147 results about "Laser damage" patented technology

The invention discloses acousto-optic chalcogenide glass with a high laser damage threshold, the chemical composition formula of the acousto-optic chalcogenide glass is GexSySez, x, y and z respectively represent the mole fractions of Ge, S and Se, x = 10-30, y = 5-40, z = 40-70, x + y + z = 100, and the microscopic network structure of the acousto-optic chalcogenide glass contains a [GeSe4] tetrahedron, a [GeSSe3] tetrahedron, a [GeS2Se2] tetrahedron, a [GeS3Se] tetrahedron, a [GeS4] tetrahedron and a Se ring. The acousto-optic chalcogenide glass provided by the invention has a relatively high laser damage threshold Fth (9.72-15.58 J / cm < 2 > at1550 / 20ns / 5kHz), a relatively low thermo-optic coefficient dn / dT and good acousto-optic characteristics and mechanical properties, is high in near-infrared band transmittance, and has a relatively high laser damage threshold while ensuring a high acousto-optic quality factor. The material can be used as a material basis for developing high-performance and high-stability infrared acousto-optic modulation devices.

The invention discloses Ge-Sn-Se-S acousto-optic chalcogenide glass, the chemical composition formula of the Ge-Sn-Se-S acousto-optic chalcogenide glass is Ge20SnxSe80-x-ySy, x and y respectively represent molar fractions of Sn and S, x is equal to 5-12.5, y is equal to 0-25, and a basic network unit of a glass frame of the Ge-Sn-Se acousto-optic chalcogenide glass is of a stable tetrahedral structure with Ge or Sn as the center. The acousto-optic chalcogenide glass is large in composition regulation and control range, easy to form, non-toxic, environment-friendly, green and quaternary chalcogenide glass system, high in linearity and refractive index and high in acousto-optic performance, the acousto-optic quality factor M2 under the wavelength of 1550 nm is 211.8 * 10 <-18 > s < 3 > / g to 348.9 * 10 <-18 > s < 3 > / g, the ultrasonic attenuation alpha under the ultrasonic frequency of 10 MHz is 0.72 dB / cm to 4.89 dB / cm, the laser damage threshold value is 2.94 J / cm < 2 > to 15.54 J / cm < 2 >, and the acousto-optic chalcogenide glass can be used for preparing the acousto-optic chalcogenide glass. The material has the potential of being applied to acousto-optic devices for high-power laser modulation, and can be widely applied to the acousto-optic field as an acousto-optic medium.

The invention relates to the technical field of optics, and discloses an integrated system for monitoring a laser damage threshold so as to be compatible with two different damage mechanisms of continuous laser and pulse laser. The system includes: a focus lens driven to displace on a linear displacement stage in an optical axis direction; the first diaphragm is positioned between the sample displacement table and the focusing lens and forms an included angle with the optical axis; the light spot quality analyzer is positioned in the reflection direction of the first diaphragm; the optical path of the first diaphragm transmitted to the tested sample is equal to the optical path of the first diaphragm reflected to the light spot quality analyzer; the main controller is used for judging whether the detected sample is damaged or not based on data of the photoelectric detector in the process that the focusing lens displaces from large to small according to the light spot size of the detected sample after the output light beam of the light source is stable; and according to the stable value recorded by the power meter or the energy meter and the light spot area of the light spot quality analyzer at the damage occurrence moment, the two types of laser damage thresholds of the detected sample are determined in sequence.

The invention provides a high-energy laser damaged material surface temperature monitoring system and method.The high-energy laser damaged material surface temperature monitoring system comprises a high-energy laser light source, a homogenizing optical fiber beam expanding system, a material sample fixing system and a material surface temperature monitoring system, and laser generated by the high-energy laser light source is output after being homogenized and expanded by the homogenizing optical fiber beam expanding system; the output homogenized high-energy laser acts on an irradiation target material sample after beam expansion, the material surface temperature monitoring system comprises a high-precision target acquisition system, a binocular vision imaging system and a multispectral wavelength temperature measurement system, and the target acquisition system is used for acquiring infrared heat radiation on the surface of a laser irradiation material; the binocular vision imaging system is used for realizing three-dimensional thermal imaging of the laser irradiation target material sample piece according to the collected infrared thermal radiation, and the multispectral wavelength temperature measurement system is used for realizing three-dimensional temperature measurement of the laser irradiation target material sample piece according to the three-dimensional thermal imaging. By applying the technical scheme of the invention, the technical problem that three-dimensional temperature monitoring is difficult to realize in the prior art is solved.

