232 results about "Laser damage" patented technology

The embodiment of the invention provides a laser control method and device, electronic equipment and a laser. The method comprises the following steps: determining a target pump source temperature corresponding to a pump source in the laser, wherein the target pump source temperature is the pump source temperature when the pump source in the laser can operate according to a preset use condition in the operation process of the laser; determining target cooling parameter information adopted during operation of the laser based on the target pump source temperature, wherein the target cooling parameter information is used for indicating circulating cooling liquid temperature and / or circulating cooling liquid flow required for cooling the laser to enable a pump source in the laser to reach the target pump source temperature; and based on the target cooling parameter information, controlling a water cooling machine associated with a laser to supply circulating cooling liquid. According to the scheme, the laser can be protected, and laser damage or power reduction caused by pump burning can be reduced.

The invention belongs to the technical field of optical thin films, and particularly relates to an ultraviolet broadband low-reflection thin film and a preparation method thereof. The ultraviolet broadband low-reflection film provided by the invention comprises a low-refractive-index material and a high-refractive-index material which are alternately stacked, the low-refractive-index material comprises one or two of SiO2, Al2O3 and MgF2, and the high-refractive-index material is HfO2. According to the preparation method, proper low-refractive-index materials and high-refractive-index materials are selected, then film system design is carried out on the ultraviolet broadband low-reflection film through film system design software, plating is carried out on the substrate according to the film system design result, and the ultraviolet broadband low-reflection film with the ultraviolet band being 10-400 nm and the average reflectivity being smaller than 0.5% is successfully prepared. And the preparation method is simple and easy to implement, the generation probability of impurities and defects of the film is reduced, and then the mechanical property and the laser damage resistance of the film are improved.

The invention discloses acousto-optic chalcogenide glass with a high laser damage threshold, the chemical composition formula of the acousto-optic chalcogenide glass is GexSySez, x, y and z respectively represent the mole fractions of Ge, S and Se, x = 10-30, y = 5-40, z = 40-70, x + y + z = 100, and the microscopic network structure of the acousto-optic chalcogenide glass contains a [GeSe4] tetrahedron, a [GeSSe3] tetrahedron, a [GeS2Se2] tetrahedron, a [GeS3Se] tetrahedron, a [GeS4] tetrahedron and a Se ring. The acousto-optic chalcogenide glass provided by the invention has a relatively high laser damage threshold Fth (9.72-15.58 J / cm < 2 > at1550 / 20ns / 5kHz), a relatively low thermo-optic coefficient dn / dT and good acousto-optic characteristics and mechanical properties, is high in near-infrared band transmittance, and has a relatively high laser damage threshold while ensuring a high acousto-optic quality factor. The material can be used as a material basis for developing high-performance and high-stability infrared acousto-optic modulation devices.

The invention discloses Ge-Sn-Se-S acousto-optic chalcogenide glass, the chemical composition formula of the Ge-Sn-Se-S acousto-optic chalcogenide glass is Ge20SnxSe80-x-ySy, x and y respectively represent molar fractions of Sn and S, x is equal to 5-12.5, y is equal to 0-25, and a basic network unit of a glass frame of the Ge-Sn-Se acousto-optic chalcogenide glass is of a stable tetrahedral structure with Ge or Sn as the center. The acousto-optic chalcogenide glass is large in composition regulation and control range, easy to form, non-toxic, environment-friendly, green and quaternary chalcogenide glass system, high in linearity and refractive index and high in acousto-optic performance, the acousto-optic quality factor M2 under the wavelength of 1550 nm is 211.8 * 10 <-18 > s < 3 > / g to 348.9 * 10 <-18 > s < 3 > / g, the ultrasonic attenuation alpha under the ultrasonic frequency of 10 MHz is 0.72 dB / cm to 4.89 dB / cm, the laser damage threshold value is 2.94 J / cm < 2 > to 15.54 J / cm < 2 >, and the acousto-optic chalcogenide glass can be used for preparing the acousto-optic chalcogenide glass. The material has the potential of being applied to acousto-optic devices for high-power laser modulation, and can be widely applied to the acousto-optic field as an acousto-optic medium.

