298 results about "Laser damage" patented technology

The embodiment of the invention provides a laser control method and device, electronic equipment and a laser. The method comprises the following steps: determining a target pump source temperature corresponding to a pump source in the laser, wherein the target pump source temperature is the pump source temperature when the pump source in the laser can operate according to a preset use condition in the operation process of the laser; determining target cooling parameter information adopted during operation of the laser based on the target pump source temperature, wherein the target cooling parameter information is used for indicating circulating cooling liquid temperature and / or circulating cooling liquid flow required for cooling the laser to enable a pump source in the laser to reach the target pump source temperature; and based on the target cooling parameter information, controlling a water cooling machine associated with a laser to supply circulating cooling liquid. According to the scheme, the laser can be protected, and laser damage or power reduction caused by pump burning can be reduced.

The invention belongs to the technical field of optical thin films, and particularly relates to an ultraviolet broadband low-reflection thin film and a preparation method thereof. The ultraviolet broadband low-reflection film provided by the invention comprises a low-refractive-index material and a high-refractive-index material which are alternately stacked, the low-refractive-index material comprises one or two of SiO2, Al2O3 and MgF2, and the high-refractive-index material is HfO2. According to the preparation method, proper low-refractive-index materials and high-refractive-index materials are selected, then film system design is carried out on the ultraviolet broadband low-reflection film through film system design software, plating is carried out on the substrate according to the film system design result, and the ultraviolet broadband low-reflection film with the ultraviolet band being 10-400 nm and the average reflectivity being smaller than 0.5% is successfully prepared. And the preparation method is simple and easy to implement, the generation probability of impurities and defects of the film is reduced, and then the mechanical property and the laser damage resistance of the film are improved.

The invention discloses acousto-optic chalcogenide glass with a high laser damage threshold, the chemical composition formula of the acousto-optic chalcogenide glass is GexSySez, x, y and z respectively represent the mole fractions of Ge, S and Se, x = 10-30, y = 5-40, z = 40-70, x + y + z = 100, and the microscopic network structure of the acousto-optic chalcogenide glass contains a [GeSe4] tetrahedron, a [GeSSe3] tetrahedron, a [GeS2Se2] tetrahedron, a [GeS3Se] tetrahedron, a [GeS4] tetrahedron and a Se ring. The acousto-optic chalcogenide glass provided by the invention has a relatively high laser damage threshold Fth (9.72-15.58 J / cm < 2 > at1550 / 20ns / 5kHz), a relatively low thermo-optic coefficient dn / dT and good acousto-optic characteristics and mechanical properties, is high in near-infrared band transmittance, and has a relatively high laser damage threshold while ensuring a high acousto-optic quality factor. The material can be used as a material basis for developing high-performance and high-stability infrared acousto-optic modulation devices.

The invention belongs to the technical field of photoelectric countermeasure, and particularly relates to a CMOS detector damage system based on time-domain composite pulse laser, which comprises a time-domain composite pulse laser generation module, a light beam transmission and focusing module, a target damage monitoring module, a parameter optimization control module and a detector to be damaged. The time domain composite pulse laser generating module comprises a short pulse laser, a long pulse laser, a pulse synchronous controller, a power adjusting unit, a power supply module and a cooling device, and the power adjusting unit is electrically connected with the short pulse laser and the long pulse laser; and the power supply module is electrically connected with the long pulse laser, the short pulse laser and the cooling device. According to the method, energy loss generated by plasmas in a traditional laser damage method is avoided, the damage efficiency is remarkably improved, efficient transmission and concentration of energy in the multilayer structure are achieved through the synergistic effect of long pulses and short pulses, all layers of materials synchronously lose efficacy in a short time, and the damage consistency of the whole multilayer structure is ensured.

