153results about How to "Increased Laser Damage Threshold" patented technology

This invention is a method of assembling precision optical or optomechanical components that provides first and second components having respective first and second polished contacting surfaces to be bonded; generates a hydrophilic surface on at least a portion of at least one of the first or second surfaces; rinses the hydrophilic portion with water or another suitable solvent; and contacts the hydrophilic portion of the first or second components with the respective contacting surfaces to be bonded, while maintaining alignment of the two components, to form a single structure

The invention discloses a device for generating vector light beam through an annular combination half wave plate. According to the invention, a plurality of half wave plates with different fast axis directions and in isosceles trapezoid form an annular combination half wave plate in an approximate circular ring shape in a seamless splicing way, so as to avoid the problem of sharply increased diffraction loss of a central zone due to a great amount of adopted fanshaped half wave plates and then generate the vector light beam with high purity; and when high-order vector light beam needs to be generated, the quantity of the half wave plates can be increased to ensure high purity of the light beam. Compared with the prior art, the device provided by the invention adopts the annular combination half wave plate formed by a plurality of trapezoidal half wave plates, so that the problem of sharply increased diffraction loss of the central zone due to increased plate does does not exist, and accordingly the high-order vector light beam can be ensured to be generated; an annular light beam converter formed by a first axial cone mirror and a second axial cone mirror which are plated with high-reflection gold films is adopted, so as to improve the reflectivity and damage threshold of laser; therefore, the device provided by the invention can be applicable to production of high-power vector light beam.

A preparation method for anti-reflective glass includes the steps of cleaning a silicate glass substrate, pre-treating the cleaned silicate glass substrate by means of laser, etching the pre-treated silicate glass substrate which is immersed into etching water liquor prior to cleaning, drying and the like, and obtaining the anti-reflective glass. The preparation method for the anti-reflective glass has the advantages that the technology is simple, anti-reflective effect is controllable, and glass surface subjected to laser pretreatment is not only quick and uniform in etched speed, but also capable of effectively increasing a laser induced damage threshold of the etched glass.

The present invention provides methods and systems for measuring optical power that require neither alterations to the optical fiber nor physical contact with the optical fiber, the system including an optical fiber configured to propagate an optical signal, wherein the optical fiber includes a core and at least a first cladding layer, wherein a portion of the optical signal scatters out of the optical fiber along a length of the optical fiber to form scattered fiber light; a detector system configured to receive the scattered fiber light along the length of the optical fiber and to output a detection signal based on the received scattered fiber light; and a processor configured to receive the detection signal and to determine a power value of the optical signal based on the received detection signal.

A metal dielectric film wideband pulse compressed grating used in 800nm center wavelength consists of a metal layer, a matching layer consisting of dielectric films and a grating etching layer which are sequentially arranged on a quartz substrate from the inside out and integrated together, and the outermost layer is SiO2. The rectangular grating has the period of 490-640nm, and the duty cycle of 0.2-0.4. The interlayer of the grating etching layer is a high-refractivity layer, the inner layer and the outer layer of the grating etching layer are low-refractivity layers SiO2; the outer layer of the matching layer is a high-refractivity layer, and the inner layer of the matching layer is a low-refractivity layer; and the thickness of the gold layer is larger than 50nm. By adopting the metal dielectric film wideband pulse compressed grating at the 700-909 nm band, the -1-level reflection and diffraction efficiencies of TE polarization are larger than 90 percent at the incidence angle of 53 DEG; and when the grating is at the 800nm incident wavelength, the -1-level reflection and diffraction efficiencies of TE polarization are larger than 90 percent at the incidence angle of 29-65 DEG. The metal dielectric film wideband pulse compressed grating can be used as a pulse compressed grating of a high-power ultrashort impulse laser system.

The invention discloses an infrared nonlinear optical crystal and a preparation method and application thereof. The infrared nonlinear optical crystal has a molecular formula shown as A18X21Y6M48, wherein A is Ba, Sr or Pb; X is Zn, Cd or Mn; Y is Ga, In or Al; and M is S, Se or Te. The crystal belongs to a trigonal crystal system, and the space group is R3. Crystal Ba18Zn21Ga6S48 is a type-I phase matching nonlinear optical material, the particle size is in a range of 150-210 mu m, the frequency multiplication intensity and the laser-induced damage threshold of the powder are respectively 0.5 time and 28 times of that of commercial material AgGaS2, others crystals have a same or similar crystal structure and optical and other properties, have important military and civil application prospects, and can be used for optoelectrionic countermeasures, resource probing, space anti missile, communication and the like.

