An Electrolyte Gate Oxide Semiconductor Phototransistor for Ultraviolet Light Detection

Abstract

The present invention belongs to the semiconductor optoelectronic device technical field and relates to an electrolyte gate oxide semiconductor phototransistor for ultraviolet light detection. The electrolyte gate oxide semiconductor phototransistor for the ultraviolet light detection includes a polycrystalline or single-crystal semiconductor active layer which is located on an insulating substrate, a source / drain electrode, an insulating protective layer, an electrolyte gate dielectric which covers the active layer and the protective layer, and a gate electrode which contacts with the electrolyte. The electrolyte gate oxide semiconductor phototransistor is provided with an oxide semiconductor material having a wide optical bandgap, so that the electrolyte gate oxide semiconductor phototransistor can be low in cost and is transparent; the cut-off wavelength of the detector can be achieved by adjusting the compositions of the oxide semiconductor material; the oxide semiconductor ultraviolet detector is based on a field effect transistor structure, so that the oxide semiconductor ultraviolet detector has higher responsiveness, a higher signal to noise ratio and higher stability, and has no requirements for harsh vacuum environments; and the electrolyte having a high dielectric constant is adopted as the gate dielectric layer, and therefore, the structure of the phototransistor is simple, and at the same time, the working voltage of the phototransistor is greatly reduced.

Description

technical field [0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and more specifically relates to an electrolyte gate oxide semiconductor phototransistor for ultraviolet light detection. Background technique [0002] Ultraviolet (UV) detection technology is a photoelectric detection technology with high application value in military and civilian applications, and is widely used in sky communication, ozone detection, pollutant detection, flame detection and other fields. [0003] Ultraviolet detectors can generally be divided into three different structures: photoresistors, photodiodes, and phototransistors. Among them, phototransistors have attracted widespread attention in the industry due to their high responsivity and high signal-to-noise ratio (CN201110206933.2, etc.). In addition, as a three-terminal device, the phototransistor has the functions of switching, driving, and reading, and can be used in the active array of...

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Problems solved by technology

Moreover, due to the existence of the intermediate state in the oxide, the detector responds to a part of visible light, which greatly reduces the rejection ratio of ultraviolet-visible light.

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