The invention relates to the technical field of optical films with high damage thresholds, in particular to a tantalum oxide film with a high laser damage threshold under near-infrared long waves and a preparation method thereof, and the preparation method comprises the following steps: cleaning a substrate material by using a strong oxidation inorganic solvent, cleaning by using an organic solvent after cleaning by using deionized water, drying by blowing nitrogen, and drying to obtain the tantalum oxide film with the high laser damage threshold under near-infrared long waves. A clean substrate is obtained; depositing tantalum oxide on a clean substrate to obtain a tantalum oxide deposited substrate; and carrying out rapid annealing on the substrate deposited with tantalum oxide to obtain a substrate plated with tantalum oxide. According to the tantalum oxide thin film with the high laser damage threshold value under the near-infrared long wave and the preparation method of the tantalum oxide thin film, the laser damage threshold value of the tantalum oxide thin film at the near-infrared long wave is effectively improved through rapid annealing, the laser damage threshold value is improved by about 190% compared with an unannealed film layer, and the preparation time is greatly shortened.

The invention discloses Ge-Sn-Se-S acousto-optic chalcogenide glass, the chemical composition formula of the Ge-Sn-Se-S acousto-optic chalcogenide glass is Ge20SnxSe80-x-ySy, x and y respectively represent molar fractions of Sn and S, x is equal to 5-12.5, y is equal to 0-25, and a basic network unit of a glass frame of the Ge-Sn-Se acousto-optic chalcogenide glass is of a stable tetrahedral structure with Ge or Sn as the center. The acousto-optic chalcogenide glass is large in composition regulation and control range, easy to form, non-toxic, environment-friendly, green and quaternary chalcogenide glass system, high in linearity and refractive index and high in acousto-optic performance, the acousto-optic quality factor M2 under the wavelength of 1550 nm is 211.8 * 10 <-18 > s < 3 > / g to 348.9 * 10 <-18 > s < 3 > / g, the ultrasonic attenuation alpha under the ultrasonic frequency of 10 MHz is 0.72 dB / cm to 4.89 dB / cm, the laser damage threshold value is 2.94 J / cm < 2 > to 15.54 J / cm < 2 >, and the acousto-optic chalcogenide glass can be used for preparing the acousto-optic chalcogenide glass. The material has the potential of being applied to acousto-optic devices for high-power laser modulation, and can be widely applied to the acousto-optic field as an acousto-optic medium.

The invention discloses a multilayer optical film, a preparation method thereof and an imaging device. The preparation method comprises the following steps: providing an optical glass substrate, depositing an anti-reflection layer on the optical glass substrate, carrying out pattern design on the anti-reflection layer by using a beam splitting film design algorithm, and transferring a designed beam splitting pattern to the anti-reflection layer; depositing a high-damage-threshold protection layer on the anti-reflection layer, depositing a thermal management layer on the high-damage-threshold protection layer, depositing a reflection layer on the thermal management layer in an evaporation mode, forming a multi-layer film structure, carrying out annealing treatment on the formed multi-layer film structure, and setting the annealing condition as a preset temperature so as to improve the interface bonding force between the multi-layer film structure. Obtaining a multi-layer optical film; through the optimal design of the whole preparation process, the laser damage resistance is considered, the heat management layer provides heat stability, and the reflecting layer improves the efficiency of an optical system, so that the multi-layer optical film with high performance and multiple functions is manufactured, and the multi-layer optical film is suitable for high requirements of a laser display system.

A system for ensuring the integrity of the enclosure of a wireless power transmitter. The enclosure of the transmitter comprises a window in order to allow a high-power beam to exit the transmitter. The window is equipped with an area which reflects at least a portion of the beam, and directs the reflected beam onto a detector. Thus the system can ascertain whether the window is undamaged, since if the detector is receiving a satisfactory portion of the beam, then it is indicative of an undamaged window. This advantageously prevents dangerous beam generated damage which may be caused if the exit window of the transmitter is damaged. The laser beam is preferably circularly polarized before exiting the transmitter to prevent dangerous laser damage caused by the reflections of the maximum of the P or S polarization components, which may occur with linearly polarized beams.

