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Method for preparing monoclinic phase Ga2S3 crystal

A monoclinic phase and microcrystalline technology, applied in the field of material science, to achieve the effects of high yield, good thermal stability, and sufficient source of raw materials

Inactive Publication Date: 2012-10-03
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Through literature research, there is no information about Ga 2 S 3 Application Report as Infrared Second-Order Nonlinear Optical Material

Method used

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  • Method for preparing monoclinic phase Ga2S3 crystal
  • Method for preparing monoclinic phase Ga2S3 crystal
  • Method for preparing monoclinic phase Ga2S3 crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1: 1 mmol monoclinic Ga 2 S 3 Synthesis

[0024] Weigh 1 mmol of Ga 2 o 3 (187 mg), 2 mmol of B powder (22 mg), 3 mmol of S powder (97 mg), ground and mixed in an agate mortar, and then pressed into tablets, under a vacuum of 2 o 3 , about 1 mmol of monoclinic Ga can be obtained 2 S 3 Polycrystalline powder with a yield of over 90%.

Embodiment 2

[0025]Example 2: Monoclinic Ga 2 S 3 Powder frequency-octave phase-matching test

[0026] Monoclinic Ga 2 S 3 The polycrystalline powder is sieved with a steel sieve to screen powders in six particle size ranges of 30-50, 50-75, 75-100, 100-150, 150-200, and 200-300 m, respectively loading samples and placing them on the laser light path , using a near-infrared CCD to measure their frequency-doubled signal intensities at 1910nm infrared laser wavelengths, and analyze and judge whether the compounds can be phase-matched after drawing. For the test results of powder frequency doubling phase matching, see Figure 4 , it can be seen that the double frequency signal of the sample becomes larger as the particle size increases, so it is judged that the monoclinic Ga 2 S 3 It can be phase matched under 1910nm laser.

Embodiment 3

[0027] Example 3: Monoclinic Ga 2 S 3 Laser Damage Threshold Test for

[0028] Monoclinic Ga 2 S 3 The polycrystalline powder is sieved with a steel sieve to sieve the powder with a particle size range of 50-75 m. After loading the sample, the laser damage threshold is measured under a 1064 nm laser with a pulse width of about 8 ns. The laser power is continuously increased to observe the damage of the sample. Until the sample has a damage spot, record the laser power at this time, and measure the main damage spot area to be 2.45 mm 2 , it can be deduced that the damage threshold of the sample is 174 MW / cm 2 .

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Abstract

The invention provides a method for preparing monoclinic phase Ga2S3 crystal, which comprises the following steps of: mixing Ga2O3, B and S according to the molar ratio of 1: 2: 3 and grinding; tabletting the mixture and putting the obtained tablets into a vacuum quartz tube; heating up to 950 DEG C at the speed of 30-40 DEG C / h; carrying out heat preservation for 72-144h; and cooling to 250 DEG C at the speed of 2-6 DEG / h; washing off the by-product B2O3 by hot water to finally obtain the monoclinic phase Ga2S3 crystal. The compound is good in heat stability, wide in transmittance wave band, simple in synthesis method, easy to operate, enough in raw material source, very high in synthesis yield of the compound, high in purity and good in repeatability, thus being suitable for the requirement of large-scale production.

Description

technical field [0001] The present invention relates to monoclinic Ga 2 S 3 The application of crystal as a second-order nonlinear optical material in the infrared band and the preparation method thereof belong to the field of material science and the field of optics. Background technique [0002] At present, nonlinear crystal materials are attracting more and more attention due to the application of laser technology, especially the second-order nonlinear crystal materials in the deep ultraviolet and mid-far infrared bands, because there are few types and cannot meet the needs of applications. hotspots. The chalcogenide system is becoming the research direction of the middle and far infrared second-order nonlinear crystals, such as AgGaS 2 (AGS), AgGaSe 2 (AGSe), BaGa 4 S 7 (BGS) etc. have been industrialized and commercialized. Most of these chalcogenides are ternary or more than ternary compounds, and the second-order nonlinear properties of binary chalcogenides ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00
Inventor 张明建郭国聪
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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