The invention belongs to the technical field of 3D printing, and particularly relates to a continuous pulse mixed type patterning laser powder bed light path system and method.Laser powder is preheated to be close to a melting point but not molten through set continuous-period light emitting, the preheated laser powder is completely molten through pulse-period light emitting, and in other words, the continuous pulse mixed type patterning laser powder bed light path system and method are obtained; continuous light is only used for preheating powder for a short time, so that the powder is close to a melting point but not molten; then peak energy is rapidly provided through microsecond pulsed light, powder melting is completed instantly, in this way, the effective heating time is shortened, the heat radiation range of heating is controlled, the heating time of a system is far shorter than the heating time of traditional continuous light, melting and solidification are completed when heat is not diffused out of a preset pattern in time, and the production efficiency is greatly improved. Therefore, the fusion area is limited within the pattern range, the subsequent part forming precision is improved, and laser loss caused by too high peak power due to short time is reduced through pulse light emitting and continuous light emitting.

The invention discloses a solar cell, a manufacturing method thereof and a photovoltaic module, relates to the technical field of photovoltaics, and is used for reducing the frequency of reciprocating motion of laser spots in a patterning treatment process, reducing laser damage, facilitating improvement of the conversion efficiency of the solar cell and improving the productivity of patterning treatment. The solar cell includes a semiconductor substrate and a first doped semiconductor layer. The first doped semiconductor layer is disposed on a local region of the first surface. The first doped semiconductor layer comprises a plurality of first strip-shaped regions which extend along the first direction and are distributed at intervals along the second direction. The first doped semiconductor layer includes a first boundary extending in a first direction and a second boundary extending in a second direction. The first boundary is provided with a plurality of first protruding units which fluctuate in the second direction and are sequentially distributed in the first direction, and the second boundary is provided with a plurality of second protruding units which fluctuate in the first direction and are sequentially distributed in the second direction. The width of the first protruding unit is smaller than that of the second protruding unit.

The invention discloses an all-silicon-based medium optical thin film and an all-fiber laser, and relates to the technical field of optical thin films, the number of layers of the optical thin film is 15, and the structure of the optical thin film is ML (HL) 6M; h represents high-refractive-index material silicon hydride or amorphous silicon, L represents low-refractive-index material silicon oxide, M represents high-refractive-index material silicon nitride, (HL) 6 is a 12-layer reflecting film stack, and ML and M respectively form anti-damage film stacks on two sides. On the premise that the thickness is reduced and the anti-laser-damage effect is improved, effective adaptation of a middle-infrared band pumping source is achieved, and the problems that an existing optical thin film is large in thickness, poor in anti-laser-damage effect and incapable of effectively adapting to the middle-infrared band pumping source are solved; and secondly, electric field distribution can be optimized, so that the optical thin film has more excellent spectral performance. And thirdly, the laser can be directly deposited on the optical fiber end face to serve as an endoscope, and the technical problem that an existing optical fiber laser is complex in structure is solved.

The invention relates to the technical field of ultrafast laser, in particular to an ultraviolet laser damage inhibition method and device for a fused quartz optical element, and the method comprises the steps: obtaining oxy-18 modified DKDP crystals with oxy-18 isotope abundance higher than natural abundance; preparing the oxy-18 modified DKDP crystal into a wave plate matched with a preset ultraviolet laser wavelength; in an ultraviolet laser light path of a laser inertial confinement fusion device, a wave plate is arranged between a linear polarization state output end of ultraviolet laser and a fused quartz optical element; and enabling ultraviolet laser to sequentially pass through the linear polarization state output end and the wave plate to form circularly polarized light, and irradiating the circularly polarized light to the fused quartz optical element. The invention aims to realize the small-scale self-focusing effect of actively inhibiting fused quartz and solve the technical problem that a traditional material cannot be used as a large-aperture wave plate due to over-high transverse stimulated Raman scattering.

