Front cutting technology of light emitting diode

Abstract

The invention provides a front cutting technology of a light emitting diode. The technology comprises the steps of 1) forming a light emitting epitaxy structure at least comprising N-type layers, quantum well layers and P-type layers on the surface of a semiconductor substrate, 2) defining a plurality of light emitting units and etching a plurality of passages up to the semiconductor substrate among the light emitting units, 3) forming N electrode preparation areas in the light emitting units, 4), forming transparent conductive layers on the surfaces of the P-type layers of the light emitting units, preparing P electrodes on the surfaces of the transparent conductive layers and preparing N electrodes in the N electrode preparation areas, 5) performing laser front cutting technologies on the passages and forming a plurality of cutting marks corresponding to the light emitting units in the semiconductor substrate, and 6) splitting according to the cutting marks. The invention provides a laser front cutting method of the light emitting diode. The method can effectively avoid laser damage to the light emitting diode; the brightness and the yield of the light emitting diode are improved and increased; and the method is simple in technology and is suitable for technology production.

Description

technical field [0001] The invention belongs to the field of light-emitting diode manufacturing, in particular to a front cutting process of light-emitting diodes. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and its ...

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a front-side cutting process of light-emitting diodes, which is used to solve t...

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