Method for growing polycrystalline diamond piece by using microwave plasma chemical vapor deposition method

A chemical vapor deposition and microwave plasma technology is applied in the field of synthetic diamond to achieve the effect of increasing the density and refining the diamond particles

Inactive Publication Date: 2019-06-21
河北地质大学
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For this reason, researchers have come up with a variety of methods to refine the grains: such as increasing the nucleation density, introducing nitrogen or oxygen, argon, etc., but these methods can only reduce the phenomenon of diamond particle growth and cannot fundamentally change Competitive Growth Mechanism of Diamond Films

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  • Method for growing polycrystalline diamond piece by using microwave plasma chemical vapor deposition method
  • Method for growing polycrystalline diamond piece by using microwave plasma chemical vapor deposition method
  • Method for growing polycrystalline diamond piece by using microwave plasma chemical vapor deposition method

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Embodiment 1

[0030] In the embodiment of the present invention, the method for growing polycrystalline diamond chips by microwave plasma chemical vapor deposition has the following specific steps:

[0031] (1) Pretreating the substrate in the microwave plasma chemical vapor deposition equipment;

[0032] (2) Nucleation for 0.5h on the pretreated substrate according to the conventional polycrystalline diamond sheet growth process;

[0033] (3) Long-term growth of polycrystalline diamond chips under the condition of fixed methane, hydrogen and other added gases, the growth temperature is controlled at 800-1050°C, and the growth time is controlled at 40 hours;

[0034] (4) After 40 hours of growth, stop the supply of other gases except hydrogen, use the plasma generated by hydrogen to etch the diamond chip sample in the reaction chamber for 1 hour, and then slowly reduce the microwave power in the microwave plasma chemical vapor deposition equipment , And gradually stop the supply of hydrogen to redu...

Embodiment 2

[0044] In the embodiment of the present invention, the method for growing polycrystalline diamond chips by microwave plasma chemical vapor deposition has the following specific steps:

[0045] (1) Pretreating the substrate in the microwave plasma chemical vapor deposition equipment;

[0046] (2) Nucleation for 0.5h on the pretreated substrate according to the conventional polycrystalline diamond sheet growth process;

[0047] (3) Long-term growth of polycrystalline diamond chips under the conditions of fixed methane, hydrogen and other added gases, the growth temperature is controlled at 800-1050°C, and the growth time is controlled at 24 hours;

[0048] (4) After 24 hours of growth, stop the supply of other gases except hydrogen, use the plasma generated by hydrogen to etch the diamond chip sample in the reaction chamber for 1 hour, and then slowly reduce the microwave power in the microwave plasma chemical vapor deposition equipment , And gradually stop the hydrogen supply to reduce...

Embodiment 3

[0059] In the embodiment of the present invention, the method for growing polycrystalline diamond chips by microwave plasma chemical vapor deposition has the following specific steps:

[0060] (1) Pretreating the substrate in the microwave plasma chemical vapor deposition equipment;

[0061] (2) Nucleation for 0.5h on the pretreated substrate according to the conventional polycrystalline diamond sheet growth process;

[0062] (3) Long-term growth of polycrystalline diamond chips under the conditions of fixed methane, hydrogen and other added gases, the growth temperature is controlled at 800-1050°C, and the growth time is controlled at 24 hours;

[0063] (4) After 24 hours of growth, stop the supply of other gases except hydrogen, use the plasma generated by hydrogen to etch the diamond chip sample in the reaction chamber for 1 hour, and then slowly reduce the microwave power in the microwave plasma chemical vapor deposition equipment , And gradually stop the hydrogen supply to reduce...

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Abstract

The invention discloses a method for growing a polycrystalline diamond piece by using a microwave plasma chemical vapor deposition method and relates to the field of artificial diamond. The method specifically comprises the following steps: (1) pretreating a substrate in microwave plasma chemical vapor deposition equipment; (2) forming a core for 0.4-0.6 hour on the pretreated substrate accordingto common polycrystalline diamond piece growth process, controlling growth time according to a final growth thickness, and carrying out power-off, grinding and polishing for multiple times for repeated multi-time growth. The self-support thickness of the polycrystalline diamond piece grown by using the method can be a millimeter grade or greater, the phenomenon that diamond granules are continuously increased along with increase of thicknesses can be effectively inhibited, then the purposes that the diamond granules are refined while thickness requirements are met, and the density, the mechanical strength and the surface smoothness after polishing of the diamond piece are improved, are achieved, and effects of a CVD (Chemical Vapor Deposition) polycrystalline diamond material can be sufficiently taken into play.

Description

Technical field [0001] The invention relates to the field of artificial diamonds, in particular to a method for growing polycrystalline diamond chips by a microwave plasma chemical vapor deposition method. Background technique [0002] At present, polycrystalline diamond materials almost reach or exceed high-quality natural diamonds in terms of hardness, thermal conductivity, optical transmittance, and chemical stability, but the fracture strength is not ideal, about an order of magnitude lower than natural diamonds. , Which causes polycrystalline diamond to be prone to cracking during use, thus ending its service life. The main reason for this problem is that apart from the stress during the deposition and cooling of the diamond slab, the other main reason is that the diamond grain size is too large during the deposition process; on the other hand, the diamond grain size increases, At the same time, it also reduces the surface density and smoothness of the polished diamond shee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/26
Inventor 宋彦军陶隆凤王礼胜
Owner 河北地质大学
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