The invention relates to a gain photon crystal optical fiber waveguide, which is composed of a core layer and a coating layer which surrounds the core layer. The inner coating layer of the optical fiber comprise solid microstructure point lattice which is formed by germanium-doped silica column, and forms outer bandgap of the gain optical fiber, the function thereof is that the multimode pump light can be strictly restricted in a second fiber core region which is provided with rare earth dopant ion, and improves the utilizing efficiency of the pump light; the second fiber core of the optical fiber is composed of the solid microstructure point lattice which is formed the rare earth ion silica column to form the inner bandgap of the gain optical fiber, the function thereof is that through the multimode pump light, the generated laser light can be strictly restricted in a first fiber core region which is formed by high pure silica glass. Adopting the solid gain photon crystal optical fiber can greatly improve the utilization efficiency of the pump light, improve beam quality of output laser light, enhance output power of the optical fiber laser, and reduce nonlinear effect of the high-power laser device.

The process of making Nd-Yb co-blended high silica laser glass includes the following steps: preparing porous glass; compounding mixed Nd-Yb ion solution; soaking the porous glass inside the mixed Nd-Yb ion solution for over 30 min; drying the porous glass in air at 200-800 deg.C; and sintering at 1100-1200 deg.C in a high temperature furnace to eliminate pores and to form dense transparent Nd-Yb co-blended high silica laser glass. Thus made Nd-Yb co-blended high silica laser glass has excellent physical performance, and can emit 950-1100 nm wide band light under the pump of 808 nm laser and realize xenon lamp pumped laser output.

The invention discloses a plating method for increasing the laser damage threshold of a high-reflectivity optical thin film. Along with continuous increasing of laser output power and energy, higher requirements on the reflectivity and the damage threshold of a high-reflectivity film of a laser endoscopy are expressed. Most enterprises and research institutes adopt an electron gun thermal evaporation method which has the disadvantage that: a plated film is relatively loose and has severe surface defects. The technical problem to be solved of the invention is to overcome the defects of the prior art and increase the laser damage threshold of the high-reflectivity film in the aspects of a film design structure and the internal quality of a deposited film. By the method, the laser damage threshold is greatly increased, the plated film is very dense, absorption is small, an operation method is simple, and a spectrum index is stable.

The invention discloses a deep ultraviolet optics wave aberration detection apparatus and method; the apparatus comprises a quasi-molecular laser (1), an energy controller (2), a plano-concave cylindrical lens (3), a plano-convex cylindrical lens (4), a beam splitter (5), an energy detector (6), a first plane reflector (7), a diffractive optical element (8), a Fourier lens (9), a first collimating objective (10), a first 1/4 wave plate (11), a first 1/2 wave plate (12), a second plane reflector (13), a first focusing objective (14), an orifice plate (15), a second collimating objective (16), a second 1/2 wave plate (17), a polarizing splitting prism (18), a second 1/4 wave plate (19), a second focusing objective (20), a deep ultraviolet optical system (21) to be detected, a spherical reflector (22), a first relay lens (23), a second relay lens (24) and a Shack-Hartmann wavefront sensor (25). The deep ultraviolet optics wave aberration detection apparatus and method provide high-speed high-precision detection of system wave aberrations in integrated assembly and adjustment of deep ultraviolet optics.

An optical infrared non-linear crytical material, ACdI3.xH2O where A=Rb and x=1, or A=Cs and X=0.25, and its preparing process are disclosed. The said inorganic material features that very great light transmission window in visual light and infrared region, greater second-order non-linear coefficient, and large size of monocrystal. It can be used for optical second-order non-linear material.

The invention discloses a broadband angle selection optical fiber and a preparation method thereof. The filter system comprises binary-phase diffraction gratings which achieves symmetric diffraction order distribution and volume Bragg gratings which correspond to the diffraction orders of the binary-phase diffraction gratings. The diffraction light orders of the binary-phase diffraction gratings are sequentially increased from the center to the two sides, the volume Bragg gratings are sequentially placed from the center to the two sides according to a grating period from low to high, and the central axis of the volume Bragg gratings and the central axis of the binary-phase diffraction gratings are symmetrically distributed. Rectangular grid bars are prepared on a grating substrate according to the duty ratio, the period and the grating layer thickness parameter of the gratings, and the binary-phase diffraction gratings are obtained. Gratings are prepared on silicate base photoinduced thermosensitive refractive index glass according to the number of the volume Bragg gratings and the corresponding period and thickness parameters. The broadband angle selection optical fiber has the broadband light input filtering effect, and is simple in structure and good in filtering consistency.