The invention relates to the technical field of optics, and discloses an integrated system for monitoring a laser damage threshold so as to be compatible with two different damage mechanisms of continuous laser and pulse laser. The system includes: a focus lens driven to displace on a linear displacement stage in an optical axis direction; the first diaphragm is positioned between the sample displacement table and the focusing lens and forms an included angle with the optical axis; the light spot quality analyzer is positioned in the reflection direction of the first diaphragm; the optical path of the first diaphragm transmitted to the tested sample is equal to the optical path of the first diaphragm reflected to the light spot quality analyzer; the main controller is used for judging whether the detected sample is damaged or not based on data of the photoelectric detector in the process that the focusing lens displaces from large to small according to the light spot size of the detected sample after the output light beam of the light source is stable; and according to the stable value recorded by the power meter or the energy meter and the light spot area of the light spot quality analyzer at the damage occurrence moment, the two types of laser damage thresholds of the detected sample are determined in sequence.

The invention discloses a reflective all-dielectric polarization beam-combining grating suitable for any wave band. The reflective all-dielectric polarization beam-combining grating is composed of a grating etching layer, a phase matching layer, a periodic film system and a grating substrate in sequence from top to bottom. The invention has the characteristics of easy preparation, wide band and high diffraction efficiency, can effectively solve the problems of low PBS anti-laser damage threshold and low synthesis efficiency in the current polarization beam combination technology, and provides solid component support for the realization of the larger array scale and higher power laser synthesis technology in the future.

The invention discloses an HBC structure and a preparation method, and belongs to a preparation method in the technical field of batteries, and the technical scheme is as follows: carrying out alkali texturing treatment on the front and back surfaces of an N-type silicon wafer; a plate-type ALD mode is adopted for deposition treatment; forming a silicon nitride passivation layer structure on the aluminum oxide passivation layer; polishing treatment and deposition treatment; carrying out silicon nitride film removal treatment, and cleaning the laser damage layer after the film removal treatment; carrying out intrinsic silicon deposition treatment by adopting a CVD (chemical vapor deposition) mode; cleaning the intrinsic silicon and the doped intrinsic silicon layer above the N-region silicon nitride layer through an alkali washing tank; depositing intrinsic silicon and phosphorus-doped intrinsic silicon; removing intrinsic silicon and phosphorus-doped intrinsic silicon, removing the mask layer structure by adopting an ink remover, and depositing a transparent oxide layer TCO; tCO separation and electrode preparation are carried out on the GAP area of the N-type silicon wafer; according to the HBC structure and the preparation method provided by the invention, the conversion efficiency is improved, chemical tank cleaning is omitted, the equipment cost is reduced, and the productivity is greatly improved.

The invention provides a dichroscope optical thin film and a plating method thereof, the dichroscope optical thin film is made of three thin film materials, SiO2 with excellent laser resistance is selected as a low-refractive-index material, and Ta2O5 with very high refractive index and metal Hf with low deep ultraviolet absorption are selected as a high-refractive-index material. A Ta2O5-SiO2 film stack is adopted on the inner side of the whole film layer structure, namely the part with small reflection and absorption, and the requirement for high reflectivity is met through a small number of film layers by utilizing the advantage of large refractive index ratio of the Ta2O5-SiO2 film stack; the Hf-SiO2 membrane stack is superposed on the outermost part of the Ta2O5-SiO2 membrane stack, so that the reflectivity of a deep ultraviolet band can reach the standard, and a half-wave protection effect for improving the laser damage capability of Ta2O5-SiO2 is also achieved.

To provide improved laser-assisted methods and devices for parting or removing relatively thin layers of crystalline material from a substrate, such as a boule or a wafer.SOLUTION: A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in a substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analysis. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position.SELECTED DRAWING: Figure 49A