The invention relates to the technical field of optics, and discloses an integrated system for monitoring a laser damage threshold so as to be compatible with two different damage mechanisms of continuous laser and pulse laser. The system includes: a focus lens driven to displace on a linear displacement stage in an optical axis direction; the first diaphragm is positioned between the sample displacement table and the focusing lens and forms an included angle with the optical axis; the light spot quality analyzer is positioned in the reflection direction of the first diaphragm; the optical path of the first diaphragm transmitted to the tested sample is equal to the optical path of the first diaphragm reflected to the light spot quality analyzer; the main controller is used for judging whether the detected sample is damaged or not based on data of the photoelectric detector in the process that the focusing lens displaces from large to small according to the light spot size of the detected sample after the output light beam of the light source is stable; and according to the stable value recorded by the power meter or the energy meter and the light spot area of the light spot quality analyzer at the damage occurrence moment, the two types of laser damage thresholds of the detected sample are determined in sequence.

The invention discloses a reflective all-dielectric polarization beam-combining grating suitable for any wave band. The reflective all-dielectric polarization beam-combining grating is composed of a grating etching layer, a phase matching layer, a periodic film system and a grating substrate in sequence from top to bottom. The invention has the characteristics of easy preparation, wide band and high diffraction efficiency, can effectively solve the problems of low PBS anti-laser damage threshold and low synthesis efficiency in the current polarization beam combination technology, and provides solid component support for the realization of the larger array scale and higher power laser synthesis technology in the future.

The invention discloses an HBC structure and a preparation method, and belongs to a preparation method in the technical field of batteries, and the technical scheme is as follows: carrying out alkali texturing treatment on the front and back surfaces of an N-type silicon wafer; a plate-type ALD mode is adopted for deposition treatment; forming a silicon nitride passivation layer structure on the aluminum oxide passivation layer; polishing treatment and deposition treatment; carrying out silicon nitride film removal treatment, and cleaning the laser damage layer after the film removal treatment; carrying out intrinsic silicon deposition treatment by adopting a CVD (chemical vapor deposition) mode; cleaning the intrinsic silicon and the doped intrinsic silicon layer above the N-region silicon nitride layer through an alkali washing tank; depositing intrinsic silicon and phosphorus-doped intrinsic silicon; removing intrinsic silicon and phosphorus-doped intrinsic silicon, removing the mask layer structure by adopting an ink remover, and depositing a transparent oxide layer TCO; tCO separation and electrode preparation are carried out on the GAP area of the N-type silicon wafer; according to the HBC structure and the preparation method provided by the invention, the conversion efficiency is improved, chemical tank cleaning is omitted, the equipment cost is reduced, and the productivity is greatly improved.

The invention provides a high-energy laser damaged material surface temperature monitoring system and method.The high-energy laser damaged material surface temperature monitoring system comprises a high-energy laser light source, a homogenizing optical fiber beam expanding system, a material sample fixing system and a material surface temperature monitoring system, and laser generated by the high-energy laser light source is output after being homogenized and expanded by the homogenizing optical fiber beam expanding system; the output homogenized high-energy laser acts on an irradiation target material sample after beam expansion, the material surface temperature monitoring system comprises a high-precision target acquisition system, a binocular vision imaging system and a multispectral wavelength temperature measurement system, and the target acquisition system is used for acquiring infrared heat radiation on the surface of a laser irradiation material; the binocular vision imaging system is used for realizing three-dimensional thermal imaging of the laser irradiation target material sample piece according to the collected infrared thermal radiation, and the multispectral wavelength temperature measurement system is used for realizing three-dimensional temperature measurement of the laser irradiation target material sample piece according to the three-dimensional thermal imaging. By applying the technical scheme of the invention, the technical problem that three-dimensional temperature monitoring is difficult to realize in the prior art is solved.