The invention relates to a high-brightness ultra-wideband medium infrared super-continuum spectrum light source. A femtosecond optical parametric amplifier (OPA), a space coupling device and selenide optical fiber are sequentially arranged along a light path direction, the femtosecond OPA comprises a femtosecond mode locking Yb laser, a continuous tuning semiconductor laser, a one second wave plate, a two-tone beam splitter, an achromatic doublet lens, a temperature control device, a periodically poled lithium niobate crystal, an infrared lens and a long-wave germanium-through optical filter, the space coupling device comprises two pieces of infrared lens and a three-dimensional adjustment rack, the selenide optical fiber is arranged on the three-dimensional adjustment rack between the two pieces of infrared lens, and the three-dimensional adjustment rack is used for fixing the optical fiber. By the high-brightness ultra-wideband medium infrared super-continuum spectrum light source, medium infrared super-continuum spectrum output with average power more than 20mW, a spectral range covering 2 to 12 micrometers and high spectrum flatness can be acquired, and the brightness of the high-brightness ultra-wideband medium infrared super-continuum spectrum light source is improved than a synchrotron-radiation medium infrared light source by two orders of magnitude.

The invention belongs to the field of production process equipment, and specifically relates to a continuous culture and filtration system for crystals. The system comprises a culture device, a filtration device and a control device, wherein the culture device comprises a crystal culture tank, a temperature measuring thermal resistance, a PH sensor, a crystal carrier, a crystal carrier motor, a stirrer and a motor thereof, an electric heater, a cooling water inlet and a cooling water outlet, and the filtration device comprises a hot water bath tank and a balance water bath tank, which comprise a hot water tank, a balance water tank and a temperature measuring thermal resistance thereof, a coiled pipe, a receiving tank and a temperature measuring thermal resistance thereof, a conveying pump, a metering pump, a filtration tank, a stirrer and a motor thereof, an electric heater, a cooling water inlet and a cooling water outlet; and the control device comprises a PLC (Programmable Logic Controller) and a touch screen. In the culture process of the fast-growing large crystals, a growth solution with particle impurities flowing out of the crystal culture tank is dissolved by heating and filtered, and finally is cooled to reflux so as to complete the continuous filtration circulation. The growth speed and quality of large-size KDP (potassium dihydrogen phosphate) and DKDP (potassium dideuterium phosphate) crystals are improved.

The invention discloses a laser pretreatment device and method with transparent optical elements arranged side by side. The device comprises a pulse laser, an energy attenuation system, an optical switch, a lens system and a light splitting wedge plate which are arranged in the laser transmission direction, and further comprises a laser energy detector, a CCD imaging system, an electric moving table, a main control computer and the optical elements. The optical elements are arranged on element clamps side by side in the light beam transmission direction, and the element clamps are adjustable in positions and arranged on the electric moving table. The main control computer controls triggering of the pulse laser, on and off of the optical switch and moving of the electric moving table. According to the laser pretreatment device and method with the transparent optical elements arranged side by side, the plurality of optical elements are arranged side by side, the different optical elements are subjected to irradiation treatment with laser lights which are different in energy density at the same time, the energy density is improved by moving the positions of the optical elements arranged side by side for repeated pretreatment, and a fast and efficient serial pretreatment method is achieved.

The invention discloses a photoinduced stable nonlinear sulfur film, and a preparation method thereof, and belongs to an optical film and a nonlinear optical material. The chemical composition of the film is GexAsySzSe(100-x-y-z), wherein x is smaller than or equal to 14 and greater than or equal to 10; y is smaller than or equal to 28 and greater than or equal to 20; z is smaller than or equal to 50 and greater than or equal to 16. A vacuum thermal evaporation method is adopted in preparation of the film; the vacuum degree is 10<-4> to 10<-6> torr; the evaporation rate is 3-20 nm/min; the refractive index of the sulfur film prepared by the method at wavelength of 1.55 microns is 2.20-2.56; the refractive index change of the film under thermal annealing and sub-band gap illumination is 10<-3>; an optical band gap is 1.98-2.48ev; the loss of the film at the wavelength of 1.55 microns is smaller than 0.2 dB/cm; the third-order nonlinear refractive index at the wavelength of 1.55 microns is 2.0-6.0*10<-14> cm<2>/W; no significant two-photon is absorbed; a laser-damaged threshold is greater than 200 GW/cm<2> (5.3 microns, 150fs, 1kHz). The photoinduced stable nonlinear sulfur film has the advantages that 1, the photoinduced refractive index change is tiny, and the optical performance of an apparatus is stable; 2, the anti-laser damage threshold of the film is high, and application of the apparatus in the field of nonlinear optics is facilitated; 3, the composition and the refractive index of the film obtained by vacuum evaporation are consistent with those of adopted block raw materials, and the films produced in different batches are consistent in performance, and easy to control.

The invention discloses a extender lens for expanding high power laser beams, which has the main technical characteristics that a plurality of optical fiber rods with equal lengths are all tightly arranged in the cavity body of a housing and the end surfaces of the optical fiber rods respectively form input faces and output faces; the optical fiber rods are bare optical fibers and can adopt optical fibers the core diameter of which is smaller than that of single mode fiber. The invention can expand the laser beans as well as shape and stabilize the direction of the laser beans, and has the advantages of high laser induced damage threshold, simple structure and great reduction of the volume and the weight of a laser shot system.