The invention provides a high-energy laser damaged material surface temperature monitoring system and method.The high-energy laser damaged material surface temperature monitoring system comprises a high-energy laser light source, a homogenizing optical fiber beam expanding system, a material sample fixing system and a material surface temperature monitoring system, and laser generated by the high-energy laser light source is output after being homogenized and expanded by the homogenizing optical fiber beam expanding system; the output homogenized high-energy laser acts on an irradiation target material sample after beam expansion, the material surface temperature monitoring system comprises a high-precision target acquisition system, a binocular vision imaging system and a multispectral wavelength temperature measurement system, and the target acquisition system is used for acquiring infrared heat radiation on the surface of a laser irradiation material; the binocular vision imaging system is used for realizing three-dimensional thermal imaging of the laser irradiation target material sample piece according to the collected infrared thermal radiation, and the multispectral wavelength temperature measurement system is used for realizing three-dimensional temperature measurement of the laser irradiation target material sample piece according to the three-dimensional thermal imaging. By applying the technical scheme of the invention, the technical problem that three-dimensional temperature monitoring is difficult to realize in the prior art is solved.

The invention relates to a preparation method of a porous full SiO2 laser reflection film, which comprises the following steps: firstly, alternately depositing SiO2 film layers and SiO2-Al2O3 mixture film layers on a substrate to form a mixture multilayer film; then, etching the prepared mixture multilayer film by using an acid solution to form a porous full SiO2 laser reflection film; and finally, cleaning the porous full SiO2 laser reflection film and naturally airing the porous full SiO2 laser reflection film. The high-refractive-index material layer in the porous full SiO2 laser reflection film prepared by the method is the SiO2 film layer, and the low-refractive-index material layer is the porous SiO2 film layer formed by etching the SiO2-Al2O3 mixture film layer by the acid solution, so that the problem of film layer cracking of the porous full SiO2 laser reflection film can be avoided, the absorption of the film can be greatly reduced, the laser damage threshold of the film can be improved, and the service life of the film can be prolonged. The method has the characteristics of simplicity in operation, low cost and wide application range, and can be used for preparing different types and different sizes of laser films such as light splitting films and antireflection films.

The invention belongs to the technical field of 3D printing, and particularly relates to a continuous pulse mixed type patterning laser powder bed light path system and method.Laser powder is preheated to be close to a melting point but not molten through set continuous-period light emitting, the preheated laser powder is completely molten through pulse-period light emitting, and in other words, the continuous pulse mixed type patterning laser powder bed light path system and method are obtained; continuous light is only used for preheating powder for a short time, so that the powder is close to a melting point but not molten; then peak energy is rapidly provided through microsecond pulsed light, powder melting is completed instantly, in this way, the effective heating time is shortened, the heat radiation range of heating is controlled, the heating time of a system is far shorter than the heating time of traditional continuous light, melting and solidification are completed when heat is not diffused out of a preset pattern in time, and the production efficiency is greatly improved. Therefore, the fusion area is limited within the pattern range, the subsequent part forming precision is improved, and laser loss caused by too high peak power due to short time is reduced through pulse light emitting and continuous light emitting.

The invention relates to a solar cell preparation method comprising the steps that a first conductive type substrate is provided, and the front side of the substrate comprises a second conductive type diffusion layer and a first protection layer which are sequentially stacked in the first direction away from the substrate; the back surface of the substrate comprises a gate structure and a sacrificial layer covering the gate structure; adopting etching laser to form an initial groove recessed towards the substrate in the gate structure; scanning the initial groove by using a target laser beam, then scanning the initial groove by using spraying water vapor, and physically splitting the substrate into a fragmented battery; processing the split cross section of the fragmented battery by adopting a target alkali solution, and simultaneously removing a laser damage layer and a sacrificial layer to obtain a target cross section with target flatness; and forming a dielectric layer at least covering the gate structure and the target section by adopting a target deposition process, wherein the dielectric layer has a target thickness. At least the flatness of the section of the solar cell can be improved, and the carrier transmission efficiency is improved.