This invention discloses a method for preparing a high-performance SiO2 antireflection film, comprising: preparing sol A and sol B using a simple and efficient sol-gel method; performing plasma cleaning on the substrate; and performing alternating deposition of the two sols multiple times using a dip-coating method to obtain a high-performance multilayer SiO2 antireflection film with high transmittance, high laser damage threshold, and good environmental stability in the wavelength range of 1000nm to 1100nm. The high-performance multilayer SiO2 antireflection film has eight layers. Sol A is prepared using an ammonia-catalyzed sol, which has high porosity, resulting in high transmittance of the deposited film. Sol B is prepared using a hexamethyldisilazane-modified sol. The surface layer deposited with hexamethyldisilazane-modified sol introduces a large number of nonpolar hydroxyl groups on the film surface, effectively preventing water vapor and organic pollutants from entering the film pores, thereby improving the film's environmental stability, laser damage resistance, and mechanical strength.

The application provides a low-laser-damage back contact heterojunction solar cell manufacturing method, which comprises the following steps: A, a first conductive type film layer is arranged on a part of a first main surface of a semiconductor substrate to form a first conductive region of the first conductive type, and the specific method of the step A is as follows: a1, a first conductive type film layer, a first insulating layer and a laser absorption sacrificial layer are sequentially formed on the first main surface of the semiconductor substrate; a2, the laser absorption sacrificial layer in a region other than the first conductive region is removed by laser etching; and a3, the first insulating layer and the first conductive type film layer not covered by the laser absorption sacrificial layer are removed by chemical etching to form the first conductive region with the insulating film layer attached to the surface. The application aims to provide a low-laser-damage back contact heterojunction solar cell manufacturing method, which can reduce laser damage, reduce the influence of thermal decay and improve photoelectric conversion efficiency.

The invention relates to the technical field of satellite protection, in particular to an anti-laser broadband efficient retroreflector for satellites, which comprises a metal substrate, a phase change alloy array, a retroreflection microstructure array and a multi-layer optical dielectric film, and is characterized in that the metal substrate is of a hollow box type structure consisting of an upper substrate, a lower substrate and side plates with grids; the phase change alloy array is arranged in the metal substrate and is composed of an Al-Si alloy phase change material; the retro-reflection microstructure array is arranged above the upper substrate, the bottom of the retro-reflection microstructure array is triangular, hexagonal or rectangular, and the top of the retro-reflection microstructure array is of a pointed cone structure composed of three inclined planes; and a plurality of layers of optical medium films are plated on the surface of the retroreflection microstructure array. The Al-Si alloy layer prepared through the substrate can absorb a large amount of heat through phase change, so that the laser damage threshold value and the protection performance are improved, and efficient retroreflection of incident laser is achieved.

The invention discloses a method and a device for determining a laser damage index of an optical fiber tunnel and electronic equipment. The method comprises the following steps: acquiring a plurality of working condition scenes corresponding to an optical fiber tunnel; determining laser temperature parameters respectively corresponding to the plurality of tunnel areas; determining transmission attenuation indexes respectively corresponding to the plurality of working condition scenes; determining a plurality of spatial distances respectively corresponding to the plurality of optical fiber devices; and according to the laser temperature parameters corresponding to the plurality of tunnel areas, the transmission attenuation indexes corresponding to the plurality of working condition scenes, and the plurality of spatial distances corresponding to the plurality of optical fiber devices, determining a laser damage index corresponding to the optical fiber tunnel. According to the method and the device, the technical problem that the laser damage index of the optical fiber tunnel is determined inaccurately when the laser damage index of the optical fiber tunnel is determined in related technologies is solved.

The application relates to the technical field of fiber gratings, and discloses a preparation method of a large-area fiber grating and the fiber grating. The method is to make a glass tube with a refractive index close to that of a fiber coating adhere to the fiber under the action of high temperature by using the collapsing glass tube method, so that the femtosecond laser damage threshold of the fiber boundary is improved, the writing area of the fiber grating is increased, and even the modulation area introduced by the femtosecond laser can cross the two areas of the fiber and the glass tube, so that the fiber grating covering the whole cross section of the fiber is prepared. Meanwhile, the refractive index of the glass tube is close to that of the coating, so that the mode deformation and loss are not caused.

The invention provides a long-wave infrared laser reflector with a three-medium structure. The long-wave infrared laser reflector structurally comprises a substrate Sub, a transition layer B, a metal layer G, a medium film system C and an air layer A from bottom to top. The dielectric film system C is structurally characterized by being formed by alternately stacking one or more groups of materials with high, medium and low refractive indexes. The invention aims to realize high reflection of a long-wave infrared band. Through meticulous design, three kinds of materials with high, medium and low refractive indexes are reasonably distributed in the reflector. According to the strategy, the absorption of the reflector is effectively reduced by balancing the low absorption of the chalcogenide and the low refractive index of the fluoride, the temperature rise caused by heat absorption is remarkably reduced, and meanwhile, the reflectivity is improved. Therefore, the continuous laser damage threshold value of the reflecting mirror is greatly enhanced theoretically, and the reflecting mirror shows higher stability and tolerance when facing continuous laser irradiation.