The invention relates to a preparation method of a porous full SiO2 laser reflection film, which comprises the following steps: firstly, alternately depositing SiO2 film layers and SiO2-Al2O3 mixture film layers on a substrate to form a mixture multilayer film; then, etching the prepared mixture multilayer film by using an acid solution to form a porous full SiO2 laser reflection film; and finally, cleaning the porous full SiO2 laser reflection film and naturally airing the porous full SiO2 laser reflection film. The high-refractive-index material layer in the porous full SiO2 laser reflection film prepared by the method is the SiO2 film layer, and the low-refractive-index material layer is the porous SiO2 film layer formed by etching the SiO2-Al2O3 mixture film layer by the acid solution, so that the problem of film layer cracking of the porous full SiO2 laser reflection film can be avoided, the absorption of the film can be greatly reduced, the laser damage threshold of the film can be improved, and the service life of the film can be prolonged. The method has the characteristics of simplicity in operation, low cost and wide application range, and can be used for preparing different types and different sizes of laser films such as light splitting films and antireflection films.

The invention belongs to the technical field of 3D printing, and particularly relates to a continuous pulse mixed type patterning laser powder bed light path system and method.Laser powder is preheated to be close to a melting point but not molten through set continuous-period light emitting, the preheated laser powder is completely molten through pulse-period light emitting, and in other words, the continuous pulse mixed type patterning laser powder bed light path system and method are obtained; continuous light is only used for preheating powder for a short time, so that the powder is close to a melting point but not molten; then peak energy is rapidly provided through microsecond pulsed light, powder melting is completed instantly, in this way, the effective heating time is shortened, the heat radiation range of heating is controlled, the heating time of a system is far shorter than the heating time of traditional continuous light, melting and solidification are completed when heat is not diffused out of a preset pattern in time, and the production efficiency is greatly improved. Therefore, the fusion area is limited within the pattern range, the subsequent part forming precision is improved, and laser loss caused by too high peak power due to short time is reduced through pulse light emitting and continuous light emitting.

The invention discloses a solar cell, a manufacturing method thereof and a photovoltaic module, relates to the technical field of photovoltaics, and is used for reducing the frequency of reciprocating motion of laser spots in a patterning treatment process, reducing laser damage, facilitating improvement of the conversion efficiency of the solar cell and improving the productivity of patterning treatment. The solar cell includes a semiconductor substrate and a first doped semiconductor layer. The first doped semiconductor layer is disposed on a local region of the first surface. The first doped semiconductor layer comprises a plurality of first strip-shaped regions which extend along the first direction and are distributed at intervals along the second direction. The first doped semiconductor layer includes a first boundary extending in a first direction and a second boundary extending in a second direction. The first boundary is provided with a plurality of first protruding units which fluctuate in the second direction and are sequentially distributed in the first direction, and the second boundary is provided with a plurality of second protruding units which fluctuate in the first direction and are sequentially distributed in the second direction. The width of the first protruding unit is smaller than that of the second protruding unit.

The invention relates to a device and method for testing a deep ultraviolet laser damage threshold of an element, and the device comprises a first laser module which is set to emit deep ultraviolet laser; the second laser module is set to emit ultrashort pulse laser with the same light spot size as that of the first laser module; the beam combining module is arranged to enable the laser emitted by the first laser module and the laser emitted by the second laser module to be coaxial and emit the modulated laser to a test element; the detection module comprises a first detection unit and a second detection unit which are used for detecting light beam energy, the first detection unit is arranged on a light path of the beam combining module and the test element, and the second detection unit is arranged in a light path penetrating out of the test element; and the control module is respectively connected with the first laser module and the second laser module and is used for controlling laser energy emitted by the first laser module and the second laser module and determining a deep ultraviolet laser damage threshold value of the test element according to information sent by the first detection unit and the second detection unit.