The invention relates to a coated high-laser-damage-threshold high-reflectivity laser optical element and a preparation method thereof.The preparation method of the coated high-laser-damage-threshold high-reflectivity laser optical element comprises the following steps that (1) a substrate is subjected to ultrasonic cleaning, then Ar plasma generated by an anode ion source is adopted for cleaning the substrate, and a pre-cleaned substrate is obtained; (2) alternately carrying out high-refraction layer coating and low-refraction layer coating on the surface of the pre-cleaned substrate obtained in the step (1) to obtain a coated substrate; and coating a protective layer on the surface of the obtained coated substrate to obtain the coated high-laser-damage-threshold high-reflectivity laser optical element. According to the method, before high-refraction layer coating and low-refraction layer coating are carried out, the Ar plasma generated by the anode ion source is adopted to clean the substrate, and the laser damage threshold value of the high-reflectivity laser optical element composed of the thin film and the substrate is remarkably increased.

The present invention discloses an additive manufacturing method for a laser window with a micro-nano structure and a laser window. The steps include: 1) ultrasonically cleaning the polished quartz glass with a chemical reagent; (2) self-assembling polystyrene microspheres using a micro-injection pump and transferring them onto the ultrasonically cleaned quartz glass; (3) reducing the diameter of the polystyrene microspheres using an ion beam assisted coating technique and then coating a silica material thereon; (4) cleaning the quartz substrate with a chemical reagent to wash away the polystyrene microspheres with a part of silica; (5) performing secondary ion beam assisted coating on the cleaned quartz substrate. The laser window with a micro-nano structure prepared by this method has a high transmittance, a wide anti-reflection band, and strong laser damage resistance.

The invention discloses a solar cell, a manufacturing method thereof and a photovoltaic module, relates to the technical field of photovoltaics, and is used for reducing the frequency of reciprocating motion of laser spots in a patterning treatment process, reducing laser damage, facilitating improvement of the conversion efficiency of the solar cell and improving the productivity of patterning treatment. The solar cell includes a semiconductor substrate and a first doped semiconductor layer. The first doped semiconductor layer is disposed on a local region of the first surface. The first doped semiconductor layer comprises a plurality of first strip-shaped regions which extend along the first direction and are distributed at intervals along the second direction. The first doped semiconductor layer includes a first boundary extending in a first direction and a second boundary extending in a second direction. The first boundary is provided with a plurality of first protruding units which fluctuate in the second direction and are sequentially distributed in the first direction, and the second boundary is provided with a plurality of second protruding units which fluctuate in the first direction and are sequentially distributed in the second direction. The width of the first protruding unit is smaller than that of the second protruding unit.

The invention discloses a method for preparing a block alpha-HgS nonlinear optical crystal through chemical vapor transport cyclic heat treatment and application of the block alpha-HgS nonlinear optical crystal. The preparation method comprises the following steps: by taking HgS powder as a material source, carrying out chemical vapor transport cycle heat treatment for one-time growth to obtain alpha-HgS crystals; and recrystallizing the alpha-HgS crystal through chemical vapor transport cycle heat treatment, and carrying out secondary growth to prepare the alpha-HgS single crystal. According to the invention, cyclic heat treatment is carried out by adopting a secondary growth chemical vapor transport method, millimeter-scale alpha-HgS red crystal and beta-HgS black crystal are successfully grown, reversible phase change exists between the two crystals, and reversible transformation from black beta-HgS to red alpha-HgS can be promoted through temperature change in a mass transfer process by temperature control. The alpha-HgS single crystal has excellent nonlinear optical properties, can be used for frequency doubling crystals in a near-infrared band, and shows excellent laser damage resistance.

The invention relates to a device and method for testing a deep ultraviolet laser damage threshold of an element, and the device comprises a first laser module which is set to emit deep ultraviolet laser; the second laser module is set to emit ultrashort pulse laser with the same light spot size as that of the first laser module; the beam combining module is arranged to enable the laser emitted by the first laser module and the laser emitted by the second laser module to be coaxial and emit the modulated laser to a test element; the detection module comprises a first detection unit and a second detection unit which are used for detecting light beam energy, the first detection unit is arranged on a light path of the beam combining module and the test element, and the second detection unit is arranged in a light path penetrating out of the test element; and the control module is respectively connected with the first laser module and the second laser module and is used for controlling laser energy emitted by the first laser module and the second laser module and determining a deep ultraviolet laser damage threshold value of the test element according to information sent by the first detection unit and the second detection unit.