The application provides a magnetic field enhanced coupling plasma processing device and method, which comprises a capacitively coupled plasma device and a racetrack magnetic pole device; the capacitively coupled plasma device comprises an upper anode plate and a lower cathode plate, a plasma working area is formed between the upper anode plate and the lower cathode plate, and an electric field is formed between the upper anode plate and the lower cathode plate; the racetrack magnetic pole device comprises a moving device and a racetrack magnetic pole installed on the moving device, the moving device drives the racetrack magnetic pole to move along a plane parallel to the lower cathode plate; the racetrack magnetic pole comprises adjacent permanent magnets with opposite magnetic poles, and the permanent magnets form an additional coupling magnetic field which restricts the bipolar diffusion motion of electrons in the electric field. The application modulates the density, distribution and directional drift of the multi-field coupled plasma, greatly improves the actual processing efficiency of difficult-to-process materials, makes the plasma rapid processing of medium-large aperture optical elements possible, and improves the laser damage resistance of the elements.

The present application relates to laser damage detection, in particular to a kind of laser damage automatic judging method based on computer vision, the laser radiation before image of the element to be measured is collected, and the image after laser radiation, and the image before laser radiation, the image after laser radiation are preprocessed;Determine the region of interest in the image before laser radiation, the image after laser radiation based on the possible damage location of the element to be measured, and adopt sliding window and move along the region of interest in the image before laser radiation, the image after laser radiation simultaneously;Similarity index between corresponding local window image in each sliding window is calculated based on similarity measurement model;Similarity index is input into classifier, and whether the element to be measured appears laser damage is judged according to the output result of classifier;The technical scheme provided by the present application can effectively overcome the defects that the prior art cannot accurately, efficiently judge whether optical element appears laser damage, and intuitively reflect laser damage detection result.

The present application relates to the technical field of solar cells, and discloses a solar cell and a preparation method therefor, and a photovoltaic module, used for solving the problem in the prior art of the photoelectric conversion efficiency of shingled solar cells being affected due to the passivation performance and other performance of shingled solar cells being affected by laser damage areas of the shingled solar cells. The solar cell comprises a first surface and a second surface opposite to each other, and a side surface connecting the first surface and the second surface. The side surface comprises at least one first area, the at least one first area comprising a plurality of fused silicon areas, and a first texture area between at least two fused silicon areas.

The application discloses a self-limiting pipe end welding interface laser rust removal device, and relates to the technical field of laser rust removal.The device comprises a main frame, a clamping mechanism, an axial limiting assembly and a laser rust removal execution mechanism;the bottom of the main frame is provided with a fixed arc-shaped plate matched with a steel pipe, and a limiting plate is arranged at one end of the axial limiting assembly to realize axial self-limiting;the clamping mechanism is matched with an adjustable bolt through flexible deformation of an arc-shaped clamping piece, so that the device is quickly clamped and fixed on the steel pipe.The middle part of the main frame is provided with an operation window opposite to the surface of the pipe end to be rusted;the laser rust removal execution mechanism is matched with an arc-shaped limiting rail through a sliding support, so that the laser gun is driven to move along the circumferential track of the surface of the pipe end to be rusted accurately, and the laser focal point is stable.The device has compact structure and high portability, can realize quick positioning and uniform rust removal of the surface of the pipe end of the steel pipe to be rusted, reduces the difficulty of manual operation on site, avoids laser damage to the steel pipe base body, and effectively improves the efficiency and quality of rust removal before welding.

1. The name of the design product: large-format laser cutting machine protective cover (H4.0). 2. The use of the design product: used in the process of laser cutting protection, to avoid laser damage to the human body, while protecting the internal structure of the cutting machine. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The invention provides a method for measuring the minimum out-of-focus distance of a turbine blade with femtosecond laser critical damage, and relates to the technical field of femtosecond laser processing, and the method comprises the following steps: manufacturing a plurality of groups of different types of samples, and configuring a plurality of samples in each group of the same type; dividing each group of samples of different types into a group of distance test units; the femtosecond laser processing technology is utilized, based on the safe defocusing distance, the defocusing distance in each time of processing is gradually reduced until the defocusing distance in the last time of processing is zero, and femtosecond laser processing of the multiple sets of distance testing units under different defocusing distances is completed; according to the types of the samples, performing performance detection on the different types of samples subjected to femtosecond laser processing; and determining the minimum defocusing distance of the femtosecond laser damage sample according to a performance detection result. According to the method provided by the invention, filling protection in a blade cavity is unnecessary in the process of repairing the air film hole of the turbine blade of the aero-engine, so that the processing efficiency is improved, and the product quality is ensured.

