Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of monoclinic phase Ga2S3 crystal and application of same to optics

A technology of monoclinic phase and monoclinic crystal system, applied in the field of material science, to achieve the effect of high yield, good thermal stability and sufficient source of raw materials

Active Publication Date: 2014-01-01
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Through literature research, there is no information about Ga 2 S 3 Application Report as Infrared Second-Order Nonlinear Optical Material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of monoclinic phase Ga2S3 crystal and application of same to optics
  • Preparation method of monoclinic phase Ga2S3 crystal and application of same to optics
  • Preparation method of monoclinic phase Ga2S3 crystal and application of same to optics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Example 1: 1mmol monoclinic Ga 2 S 3 Synthesis

[0034] Weigh 1mmol of Ga 2 o 3 (187mg), 2mmol of B powder (22mg), 3mmol of S powder (97mg, excess 1%), ground in an agate mortar for about 10min until fully mixed, and then pressed into tablets, under a vacuum of 2 o 3 , about 1 mmol of monoclinic Ga can be obtained 2 S 3 Polycrystalline powder with a yield of over 90%.

[0035] The crystal structure parameter of the present invention is: a=11.117 (9) b=6.406(5) c=7.033(5) α=90°, β=121.15(9)°, γ=90°, Z=4. The crystal structure analysis shows that the compound has a simple three-dimensional network framework structure and crystallizes in the non-central space group Cc.

Embodiment 2

[0036] Example 2: 30mmol monoclinic Ga 2 S 3 Synthesis

[0037] Weigh 30mmol of Ga 2 o 3 (5623mg), 60mmol of B powder (649mg), 90mmol of S powder (2943mg, excess 2%), ball milled in a ball mill at 400r / min for 2h until fully mixed, and then pressed into tablets, under a vacuum of 2 o 3 , about 30 mmol of monoclinic Ga can be obtained 2 S 3 Polycrystalline powder with a yield of over 90%.

[0038] This example demonstrates that this method can be used to synthesize monoclinic Ga in large quantities 2 S 3 Polycrystalline powder, for the next step of monoclinic Ga 2 S 3 The growth of large crystals sets the stage.

Embodiment 3

[0039] Example 3: 10mmol monoclinic Ga 2 S 3 Synthesis

[0040] Weigh 10mmol of Ga 2 o 3 (1874mg), 20mmol of B powder (217mg), 30mmol of S powder (981mg, excess 2%), ball milled in a ball mill at 400r / min for 2h until fully mixed, and then pressed into tablets, under a vacuum of 2 o 3 , about 10 mmol of monoclinic Ga can be obtained 2 S 3 Polycrystalline powder with a yield of over 98%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
porosityaaaaaaaaaa
Login to View More

Abstract

Provided is a method for preparing monoclinic Ga2S3, comprising: mixing Ga2O3, B, and S according to a mole ratio of 1:2:3, grinding the mixture, pressing the ground mixture to form a sheet, then sealing the sheet into a vacuum quartz tube, and heating the tube in accordance with a specific temperature curve to obtain the product of monoclinic Ga2S3 crystal. Also provided is a use of monoclinic Ga2S3 crystal as infrared wave band second-order nonlinear crystal material.

Description

technical field [0001] The present invention relates to monoclinic Ga 2 S 3 The application of crystal as a second-order nonlinear optical material in the infrared band and the preparation method thereof belong to the field of material science and the field of optics. Background technique [0002] At present, nonlinear crystal materials are attracting more and more attention due to the application of laser technology, especially the second-order nonlinear crystal materials in the deep ultraviolet and mid-far infrared bands, because there are few types and cannot meet the needs of applications. hotspots. The chalcogenide system is becoming the research direction of the middle and far infrared second-order nonlinear crystals, such as AgGaS 2 (AGS), AgGaSe 2 (AGSe), AgGa (1-x) In x Se 2 , GaSe, LiInS 2 (LIS), LiInSe 2 etc. have received extensive attention. Most of these chalcogenides are ternary or more than ternary compounds, and the second-order nonlinear propertie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B1/10C01G15/00G02F1/355G02F1/37G02F1/39
CPCC01G15/00G02F1/355G02F1/37G02F1/3551C01P2002/72C01P2002/76C01P2002/77C01P2002/82C01P2002/84G02F1/39
Inventor 张明建郭国聪曾卉一姜小明范玉航刘彬文
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com