The invention discloses an all-silicon-based medium optical thin film and an all-fiber laser, and relates to the technical field of optical thin films, the number of layers of the optical thin film is 15, and the structure of the optical thin film is ML (HL) 6M; h represents high-refractive-index material silicon hydride or amorphous silicon, L represents low-refractive-index material silicon oxide, M represents high-refractive-index material silicon nitride, (HL) 6 is a 12-layer reflecting film stack, and ML and M respectively form anti-damage film stacks on two sides. On the premise that the thickness is reduced and the anti-laser-damage effect is improved, effective adaptation of a middle-infrared band pumping source is achieved, and the problems that an existing optical thin film is large in thickness, poor in anti-laser-damage effect and incapable of effectively adapting to the middle-infrared band pumping source are solved; and secondly, electric field distribution can be optimized, so that the optical thin film has more excellent spectral performance. And thirdly, the laser can be directly deposited on the optical fiber end face to serve as an endoscope, and the technical problem that an existing optical fiber laser is complex in structure is solved.

The invention discloses a preparation method of a perovskite crystalline silicon laminated solar cell and a bottom cell thereof, and belongs to the field of solar cells, a layer of annular graphite boat is placed on the second surface of a silicon wafer to cover the silicon wafer, a covered contact area and an uncovered non-contact area are formed, a front mask layer is deposited on the non-contact area, a cleaning process is matched, and the bottom cell of the perovskite crystalline silicon laminated solar cell is obtained. When the second surface of the silicon wafer is connected with the transparent conductive layer, the second surface of the silicon wafer is connected with the phosphorus-doped polycrystalline silicon layer of the bottom cell through the contact region and is connected with the passivation layer of the bottom cell through the non-contact region. The problem that electrons or holes are difficult to extract due to the fact that a plurality of small holes are discontinuous is solved, the transparent conducting layer is not likely to be separated, the contact area is larger, and interface contact is improved. By means of the method, H passivation caused by the passivation layer is reserved, laser damage caused by the laser opening is avoided, the opening voltage and filling of the perovskite crystalline silicon lamination can be improved, and the conversion efficiency of the perovskite crystalline silicon lamination can be improved.

The invention relates to the technical field of ultrafast laser, in particular to an ultraviolet laser damage inhibition method and device for a fused quartz optical element, and the method comprises the steps: obtaining oxy-18 modified DKDP crystals with oxy-18 isotope abundance higher than natural abundance; preparing the oxy-18 modified DKDP crystal into a wave plate matched with a preset ultraviolet laser wavelength; in an ultraviolet laser light path of a laser inertial confinement fusion device, a wave plate is arranged between a linear polarization state output end of ultraviolet laser and a fused quartz optical element; and enabling ultraviolet laser to sequentially pass through the linear polarization state output end and the wave plate to form circularly polarized light, and irradiating the circularly polarized light to the fused quartz optical element. The invention aims to realize the small-scale self-focusing effect of actively inhibiting fused quartz and solve the technical problem that a traditional material cannot be used as a large-aperture wave plate due to over-high transverse stimulated Raman scattering.

The present invention belongs to the technical field of laser damage measurement, and relates to a real-time multi-angle damage measurement system and method for an optoelectronic imaging detector. The measurement system includes: a laser emission unit, a first incident unit, a second incident unit, a detection light source, a measurement unit, and a controller. The laser emission unit is used to emit a laser beam with adjustable energy and type. The laser beam irradiates the same preset area on the optoelectronic imaging detector along the optical path constructed by the first incident unit and along the optical path constructed by the second incident unit, and the energy of the laser beam is equal. The detection light source enables the optoelectronic imaging detector to be controllably in a light-illuminated working condition or a non-light-illuminated working condition. The measurement unit is used to measure the damage image output by the optoelectronic imaging detector, the energy distribution characteristics of the laser spot, and the surface damage morphology image of the optoelectronic imaging detector. The controller receives the images output by the measurement unit and can issue four control commands. The present invention can achieve damage measurement under the action of multi-angle co-irradiation of the laser.

