Metal dielectric film wideband pulse compressed grating

A metal medium, broadband pulse technology, applied in diffraction grating and other directions, to achieve the effect of high diffraction efficiency and high damage threshold

Inactive Publication Date: 2013-02-13
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As far as we know, no one has proposed a wide-spectrum, wide-angle spectrum metal dielectric film reflective polarization beam splitter grating for the 1053 nm band

Method used

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  • Metal dielectric film wideband pulse compressed grating
  • Metal dielectric film wideband pulse compressed grating
  • Metal dielectric film wideband pulse compressed grating

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Embodiment 1

[0027] The metal dielectric film pulse compression grating is composed of a quartz substrate, a metal layer 8, a matching layer 7 composed of two dielectric films and a rectangular etching layer 4. The period of the rectangular etching layer 4 is 574.7 nanometers, the duty ratio is 0.26, and the SiO of the third low refractive index film layer 1 2 (refractive index 1.45) thickness 100 nanometers, the material of the second high refractive index film layer 2 is HfO 2 (refractive index 1.96) layer thickness 149 nm, second low refractive index film layer 3 SiO 2 The thickness is 57nm. The first high refractive index layer 5 of the matching layer 7 is HfO 2 , with a thickness of 119 nanometers; the first low refractive index layer 6 is SiO2, with a thickness of 81 nanometers. The gold layer 8 has a thickness of 200 nm. Such as figure 2 When the incident angle is 53°, for the incident light of 800 nm, the -1 order diffraction efficiency of the grating TE is the highest, great...

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Abstract

A metal dielectric film wideband pulse compressed grating used in 800nm center wavelength consists of a metal layer, a matching layer consisting of dielectric films and a grating etching layer which are sequentially arranged on a quartz substrate from the inside out and integrated together, and the outermost layer is SiO2. The rectangular grating has the period of 490-640nm, and the duty cycle of 0.2-0.4. The interlayer of the grating etching layer is a high-refractivity layer, the inner layer and the outer layer of the grating etching layer are low-refractivity layers SiO2; the outer layer of the matching layer is a high-refractivity layer, and the inner layer of the matching layer is a low-refractivity layer; and the thickness of the gold layer is larger than 50nm. By adopting the metal dielectric film wideband pulse compressed grating at the 700-909 nm band, the -1-level reflection and diffraction efficiencies of TE polarization are larger than 90 percent at the incidence angle of 53 DEG; and when the grating is at the 800nm incident wavelength, the -1-level reflection and diffraction efficiencies of TE polarization are larger than 90 percent at the incidence angle of 29-65 DEG. The metal dielectric film wideband pulse compressed grating can be used as a pulse compressed grating of a high-power ultrashort impulse laser system.

Description

technical field [0001] The invention relates to a high-power laser system, in particular to a metal dielectric film broadband pulse compression grating for a central wavelength of 800 nanometers. Background technique [0002] High-power ultrashort pulse lasers based on chirped pulse amplification technology have a wide range of application requirements in the fields of laser processing and research on the interaction between light and matter. Reflective gratings for stretching and compressing femtosecond laser pulses play an important role in chirped pulse amplification systems. The pulse compression grating must have high diffraction efficiency, anti-laser damage threshold and wide enough working bandwidth. The earliest pulse compression grating is a gold-plated grating, which has a relatively wide operating bandwidth, but it is difficult to obtain high diffraction efficiency and anti-laser damage threshold due to its strong absorption characteristics. Multilayer dielectr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/18
Inventor 关贺元晋云霞吴建波杜颖侯永强刘世杰易葵邵建达
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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