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Method for preparation of large size CVD diamond by vertical splicing and cutting

A cutting method and diamond technology, applied in chemical instruments and methods, from chemically reactive gases, single crystal growth, etc., can solve problems such as diamond separation, achieve the effect of breaking through size bottlenecks and saving costs

Active Publication Date: 2019-09-13
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the above-mentioned problems, the key technical problem of the present invention is to change the general use of the seed crystal (100) growth surface as the spliced ​​growth surface, and the size of the epitaxial diamond does not depend on the size of the seed crystal, and large-size diamonds can be prepared by adjusting the number of seed crystals , In addition, it solves the problem of separation of large-size diamonds and seed crystals that are generally grown by splicing

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  • Method for preparation of large size CVD diamond by vertical splicing and cutting
  • Method for preparation of large size CVD diamond by vertical splicing and cutting
  • Method for preparation of large size CVD diamond by vertical splicing and cutting

Examples

Experimental program
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Effect test

Embodiment 1

[0036] Select 10 single crystal diamonds with a side orientation of (100), each with a size of 4×4×1mm 3 , arrange 10 seed crystals vertically and closely, such as figure 1 shown. The upper surface of its composition is mechanically polished at the same time, and the seed crystals to be spliced ​​are placed vertically and closely together, and placed on the same workpiece, so that all the seed crystals can be polished under the same process conditions, ensuring the upper surface. It has the same height and roughness after polishing. First use a load of 200 for 5 minutes, then increase the load to 600, and polish for 10 minutes. Finally, use a load of 300 and polish for 10 minutes. For comparison, the polished sample was acid-washed for 30 minutes, and then ultrasonically cleaned with acetone and absolute ethanol for 10 minutes; the laser was used for groove processing, such as figure 2 As shown, size W1=50μm, W2=4000μm, d=50μm, set laser power 1KW, laser step length 5mm / s;...

Embodiment 2

[0038] Select 15 single crystal diamonds with a side orientation of (110), each with a size of 8×8×1mm 3 , arrange 15 seed crystals vertically and closely, such as figure 1 shown. The upper surface of its composition is mechanically polished at the same time, and the seed crystals to be spliced ​​are placed vertically and closely together, and placed on the same workpiece, so that all the seed crystals can be polished under the same process conditions, ensuring the upper surface. It has the same height and roughness after polishing. First use a load of 300 for 5 minutes, then increase the load to 800, and polish for 10 minutes. Finally, use a load of 300 and polish for 10 minutes. For comparison, the polished sample was pickled for 40 minutes, and then ultrasonically cleaned with acetone and absolute ethanol for 10 minutes respectively; using a laser for groove processing, it is necessary to make a periodic microgrooves, such as image 3 As shown, size W1=100μm, W2=500μm, ...

Embodiment 3

[0040] Select 20 single crystal diamonds with a side orientation of (100), each with a size of 10×10×1mm 3 , arrange 20 seed crystals vertically and closely, such as figure 1 shown. The upper surface of its composition is mechanically polished at the same time, and the seed crystals to be spliced ​​are placed vertically and closely together, and placed on the same workpiece, so that all the seed crystals can be polished under the same process conditions, ensuring the upper surface. It has the same height and roughness after polishing. First use a load of 300 for 5 minutes, then increase the load to 800, and polish for 10 minutes. Finally, use a load of 300 and polish for 10 minutes. For comparison, the polished sample was acid-washed for 40 minutes, and then ultrasonically cleaned with acetone and absolute ethanol for 20 minutes respectively; the laser was used for groove processing, such as figure 2 As shown, the size W1=150μm, W2=10000μm, d=50μm, set the laser power to 3...

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Abstract

Belonging to the field of diamond material preparation, the invention discloses a method for preparation of large size CVD diamond by vertical splicing and cutting. Specifically, epitaxial growth of large size CVD diamond is carried out on the sides of a plurality of vertically and tightly arranged monocrystal diamond seed crystals, and then the seed crystals and epitaxial diamond are separated bylaser cutting process in order to obtain large size CVD diamond. The process steps include: a. conducting precision mechanical polishing treatment on the upper surfaces of the plurality of verticallyand tightly arranged monocrystal diamond seed crystals to obtain seed crystals with a height difference within 10microm and surface roughness less than 1nm; b. conducting patterned grooving treatmenton the seams of all the seed crystals by laser etching, electron beam lithography, ICP etching, focused ion beam bombardment or other methods; c. employing microwave plasma chemical vapor deposition(MPCVD) method for epitaxial growth of the seed crystals' sides subjected to grooving treatment; and d. separating the seed crystals from the epitaxial large size diamond by laser side cutting in order, thus obtaining the large-size and high-quality monocrystal diamond.

Description

technical field [0001] The invention belongs to the technical field of growing single crystal diamond materials; in particular, it relates to a plurality of single crystal diamond seed crystals placed vertically and closely together, and large-size single crystal diamonds are grown by assembling and splicing on their sides. High-quality single-crystal diamonds of required size, without the need for ion implantation stripping methods, commonly used laser cutting methods can separate epitaxial large-size diamonds from the upper surfaces of multiple seed crystals, which can greatly reduce the loss of diamond materials. [0002] technical background [0003] The excellent mechanical, electrical, thermal, acoustic and optical properties of diamond make it have broad application prospects in machining, electronics, heat sinks and optical windows. However, the size of natural diamond is usually small, so far the artificial synthesis of single crystal diamond includes high temperatur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/04C30B25/20
CPCC30B25/186C30B25/205C30B29/04
Inventor 李成明刘金龙朱肖华邵思武赵云屠鞠萍陈良贤魏俊俊张建军
Owner UNIV OF SCI & TECH BEIJING
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