The invention provides a barium metaborate composite structure, a preparation method thereof and an optical device. The barium metaborate composite structure comprises a barium metaborate substrate and an anti-reflection layer or a composite anti-reflection structure arranged on one side surface or two side surfaces of the barium metaborate substrate; the composite anti-reflection structure comprises a first film layer, a second film layer and a third film layer which are stacked in the direction away from the barium metaborate substrate, and the refractive index of the second film layer at the wavelength of 266nm is larger than that of the first film layer and that of the third film layer; the material of the anti-reflection layer, the material of the first film layer and the material of the third film layer respectively and independently comprise metal fluoride, and the refractive index of the metal fluoride at the wavelength of 266 nm is smaller than 1.45. According to the barium metaborate composite structure, the metal fluoride material with the specific refractive index is arranged on the surface of the barium metaborate substrate to serve as the anti-reflection material, and the laser damage resistance threshold value in the ultraviolet 266nm wave band is effectively matched and improved.

This invention discloses a method for preparing a high-performance SiO2 antireflection film, comprising: preparing sol A and sol B using a simple and efficient sol-gel method; performing plasma cleaning on the substrate; and performing alternating deposition of the two sols multiple times using a dip-coating method to obtain a high-performance multilayer SiO2 antireflection film with high transmittance, high laser damage threshold, and good environmental stability in the wavelength range of 1000nm to 1100nm. The high-performance multilayer SiO2 antireflection film has eight layers. Sol A is prepared using an ammonia-catalyzed sol, which has high porosity, resulting in high transmittance of the deposited film. Sol B is prepared using a hexamethyldisilazane-modified sol. The surface layer deposited with hexamethyldisilazane-modified sol introduces a large number of nonpolar hydroxyl groups on the film surface, effectively preventing water vapor and organic pollutants from entering the film pores, thereby improving the film's environmental stability, laser damage resistance, and mechanical strength.

The invention relates to a protective rubber, a preparation method thereof and an application of the protective rubber in a battery. The protective rubber is prepared from the following raw materials in parts by mass: 100 parts of silicon rubber, 1.5-1.8 parts of a vulcanizing agent, 2-4 parts of a structure control agent, 30-35 parts of a heat conduction agent, 50-60 parts of a lubricant, 5-10 parts of a surfactant and 3-5 parts of ferrous oxide. The preparation method of the protective rubber comprises the following steps: S1, uniformly mixing a vulcanizing agent with part of silicone rubber to obtain a vulcanizing agent master batch; carrying out primary mixing on the residual silicone rubber, a structure control agent, a surfactant and ferrous oxide, then adding a heat conducting agent and a lubricant, carrying out secondary mixing, filtering to remove impurities, and calendering to obtain a rubber sheet; and S2, carrying out third mixing on the vulcanizing agent master batch and the rubber sheet, and carrying out calendering treatment to obtain the protective rubber. The protective rubber structure can bear and is high in laser damage resistance, the protective rubber structure is arranged on the periphery of the opening end of the battery shell, the influence on the performance of a battery cell due to the fact that laser is missed to be welded into the battery in the top cover welding process can be effectively avoided, and the yield of the battery is improved.

The application provides a low-laser-damage back contact heterojunction solar cell manufacturing method, which comprises the following steps: A, a first conductive type film layer is arranged on a part of a first main surface of a semiconductor substrate to form a first conductive region of the first conductive type, and the specific method of the step A is as follows: a1, a first conductive type film layer, a first insulating layer and a laser absorption sacrificial layer are sequentially formed on the first main surface of the semiconductor substrate; a2, the laser absorption sacrificial layer in a region other than the first conductive region is removed by laser etching; and a3, the first insulating layer and the first conductive type film layer not covered by the laser absorption sacrificial layer are removed by chemical etching to form the first conductive region with the insulating film layer attached to the surface. The application aims to provide a low-laser-damage back contact heterojunction solar cell manufacturing method, which can reduce laser damage, reduce the influence of thermal decay and improve photoelectric conversion efficiency.