The invention provides a method for preparing monoclinic phase Ga2S3 crystal, which comprises the following steps of: mixing Ga2O3, B and S according to the molar ratio of 1: 2: 3 and grinding; tabletting the mixture and putting the obtained tablets into a vacuum quartz tube; heating up to 950 DEG C at the speed of 30-40 DEG C/h; carrying out heat preservation for 72-144h; and cooling to 250 DEG C at the speed of 2-6 DEG/h; washing off the by-product B2O3 by hot water to finally obtain the monoclinic phase Ga2S3 crystal. The compound is good in heat stability, wide in transmittance wave band, simple in synthesis method, easy to operate, enough in raw material source, very high in synthesis yield of the compound, high in purity and good in repeatability, thus being suitable for the requirement of large-scale production.

Provided is a method for preparing monoclinic Ga2S3, comprising: mixing Ga2O3, B, and S according to a mole ratio of 1:2:3, grinding the mixture, pressing the ground mixture to form a sheet, then sealing the sheet into a vacuum quartz tube, and heating the tube in accordance with a specific temperature curve to obtain the product of monoclinic Ga2S3 crystal. Also provided is a use of monoclinic Ga2S3 crystal as infrared wave band second-order nonlinear crystal material.

The invention discloses a crystal material, which is characterized in that the chemical formula of the crystal material is CaNdxEryLa(1-x-y)Ga3O7, wherein x is greater than or equal to 0.01 and less than or equal to 0.05, and y is greater than or equal to 0.1 and less than or equal to 0.3; the crystal material belongs to a tetragonal system and a space group shown in the description; the crystal material is formed into a laminated electronegative skeleton structure formed by a GaO4 tetrahedron, and Nd<3+>, Er<3+>, Ca2<+> and La<3+> are distributed among layers and have an unordered crystal structure. An Nd<+> ion is doped in Er<+3> activated CaLaGa3O7 crystal to greatly enhance the adsorption efficiency of the crystal for pump light, the efficient laser output of the -2.7mu m waveband of LD pumping is realized, the fluorescence emission of the crystal in an intermediate infrared waveband is enhanced, the service life and the particle number of 4I13/2 are greatly decreased, a self-final state bottleneck effect is inhibited, high gain is kept by laser media in an oscillation process, and the slope efficiency of the laser output is improved.

The invention relates to a design method for improving the laser damage threshold of a near-infrared high-reflective film, and belongs to the field of film optics, mainly aiming at a main bottleneck, namely a knot, influencing the threshold of a high-reflective film. The threshold of the knot determines the threshold of the whole film. A current technological means for improving the threshold of the film is mainly to eliminate the knob, namely, to reduce the density and the size of the knob as much as possible to increase the threshold of the film. But under current technical conditions, process difficulty to eliminate the knob is large, the cost is high and the knob cannot be completely eliminated. The invention provides a method for directly increasing the knob threshold to improve the threshold of the film. Both theory and practices prove that an electric field plays an important role for the damage characteristics of the knob, and the electric field in the knob is related to the geometric characteristics and spectral characteristic information of the knob. The damage threshold of the knob can be increased by changing designs of film systems to reduce the intensity of the electric field of the knob. The method is characterized by being high in pertinence, high in efficiency, and simple and feasible.

The invention discloses a high-reflection film for a 10 kW semiconductor laser and a preparation method thereof. A HfO2-TiO2-SiO2 multi-material film structure and the characteristic of large refractive index difference of aTiO2-SiO2 film combination are used to meet the requirement of high reflectivity under a few layers; the HfO2-SiO2 material has the characteristic of high laser damage resistance threshold, and a HfO2-SiO2 film stack is superimposed on the outermost part of the TiO2-SiO2 film stack, thereby improving the half-wave protection effect of laser damage resistance on TiO2-SiO2, achieving a few film layers, meeting the requirement of high reflectivity and improving the laser damage resistance of the film; the high-reflection film is prepared by ion beam assisted deposition, ametallic hafnium target, a metallic titanium target and a quartz glass sheet are used as coating materials, and the evaporation film is bombarded with an oxygen ion beam to obtain an oxide film, so that the compactness and stability of the film are improved.

The invention relates to a preparation method and application of a bismuth oxyiodide non-linear optical crystal. The chemical formula of the crystal is Bi4O5I2; the crystal belongs to a monoclinic system with a space group of P21. The bismuth oxyiodide non-linear optical crystal is synthesized by adopting a hydrolysis method which is simple and low in cost; the raw material is convenient to obtain. The bismuth oxyiodide non-linear optical crystal obtained by the method disclosed by the invention can be used for preparing a non-linear optical device frequency-doubling generator and is a nonlinear optical material with applied value.