The application relates to the technical field of optical detection equipment, and discloses a device and a processing method for testing the laser damage threshold of a sample, which can quickly and accurately lock the spot size when damage occurs. The method comprises the following steps: converting a received laser signal that has passed through a measured sample into an electrical signal output by means of a photoelectric detection module; amplifying the electrical signal output by the photoelectric detection module by means of a signal amplification module; performing peak detection and smoothing processing on the voltage signal output by the signal amplification module by means of a peak detection module to obtain a voltage signal representing the peak intensity of laser; outputting a high-level signal when the voltage signal output by the peak detection module is higher than a reference voltage by means of a voltage comparator configured in a same direction comparison mode in a voltage comparison module; and cutting off the power supply circuit of the motor to lock the spot size corresponding to the moment of power mutation by means of a lock module comprising a MOS tube connected in series in a motor on-off control circuit when the voltage comparator outputs a high-level signal.

The invention discloses a large-size KDP crystal growth simple continuous filtering growth device and a growth method, and belongs to the field of crystal preparation. The growth device comprises a crystal growth tank, a program temperature control water tank and a filtering system. The crystal growth tank is used for rapid and slow growth of KDP crystals under continuous filtration conditions, and can realize programmed cooling growth of the KDP crystals. The program temperature control water tank is used for heating the solution from the growth tank and filtering the growth solution in an overheated state, and the filtering system is used for filtering the growth solution in the overheated state and improving the cleanliness of the growth solution. Reducing the temperature of the filtered growth solution to the temperature of the growth tank, and enabling the growth solution to enter the growth tank for continuous growth to ensure the supersaturation stability of the growth tank. Under a continuous filtering condition, the optical performance of the grown KDP crystal is integrally improved, and particularly, the laser damage resistance threshold is improved by 2-4 times.

The invention relates to a seamless splicing grating, in particular to a method for manufacturing a seamless splicing grating based on a dynamic straight-edge diaphragm, which comprises the following steps of: aligning the edge of the dynamic straight-edge diaphragm with a splicing seam position mark on one side of a substrate, performing simple harmonic motion on the dynamic straight-edge diaphragm along the direction vertical to the splicing seam, realizing dynamic scanning and completing first interference exposure; the edge of the dynamic straight-edge diaphragm is aligned with the abutted seam position mark on the other side of the substrate, stripe locking is carried out by utilizing the grating latent image reserved by the first exposure, so that the dynamic straight-edge diaphragm carries out simple harmonic motion in the direction perpendicular to the abutted seam, dynamic scanning is realized, and second interference exposure is completed; carrying out unified development on the exposed substrate to obtain a photoresist grating mask without splicing seams, and transferring a grating structure on the mask to a dielectric substrate; according to the technical scheme, the defects that in the prior art, due to abutted seam modulation, the laser damage resistance is poor, and the machining difficulty is large can be effectively overcome.

This invention relates to a method for high-precision non-destructive evaluation of the laser damage threshold of crystals. The method includes: characterizing the defect states of the crystal under test using a photoluminescence testing system to obtain internal defect state information; testing the surface absorption characteristics of the crystal under test using a photothermal weak absorption testing system to obtain an absorption coefficient correction factor; inputting the defect state information and the absorption coefficient correction factor into a free electron density analysis model containing defect state terms to calculate the free electron density under laser irradiation conditions; calculating the temperature field distribution and thermal stress distribution of the crystal using an optical-thermal-mechanical multiphysics coupling analysis model based on the free electron density; and determining the laser damage threshold of the crystal under test based on the comparison results of the free electron density, temperature field distribution, and thermal stress distribution with a preset damage threshold. This invention achieves high-precision non-destructive evaluation of the laser damage threshold of crystals, significantly reducing testing costs and improving evaluation accuracy.