The invention relates to the technical field of satellite protection, in particular to an anti-laser broadband efficient retroreflector for satellites, which comprises a metal substrate, a phase change alloy array, a retroreflection microstructure array and a multi-layer optical dielectric film, and is characterized in that the metal substrate is of a hollow box type structure consisting of an upper substrate, a lower substrate and side plates with grids; the phase change alloy array is arranged in the metal substrate and is composed of an Al-Si alloy phase change material; the retro-reflection microstructure array is arranged above the upper substrate, the bottom of the retro-reflection microstructure array is triangular, hexagonal or rectangular, and the top of the retro-reflection microstructure array is of a pointed cone structure composed of three inclined planes; and a plurality of layers of optical medium films are plated on the surface of the retroreflection microstructure array. The Al-Si alloy layer prepared through the substrate can absorb a large amount of heat through phase change, so that the laser damage threshold value and the protection performance are improved, and efficient retroreflection of incident laser is achieved.

The invention discloses a method and a device for determining a laser damage index of an optical fiber tunnel and electronic equipment. The method comprises the following steps: acquiring a plurality of working condition scenes corresponding to an optical fiber tunnel; determining laser temperature parameters respectively corresponding to the plurality of tunnel areas; determining transmission attenuation indexes respectively corresponding to the plurality of working condition scenes; determining a plurality of spatial distances respectively corresponding to the plurality of optical fiber devices; and according to the laser temperature parameters corresponding to the plurality of tunnel areas, the transmission attenuation indexes corresponding to the plurality of working condition scenes, and the plurality of spatial distances corresponding to the plurality of optical fiber devices, determining a laser damage index corresponding to the optical fiber tunnel. According to the method and the device, the technical problem that the laser damage index of the optical fiber tunnel is determined inaccurately when the laser damage index of the optical fiber tunnel is determined in related technologies is solved.

In an aspect, a process can include bonding a carrier substrate to a first major surface of a donor substrate; generating a laser damage zone within the donor substrate; bonding a processing substrate to a second major surface of the donor substrate, wherein the second major surface is opposite the first major surface; and separating (1) the processing substrate and a device portion of the donor substrate and (2) the carrier substrate and a remaining portion of the donor substrate from each other. In another aspect, an electronic device can include a device portion of a SiC substrate, wherein the device portion includes at least part of an electronic circuit element. A processing substrate can be bonded the device portion, wherein the processing substrate can withstand processing conditions when fabricating the electronic device.

The application relates to the technical field of fiber gratings, and discloses a preparation method of a large-area fiber grating and the fiber grating. The method is to make a glass tube with a refractive index close to that of a fiber coating adhere to the fiber under the action of high temperature by using the collapsing glass tube method, so that the femtosecond laser damage threshold of the fiber boundary is improved, the writing area of the fiber grating is increased, and even the modulation area introduced by the femtosecond laser can cross the two areas of the fiber and the glass tube, so that the fiber grating covering the whole cross section of the fiber is prepared. Meanwhile, the refractive index of the glass tube is close to that of the coating, so that the mode deformation and loss are not caused.

The invention provides a long-wave infrared laser reflector with a three-medium structure. The long-wave infrared laser reflector structurally comprises a substrate Sub, a transition layer B, a metal layer G, a medium film system C and an air layer A from bottom to top. The dielectric film system C is structurally characterized by being formed by alternately stacking one or more groups of materials with high, medium and low refractive indexes. The invention aims to realize high reflection of a long-wave infrared band. Through meticulous design, three kinds of materials with high, medium and low refractive indexes are reasonably distributed in the reflector. According to the strategy, the absorption of the reflector is effectively reduced by balancing the low absorption of the chalcogenide and the low refractive index of the fluoride, the temperature rise caused by heat absorption is remarkably reduced, and meanwhile, the reflectivity is improved. Therefore, the continuous laser damage threshold value of the reflecting mirror is greatly enhanced theoretically, and the reflecting mirror shows higher stability and tolerance when facing continuous laser irradiation.

