A kind of preparation method of photo-stable nonlinear chalcogenide thin film

A chalcogenide thin film and nonlinear technology, which is applied in the field of photo-stabilized nonlinear chalcogenide thin film and its preparation, can solve the problems of unstable optical properties, and achieve stable optical properties of devices, small changes in photo-induced refractive index, and consistent performance. Sexually controllable effects

Inactive Publication Date: 2016-08-17
XUZHOU NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a photo-stable nonlinear chalcogenide thin film and its preparation method to solve the problem of unstable optical properties caused by light-induced changes in common chalcogenide thin films and related optical devices during use

Method used

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  • A kind of preparation method of photo-stable nonlinear chalcogenide thin film
  • A kind of preparation method of photo-stable nonlinear chalcogenide thin film

Examples

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Comparison scheme
Effect test

Embodiment 1

[0019] Example 1: The composition of the chalcogenide film is Ge 12 As 24 S 32 Se 32

[0020] The composition of particle size less than 2mm is Ge 12 As 24 S 32 Se 32 Put 5g of glass into the Ti evaporation boat in the cavity of the vacuum coating machine, add a buffer cover, and then put Si / SiO with a diameter of 4 inches and a thickness of 300 μm 2 (SiO 2 The thickness of the layer is 2μm) and the substrate is fixed on the rotating sample holder, the door of the chamber is closed tightly, and the vacuum in the chamber is evacuated to 10 -7 torr; Clean the substrate with an Ar ion gun for 120 seconds before coating, then heat up the evaporation boat, while monitoring the vacuum degree and thermal evaporation rate in the chamber during evaporation, and slowly adjust the heating

[0021] Power until the evaporation rate stabilizes to 6nm / min, at this time the pressure of the vacuum chamber is 4.0x10 -6 torr; when the thickness of the film reaches 1.2 μm, stop heati...

Embodiment 2

[0024] Example 2: The composition of the chalcogenide film is Ge 10 As 28 S 16 Se 46

[0025] The composition of particle size less than 2mm is Ge 10 As 28 S 16 Se 46 Put 5g of glass into the Ti evaporation boat in the cavity of the vacuum coating machine, add a buffer cover, and then put Si / SiO with a diameter of 4 inches and a thickness of 300 μm 2 (SiO 2 The thickness of the layer is 2μm) and the substrate is fixed on the rotating sample holder, the door of the chamber is closed tightly, and the vacuum in the chamber is evacuated to 10 -7 torr; Clean the substrate with an Ar ion gun for 90 seconds before coating, then heat up the evaporation boat, monitor the vacuum degree and thermal evaporation rate in the chamber during evaporation, and slowly adjust the heating power until the evaporation rate is stable to 12 nm / min, at this time the pressure of the vacuum chamber is 1.2x10 -5 torr; when the thickness of the film reaches 2.5 μm, stop heating, and slowly fi...

Embodiment 3

[0028] Example 3: The composition of the chalcogenide thin film is Ge 14 As 20 S 50 Se 16

[0029] The composition of particle size less than 2mm is Ge 14 As 20 S 50 Se 16 Put 5g of glass into the Ti evaporation boat in the cavity of the vacuum coating machine, add a buffer cover, and then put Si / SiO with a diameter of 4 inches and a thickness of 300 μm 2 (SiO 2 The thickness of the layer is 2μm) and the substrate is fixed on the rotating sample holder, the door of the chamber is closed tightly, and the vacuum in the chamber is evacuated to 10 -7 torr; Clean the substrate with an Ar ion gun for 60 seconds before coating, then heat up the evaporation boat, monitor the vacuum degree and thermal evaporation rate in the chamber during evaporation, and slowly adjust the heating power until the evaporation rate stabilizes to 18 nm / min, at this time the pressure of the vacuum chamber is 4.2x10 -5 torr; when the thickness of the film reaches 4.0 μm, stop heating, and slo...

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Abstract

A light-induced stable nonlinear chalcogenide thin film and a preparation method thereof belong to optical thin films and nonlinear optical materials. The chemical composition of the film is Ge x As y S z Se 100‑x‑y‑z , wherein 10≤x≤14, 20≤y≤28, 16≤z≤50; its preparation adopts vacuum thermal evaporation method, and the vacuum degree is 10 ‑4 ~10 ‑6 torr, the evaporation rate is 3~20nm / min. The chalcogenide film prepared by the present invention has a refractive index of 2.20 to 2.56 at a wavelength of 1.55 μm, and the change of the film’s refractive index under thermal annealing and sub-band gap light is less than 10 ‑3 ; The optical band gap is 1.98~2.48ev; the loss of the film at 1.55μm wavelength is less than 0.2dB / cm; the third-order nonlinear refractive index at 1.55μm wavelength is 2.0~6.0x10 ‑14 cm 2 / W, no significant two-photon absorption; laser damage threshold greater than 200GW / cm 2 (5.3μm, 150fs, 1kHz). Advantages: 1. The light-induced refractive index change is extremely small, and the optical performance of the device is stable; 2. The anti-laser damage threshold of the film is high, which is conducive to the application of the device in the field of nonlinear optics; 3. The film composition and The refractive index is consistent with the bulk raw material used, and the consistency of film properties prepared in different batches is easy to control.

Description

technical field [0001] The invention relates to an optical thin film and a nonlinear optical material, in particular to a light-induced stable nonlinear chalcogenide thin film and a preparation method thereof. Background technique [0002] Due to the limitation of photoelectric signal conversion capability, the current information transmission capacity and speed have encountered bottlenecks. To solve this problem, scientists are actively developing new optical devices to promote optical information processing into the all-optical era. Due to the advantages of easy integration, low cost and large scale, planar optical waveguide devices have become the development direction of optical communication devices. Among the material systems currently used to make planar integrated optical waveguide devices, silicon-based optical waveguides are compatible with optoelectronic integrated circuits in the manufacturing process, and can well achieve mode matching with standard single-mode...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/26C23C14/06C01B19/00
Inventor 杨志勇杨安平张斌任和张鸣杰郭威杨艳唐定远
Owner XUZHOU NORMAL UNIVERSITY
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