The invention relates to a photo-thermal
camouflage device and a manufacturing method thereof. The photo-thermal
camouflage device comprises a
semiconductor refrigeration substrate, RGB-LEDs are arranged in the
semiconductor refrigeration substrate, the
semiconductor refrigeration substrate further comprises a lower substrate, an upper substrate, electrodes and semiconductor particles, the lower substrate and the upper substrate are oppositely arranged, the electrodes are arranged on the lower substrate and the upper substrate, and the semiconductor particles are arranged on the electrodes. The semiconductor particles comprise P-type semiconductor particles and N-type semiconductor particles, the P-type semiconductor particles and the N-type semiconductor particles are alternately arranged between the lower substrate and the upper substrate and form a loop together with the
electrode, and during working, external
voltage is applied to the loop, so that the semiconductor particles are formed by the P-type semiconductor particles and the N-type semiconductor particles; the device is cooled and heated by adjusting the direction and magnitude of the current so as to change the
infrared spectrum image of the device. According to the invention, the semiconductor refrigeration substrate and the RGB-LED are integrated by utilizing the advantages of no
refrigerant, no vibration and no
noise during working and simplicity and convenience in operation of a semiconductor refrigeration technology, so that the photo-thermal
camouflage device with independently adjustable visible light and
infrared light patterns is manufactured.