Radial EIO (extended interaction oscillator) for high-power source

A technology of extended interaction and high power, applied in the field of vacuum electronics, can solve the problems of limited working efficiency, enhanced space charge effect, increased working current, etc., and achieve compact structure, high power capacity and high working current Effect

Inactive Publication Date: 2015-05-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the efficiency of this kind of EIO device with electron beam longitudinal propagation is still limited to a large extent by the size of the electron beam channel.
Due to the limited area of ​​the electron injection channel, to increase the working current, we can only proceed from the perspective of increasing...

Method used

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  • Radial EIO (extended interaction oscillator) for high-power source
  • Radial EIO (extended interaction oscillator) for high-power source
  • Radial EIO (extended interaction oscillator) for high-power source

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Embodiment Construction

[0019] The electron beam is emitted from the cathode, passes through the axisymmetric focusing magnetic field, and enters the high-frequency region of the radial EIO at a certain current speed. Such as Figure 4 In the partitions shown, the 11th and 12th regions are the electron injection channels, and the 12th and 13th regions are the interaction gaps. Area 12 is the injector-wave interaction area, and Area 11 is the drift section area. It is required that there is a radial electric field in Area 12, and there is no radial electric field in Area 11. Therefore, the relationship between the required mode and the corresponding area is Zone 11 - a quasi-coaxial cavity mode, and p=0 (Note: m, n, p represent the high-frequency field angular direction, radial direction, and axial distribution order of the electron beam channel area in the radial EIO respectively); 13 areas—coaxial cavity TEM (z) mode; zone 12 is mixed mode.

[0020] The electrons are injected into the 12th area...

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Abstract

The invention discloses a radial EIO (extended interaction oscillator) for a high-power source, belongs to the technical field of vacuum electronics, and relates to a high-power micro-wave and millimeter wave source technology. The invention designs a radial EIO adopting circular sheet electron beam under the limit of the cathode current emission density. The radial EIO comprises two disk bodies, a cathode, an insulated circular ring-shaped piece and an electron beam channel, wherein the disk bodies are symmetrically arranged in the longitudinal direction, and each disk body is provided with a control anode head and circular ring-shaped grooves. The EIO can obtain higher power under small current density by increasing the electron emission area and an electron beam channel area; compared with EIOs adopting other structures, the EIO can meet the requirement for high-power output; the EIO has better cooling capacity, and meanwhile, due to the specific cylindrical symmetry structure, machining becomes simple, and the assembly error can be effectively reduced; the cathode of an electron-optical system is located in the center of a device, the structure is compact, and the shock-proof performance is better.

Description

technical field [0001] The invention belongs to the technical field of vacuum electronics and relates to high-power microwave and millimeter wave source technologies. Background technique [0002] Extended Interaction Oscillator (Extended Interaction Oscillator, EIO) is an important class of millimeter-wave electric vacuum devices. It was mainly used as a high-power microwave radiation source in the early days. Now it has become an important high-power source in the millimeter-wave and even terahertz bands. device. As an oscillating device, the EIO slow-wave resonant circuit is shorter than the high-frequency system used by other types of oscillating devices such as return wave oscillators, thereby reducing the overall weight, reducing the device's requirements for technology, and easily ensuring machining accuracy. EIO usually consists of a slow wave structure with multiple coupling gaps to form a cavity, which not only ensures the improvement of power, bandwidth and effic...

Claims

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Application Information

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IPC IPC(8): H01J25/11H01J23/24
CPCH01J25/11H01J23/24H01J2223/24H01J2225/11
Inventor 雷颜铭鄢扬傅文杰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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