The application provides a magnetic field enhanced coupling plasma processing device and method, which comprises a capacitively coupled plasma device and a racetrack magnetic pole device; the capacitively coupled plasma device comprises an upper anode plate and a lower cathode plate, a plasma working area is formed between the upper anode plate and the lower cathode plate, and an electric field is formed between the upper anode plate and the lower cathode plate; the racetrack magnetic pole device comprises a moving device and a racetrack magnetic pole installed on the moving device, the moving device drives the racetrack magnetic pole to move along a plane parallel to the lower cathode plate; the racetrack magnetic pole comprises adjacent permanent magnets with opposite magnetic poles, and the permanent magnets form an additional coupling magnetic field which restricts the bipolar diffusion motion of electrons in the electric field. The application modulates the density, distribution and directional drift of the multi-field coupled plasma, greatly improves the actual processing efficiency of difficult-to-process materials, makes the plasma rapid processing of medium-large aperture optical elements possible, and improves the laser damage resistance of the elements.

The present application relates to laser damage detection, in particular to a kind of laser damage automatic judging method based on computer vision, the laser radiation before image of the element to be measured is collected, and the image after laser radiation, and the image before laser radiation, the image after laser radiation are preprocessed;Determine the region of interest in the image before laser radiation, the image after laser radiation based on the possible damage location of the element to be measured, and adopt sliding window and move along the region of interest in the image before laser radiation, the image after laser radiation simultaneously;Similarity index between corresponding local window image in each sliding window is calculated based on similarity measurement model;Similarity index is input into classifier, and whether the element to be measured appears laser damage is judged according to the output result of classifier;The technical scheme provided by the present application can effectively overcome the defects that the prior art cannot accurately, efficiently judge whether optical element appears laser damage, and intuitively reflect laser damage detection result.

The present application relates to the technical field of solar cells, and discloses a solar cell and a preparation method therefor, and a photovoltaic module, used for solving the problem in the prior art of the photoelectric conversion efficiency of shingled solar cells being affected due to the passivation performance and other performance of shingled solar cells being affected by laser damage areas of the shingled solar cells. The solar cell comprises a first surface and a second surface opposite to each other, and a side surface connecting the first surface and the second surface. The side surface comprises at least one first area, the at least one first area comprising a plurality of fused silicon areas, and a first texture area between at least two fused silicon areas.

The application discloses a self-limiting pipe end welding interface laser rust removal device, and relates to the technical field of laser rust removal.The device comprises a main frame, a clamping mechanism, an axial limiting assembly and a laser rust removal execution mechanism;the bottom of the main frame is provided with a fixed arc-shaped plate matched with a steel pipe, and a limiting plate is arranged at one end of the axial limiting assembly to realize axial self-limiting;the clamping mechanism is matched with an adjustable bolt through flexible deformation of an arc-shaped clamping piece, so that the device is quickly clamped and fixed on the steel pipe.The middle part of the main frame is provided with an operation window opposite to the surface of the pipe end to be rusted;the laser rust removal execution mechanism is matched with an arc-shaped limiting rail through a sliding support, so that the laser gun is driven to move along the circumferential track of the surface of the pipe end to be rusted accurately, and the laser focal point is stable.The device has compact structure and high portability, can realize quick positioning and uniform rust removal of the surface of the pipe end of the steel pipe to be rusted, reduces the difficulty of manual operation on site, avoids laser damage to the steel pipe base body, and effectively improves the efficiency and quality of rust removal before welding.

The invention discloses an experimental device capable of measuring the imaging quality and laser damage threshold of an optical system, and relates to the technical field of optical systems, in the device, a first diaphragm and a second diaphragm are used for collimating a light path and limiting the size of light spots entering an attenuation imaging-energy detection system; the first diaphragm and the second diaphragm are cooperated with the reflector group to realize the adjustment of an optical path; the second diaphragm is used for limiting the size of a light spot incident to the dual-detection system; and the attenuation imaging-energy detection system obtains the energy and the imaging effect of the laser beam output by the second diaphragm. Through the cooperation of the diaphragm assembly and the reflector assembly, the dimension of light path adjustment is effectively expanded, and the light path is easier to adjust and collimate; the point spread function measurement of the optical system under different distances can be realized in a limited experimental site through the attenuation piece and the reflector assembly, and the test of the laser damage threshold of the optical system can be completed without changing the light path.