High power microwave plasma chemical vapor deposition device for diamond film

Abstract

The invention relates to a high power microwave plasma chemical vapor deposition device for a diamond film, and belongs to the technical field of preparation of diamond films. The device comprises an upper cylinder and a lower cylinder of a resonant cavity, a deposition table for depositing the diamond film and a resonant cavity main body formed by semi-ellipsoidal microwave reflectors. The semi-ellipsoidal microwave reflectors are in smooth transition with the upper cylinder of the resonant cavity in shape, thus, guaranteeing that microwave entering into the resonant cavity is not scattered. At the same time, the semi-ellipsoidal microwave reflectors are arranged, so that the resonant cavity has strong focusing capacity of a microwave electric field for the convenience of focusing microwave energy above the deposition table so as to form a strong electric field area and high-density plasmas. The positions of the semi-ellipsoidal microwave reflectors are adjusted to adjust the resonant cavity of the device, so that distribution of the microwave electric field and plasmas in the device are optimized in real time. At the same time, a quartz glass window in the device is located below the diamond film deposition table, and other main parts of the device are far from the plasmas and can be directly cooled by water better.

Description

technical field [0001] The invention belongs to the technical field of diamond film preparation, and in particular provides a high-power microwave plasma chemical vapor deposition device which can be applied to diamond film preparation. Background technique [0002] Diamond film has a series of excellent properties such as high hardness, low coefficient of friction, high thermal conductivity, high light transmittance, wide band gap, high resistivity, high breakdown field strength and high carrier mobility. It is a kind of performance Extremely superior multifunctional material. It is precisely because of its excellent performance in so many aspects that diamond film is one of the most eye-catching hot materials in the field of new materials in the 21st century. [0003] There are many methods for artificially preparing diamond films, such as hot wire method, hot cathode method, DC arc plasma jet method, etc. Among many methods, the microwave plasma chemical vapor depositio...

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Problems solved by technology

[0009] The purpose of the present invention is to provide a high-power microwave plasma diamond film chemical vapor deposition device, which can overcome the distance between microwave windows or microwave antennas, deposition chamber walls and other components in existing various MPCVD diamond film deposition devices. The shortcoming that the microwave power of the MPCVD device can be increased due to the shortcoming that the body is close, the device is not easy to adjust and the direct water cooling is not easy, so it can be applied to the deposition of diamond film under high power conditions, and can obtain a higher deposition rate

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