ingot to form a nickel-platinum alloy target blank; machining the nickel-platinum alloy target blank to form the nickel-platinum alloy target. The preparation method has the advantages that the nickel-platinum alloy target with uniform components, high purity, fine crystal grains and low oxygen content is obtained through the steps of high temperature smelting, smelting with the vacuum electron beam, radial hot forging and annealing treatment, longitudinal heading and annealing treatment, hot rolling, cold rolling and re-crystallization annealing treatment and the like; the target is beneficial for obtaining films with uniform thickness, few grains and high quality.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing, and in particular relates to a nickel-platinum alloy target material and a preparation method thereof. Background technique [0002] In semiconductor devices, such as Field-Effect-Transistor (abbreviated FET), that is, field-effect transistors, NiSi is an important and frequently used contact material, but it is also often the cause of defects in semiconductor devices. These defects appear in the form of NiSi formed at the edge of the masking spacer and NiSi formed in the direction of the FET junction. These so-called encroachment defects have been observed at almost all technology nodes since 65nm. It is known that adding a certain amount of Pt during the formation of NiSi can reduce or eliminate encroachment defects. Ni-5at.%Pt is successfully used in 65nm technology, while Ni-10at.%Pt is used in 45nm technology. With the further reduction of the line width of semiconductor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/34C22F1/10C22C1/02C22C19/03
Inventor 邵玲王广欣赵学义
Owner 郑州海普电子材料研究院有限公司
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