Preparation method of monoclinic phase Ga2S3 crystal and application of same to optics
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
- Publication Date
- 2014-01-01
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Abstract
Description
technical field
[0001] The present invention relates to monoclinic Ga 2 S 3 The application of crystal as a second-order nonlinear optical material in the infrared band and the preparation method thereof belong to the field of material science and the field of optics. Background technique
[0002] At present, nonlinear crystal materials are attracting more and more attention due to the application of laser technology, especially the second-order nonlinear crystal materials in the deep ultraviolet and mid-far infrared bands, because there are few types and cannot meet the needs of applications. hotspots. The chalcogenide system is becoming the research direction of the middle and far infrared second-order nonlinear crystals, such as AgGaS 2 (AGS), AgGaSe 2 (AGSe), AgGa (1-x) In x Se 2 , GaSe, LiInS 2 (LIS), LiInSe 2 etc. have received extensive attention. Most of these chalcogenides are ternary or more than ternary compounds, and the second-order nonlinear propertie...