Photoinduced stable nonlinear sulfur film, and preparation method thereof

A chalcogenide thin film and nonlinear technology, applied in the field of photo-stabilized nonlinear chalcogenide thin film and its preparation, can solve problems such as unstable optical properties, and achieve stable optical properties of devices, high anti-laser damage threshold, and photorefractive properties. The effect of small rate changes

Inactive Publication Date: 2014-02-12
XUZHOU NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a photo-stable nonlinear chalcogenide thin film and its preparation method to solve th

Method used

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  • Photoinduced stable nonlinear sulfur film, and preparation method thereof
  • Photoinduced stable nonlinear sulfur film, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1: The composition of the chalcogenide film is Ge 12 As 24 S 32 Se 32

[0020] The composition of particle size less than 2mm is Ge 12 As 24 S 32 Se 32 Put 5g of glass into the Ti evaporation boat in the cavity of the vacuum coating machine, add a buffer cover, and then put Si / SiO with a diameter of 4 inches and a thickness of 300 μm 2 (SiO 2 The thickness of the layer is 2μm) and the substrate is fixed on the rotating sample holder, the door of the chamber is closed tightly, and the vacuum in the chamber is evacuated to 10 -7 torr; Clean the substrate with an Ar ion gun for 120 seconds before coating, then heat up the evaporation boat, while monitoring the vacuum degree and thermal evaporation rate in the chamber during evaporation, and slowly adjust the heating

[0021] Power until the evaporation rate stabilizes to 6nm / min, at this time the pressure of the vacuum chamber is 4.0x10 -6 torr; when the thickness of the film reaches 1.2 μm, stop heati...

Embodiment 2

[0024] Example 2: The composition of the chalcogenide film is Ge 10 As 28 S 16 Se 46

[0025] The composition of particle size less than 2mm is Ge 10 As 28 S 16 Se 46 Put 5g of glass into the Ti evaporation boat in the cavity of the vacuum coating machine, add a buffer cover, and then put Si / SiO with a diameter of 4 inches and a thickness of 300 μm 2 (SiO 2 The thickness of the layer is 2μm) and the substrate is fixed on the rotating sample holder, the door of the chamber is closed tightly, and the vacuum in the chamber is evacuated to 10 -7 torr; Clean the substrate with an Ar ion gun for 90 seconds before coating, then heat up the evaporation boat, monitor the vacuum degree and thermal evaporation rate in the chamber during evaporation, and slowly adjust the heating power until the evaporation rate is stable to 12 nm / min, at this time the pressure of the vacuum chamber is 1.2x10 -5 torr; when the thickness of the film reaches 2.5 μm, stop heating, and slowly fi...

Embodiment 3

[0028] Example 3: The composition of the chalcogenide thin film is Ge 14 As 20 S 50 Se 16

[0029] The composition of particle size less than 2mm is Ge 14 As 20 S 50 Se 16 Put 5g of glass into the Ti evaporation boat in the cavity of the vacuum coating machine, add a buffer cover, and then put Si / SiO with a diameter of 4 inches and a thickness of 300 μm 2 (SiO 2 The thickness of the layer is 2μm) and the substrate is fixed on the rotating sample holder, the door of the chamber is closed tightly, and the vacuum in the chamber is evacuated to 10 -7 torr; Clean the substrate with an Ar ion gun for 60 seconds before coating, then heat up the evaporation boat, monitor the vacuum degree and thermal evaporation rate in the chamber during evaporation, and slowly adjust the heating power until the evaporation rate stabilizes to 18 nm / min, at this time the pressure of the vacuum chamber is 4.2x10 -5 torr; when the thickness of the film reaches 4.0 μm, stop heating, and slo...

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Abstract

The invention discloses a photoinduced stable nonlinear sulfur film, and a preparation method thereof, and belongs to an optical film and a nonlinear optical material. The chemical composition of the film is GexAsySzSe(100-x-y-z), wherein x is smaller than or equal to 14 and greater than or equal to 10; y is smaller than or equal to 28 and greater than or equal to 20; z is smaller than or equal to 50 and greater than or equal to 16. A vacuum thermal evaporation method is adopted in preparation of the film; the vacuum degree is 10<-4> to 10<-6> torr; the evaporation rate is 3-20 nm/min; the refractive index of the sulfur film prepared by the method at wavelength of 1.55 microns is 2.20-2.56; the refractive index change of the film under thermal annealing and sub-band gap illumination is 10<-3>; an optical band gap is 1.98-2.48ev; the loss of the film at the wavelength of 1.55 microns is smaller than 0.2 dB/cm; the third-order nonlinear refractive index at the wavelength of 1.55 microns is 2.0-6.0*10<-14> cm<2>/W; no significant two-photon is absorbed; a laser-damaged threshold is greater than 200 GW/cm<2> (5.3 microns, 150fs, 1kHz). The photoinduced stable nonlinear sulfur film has the advantages that 1, the photoinduced refractive index change is tiny, and the optical performance of an apparatus is stable; 2, the anti-laser damage threshold of the film is high, and application of the apparatus in the field of nonlinear optics is facilitated; 3, the composition and the refractive index of the film obtained by vacuum evaporation are consistent with those of adopted block raw materials, and the films produced in different batches are consistent in performance, and easy to control.

Description

technical field [0001] The invention relates to an optical thin film and a nonlinear optical material, in particular to a light-induced stable nonlinear chalcogenide thin film and a preparation method thereof. Background technique [0002] Due to the limitation of photoelectric signal conversion capability, the current information transmission capacity and speed have encountered bottlenecks. To solve this problem, scientists are actively developing new optical devices to promote optical information processing into the all-optical era. Due to the advantages of easy integration, low cost and large scale, planar optical waveguide devices have become the development direction of optical communication devices. Among the material systems currently used to make planar integrated optical waveguide devices, silicon-based optical waveguides are compatible with optoelectronic integrated circuits in the manufacturing process, and can well achieve mode matching with standard single-mode...

Claims

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Application Information

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IPC IPC(8): C23C14/26C23C14/06C01B19/00
Inventor 杨志勇杨安平张斌任和张鸣杰郭威杨艳唐定远
Owner XUZHOU NORMAL UNIVERSITY
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