The invention discloses an all-silicon-based medium optical thin film and an all-fiber laser, and relates to the technical field of optical thin films, the number of layers of the optical thin film is 15, and the structure of the optical thin film is ML (HL) 6M; h represents high-refractive-index material silicon hydride or amorphous silicon, L represents low-refractive-index material silicon oxide, M represents high-refractive-index material silicon nitride, (HL) 6 is a 12-layer reflecting film stack, and ML and M respectively form anti-damage film stacks on two sides. On the premise that the thickness is reduced and the anti-laser-damage effect is improved, effective adaptation of a middle-infrared band pumping source is achieved, and the problems that an existing optical thin film is large in thickness, poor in anti-laser-damage effect and incapable of effectively adapting to the middle-infrared band pumping source are solved; and secondly, electric field distribution can be optimized, so that the optical thin film has more excellent spectral performance. And thirdly, the laser can be directly deposited on the optical fiber end face to serve as an endoscope, and the technical problem that an existing optical fiber laser is complex in structure is solved.

The invention provides a broadband infrared polarization device based on a mercurous halide crystal as well as a preparation method and application of the broadband infrared polarization device. The broadband infrared polarization device based on the mercurous halide crystal comprises a right-angle triangular prism based on the mercurous halide single crystal and a hexagonal prism based on the mercurous halide single crystal, and the mercurous halide is Hg < 2 > Cl2 or Hg < 2 > Br < 2 >. The mercurous halide crystal used in the invention is low in cost, can be prepared in a large size, and has stable physical and chemical properties; the transmission range of the infrared polarization device covers middle and far infrared bands, the transmission rate is high, and the birefringence is large; the polarization device based on the mercurous halide crystal can simultaneously realize polarization beam combination and beam splitting of visible-long wave infrared broadband, and has a high laser damage threshold, a high extinction ratio, high beam combination efficiency and high beam quality.

The invention discloses a preparation method of a perovskite crystalline silicon laminated solar cell and a bottom cell thereof, and belongs to the field of solar cells, a layer of annular graphite boat is placed on the second surface of a silicon wafer to cover the silicon wafer, a covered contact area and an uncovered non-contact area are formed, a front mask layer is deposited on the non-contact area, a cleaning process is matched, and the bottom cell of the perovskite crystalline silicon laminated solar cell is obtained. When the second surface of the silicon wafer is connected with the transparent conductive layer, the second surface of the silicon wafer is connected with the phosphorus-doped polycrystalline silicon layer of the bottom cell through the contact region and is connected with the passivation layer of the bottom cell through the non-contact region. The problem that electrons or holes are difficult to extract due to the fact that a plurality of small holes are discontinuous is solved, the transparent conducting layer is not likely to be separated, the contact area is larger, and interface contact is improved. By means of the method, H passivation caused by the passivation layer is reserved, laser damage caused by the laser opening is avoided, the opening voltage and filling of the perovskite crystalline silicon lamination can be improved, and the conversion efficiency of the perovskite crystalline silicon lamination can be improved.

The invention relates to the technical field of ultrafast laser, in particular to an ultraviolet laser damage inhibition method and device for a fused quartz optical element, and the method comprises the steps: obtaining oxy-18 modified DKDP crystals with oxy-18 isotope abundance higher than natural abundance; preparing the oxy-18 modified DKDP crystal into a wave plate matched with a preset ultraviolet laser wavelength; in an ultraviolet laser light path of a laser inertial confinement fusion device, a wave plate is arranged between a linear polarization state output end of ultraviolet laser and a fused quartz optical element; and enabling ultraviolet laser to sequentially pass through the linear polarization state output end and the wave plate to form circularly polarized light, and irradiating the circularly polarized light to the fused quartz optical element. The invention aims to realize the small-scale self-focusing effect of actively inhibiting fused quartz and solve the technical problem that a traditional material cannot be used as a large-aperture wave plate due to over-high transverse stimulated Raman scattering.