The invention provides a three-step polishing method for suppressing high-frequency errors in CO2 laser polishing of a fused quartz element, and belongs to the technical field of laser processing of optical elements. The invention aims to solve the problem that the optical transmission performance and the laser damage resistance of a fused quartz element are severely influenced by medium-high frequency error induced far-field light modulation and high-frequency error induced near-field light field enhancement when the fused quartz element is processed by laser. The method comprises the first step of laser preheating, the second step of high-speed multi-layer polishing and the third step of low-speed single-layer polishing, laser polishing movement tracks and polishing parameters of the corresponding steps are drawn, medium-high frequency and high-frequency errors of the surface of the fused quartz element subjected to laser polishing are greatly reduced, the machined surface almost has no surface knife lines, and the surface quality is improved. And the far-field light modulation and near-field light field enhancement effects are effectively reduced.

The invention relates to the technical field of composite material damage evaluation and performance prediction, and discloses a thermal-mechanical-chemical-electromagnetic coupling-based integrated calculation method for ablation damage and electromagnetic wave transmission performance of a quartz fiber reinforced composite material under laser irradiation. The method comprises the following steps: acquiring verification data through a laser ablation experiment and an electromagnetic wave transmission test, establishing a laser damage numerical model of the quartz fiber reinforced composite material, and correcting a simulation calculation result by using the verification data; secondly, extracting features in a simulation calculation result, performing electromagnetic wave-transparent numerical calculation based on an established electromagnetic wave-transparent performance numerical model, and verifying and correcting through experimental data again; and finally, a verified integrated calculation method is formed. According to the method, organic coupling and integrated prediction from physical and chemical damage to electromagnetic performance degradation are realized, the problems of model separation, excessive geometric simplification, dependence on high-cost experiments and the like in the prior art are solved, and the prediction precision, efficiency and engineering applicability are remarkably improved.

The invention belongs to the field of laser damage resistance evaluation methods, and relates to a method for evaluating laser damage characteristics of a crystal based on photo-thermal weak absorption. The method for evaluating the laser damage characteristic of the crystal based on the weak photo-thermal absorption comprises the following steps: firstly, carrying out nondestructive testing on the weak photo-thermal absorption on a to-be-detected crystal to obtain a weak absorption rate; and evaluating the laser damage resistance of the to-be-tested crystal according to an Exponential-Chapman function relationship by using the obtained weak absorptivity. The Exponential-Chapman function relationship is as follows: F = a (1-e-b alpha) c, a, b and c are all fitting coefficients, alpha is the weak absorption rate, and F is the energy density.

The invention discloses a metal halide nonlinear optical crystal and a preparation method thereof, and relates to a nonlinear optical crystal and synthesis preparation thereof. The invention aims to solve the technical problem that the existing method is difficult to synthesize the metal halide of the mixed anions. The chemical formula of the metal halide nonlinear optical crystal is Rb2CdCl2I2, the structure of the nonlinear optical crystal does not have a symmetric center, the nonlinear optical crystal belongs to an orthorhombic system, the space group is I4mm, and the cell parameters are that a is equal to 5.31210 (10), b is equal to 5.31210 (10), c is equal to 17.7062 (10) and Z is equal to 2. The crystal is prepared by using a solution volatilization spontaneous crystallization method at 33-37 DEG C, has the advantages of low growth temperature, high crystal purity, good crystal quality, broad band gap of 3.70 eV, high laser damage threshold of 19 * AgGaS2, and ultra-wide light transmission range of 0.35-103.2 [mu] m, and can be used in the field of infrared laser.

The application relates to the technical field of continuous laser optical film, in particular to a low-heat-effect laser film and a preparation method thereof. The method comprises the following steps: designing a film system according to laser wavelengths and optical performance and simulating and optimizing; precisely polishing a substrate, ultrasonic cleaning and activating; alternately preparing high and low refractive index functional layers and interface modification layers by physical vapor deposition and atomic layer deposition, setting the interface modification layers between the adjacent high and low refractive index functional layers, forming a periodic stacking structure; and annealing treatment under an inert atmosphere at 150-300 DEG C to obtain a finished product. The method has the advantages that: phonon bridging and interface passivation are realized through nano-Al2O3 interface modification, interface thermal resistance is significantly reduced, heat accumulation and thermal lens effect are inhibited, and the laser damage threshold is improved; the process is controllable, the film layer is dense and uniform, and the method is suitable for antireflection, high-reflection or light-splitting devices of high-power continuous laser systems.