The present invention belongs to the technical field of laser damage measurement, and relates to a real-time multi-angle damage measurement system and method for an optoelectronic imaging detector. The measurement system includes: a laser emission unit, a first incident unit, a second incident unit, a detection light source, a measurement unit, and a controller. The laser emission unit is used to emit a laser beam with adjustable energy and type. The laser beam irradiates the same preset area on the optoelectronic imaging detector along the optical path constructed by the first incident unit and along the optical path constructed by the second incident unit, and the energy of the laser beam is equal. The detection light source enables the optoelectronic imaging detector to be controllably in a light-illuminated working condition or a non-light-illuminated working condition. The measurement unit is used to measure the damage image output by the optoelectronic imaging detector, the energy distribution characteristics of the laser spot, and the surface damage morphology image of the optoelectronic imaging detector. The controller receives the images output by the measurement unit and can issue four control commands. The present invention can achieve damage measurement under the action of multi-angle co-irradiation of the laser.

The invention provides a barium metaborate composite structure, a preparation method thereof and an optical device. The barium metaborate composite structure comprises a barium metaborate substrate and an anti-reflection layer or a composite anti-reflection structure arranged on one side surface or two side surfaces of the barium metaborate substrate; the composite anti-reflection structure comprises a first film layer, a second film layer and a third film layer which are stacked in the direction away from the barium metaborate substrate, and the refractive index of the second film layer at the wavelength of 266nm is larger than that of the first film layer and that of the third film layer; the material of the anti-reflection layer, the material of the first film layer and the material of the third film layer respectively and independently comprise metal fluoride, and the refractive index of the metal fluoride at the wavelength of 266 nm is smaller than 1.45. According to the barium metaborate composite structure, the metal fluoride material with the specific refractive index is arranged on the surface of the barium metaborate substrate to serve as the anti-reflection material, and the laser damage resistance threshold value in the ultraviolet 266nm wave band is effectively matched and improved.

This invention discloses a method for preparing a high-performance SiO2 antireflection film, comprising: preparing sol A and sol B using a simple and efficient sol-gel method; performing plasma cleaning on the substrate; and performing alternating deposition of the two sols multiple times using a dip-coating method to obtain a high-performance multilayer SiO2 antireflection film with high transmittance, high laser damage threshold, and good environmental stability in the wavelength range of 1000nm to 1100nm. The high-performance multilayer SiO2 antireflection film has eight layers. Sol A is prepared using an ammonia-catalyzed sol, which has high porosity, resulting in high transmittance of the deposited film. Sol B is prepared using a hexamethyldisilazane-modified sol. The surface layer deposited with hexamethyldisilazane-modified sol introduces a large number of nonpolar hydroxyl groups on the film surface, effectively preventing water vapor and organic pollutants from entering the film pores, thereby improving the film's environmental stability, laser damage resistance, and mechanical strength.

The invention relates to a protective rubber, a preparation method thereof and an application of the protective rubber in a battery. The protective rubber is prepared from the following raw materials in parts by mass: 100 parts of silicon rubber, 1.5-1.8 parts of a vulcanizing agent, 2-4 parts of a structure control agent, 30-35 parts of a heat conduction agent, 50-60 parts of a lubricant, 5-10 parts of a surfactant and 3-5 parts of ferrous oxide. The preparation method of the protective rubber comprises the following steps: S1, uniformly mixing a vulcanizing agent with part of silicone rubber to obtain a vulcanizing agent master batch; carrying out primary mixing on the residual silicone rubber, a structure control agent, a surfactant and ferrous oxide, then adding a heat conducting agent and a lubricant, carrying out secondary mixing, filtering to remove impurities, and calendering to obtain a rubber sheet; and S2, carrying out third mixing on the vulcanizing agent master batch and the rubber sheet, and carrying out calendering treatment to obtain the protective rubber. The protective rubber structure can bear and is high in laser damage resistance, the protective rubber structure is arranged on the periphery of the opening end of the battery shell, the influence on the performance of a battery cell due to the fact that laser is missed to be welded into the battery in the top cover welding process can be effectively avoided, and the yield of the battery is improved.