Preparation method of porous diamond film

A diamond thin film and thin film technology, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of high growth cost, high growth equipment requirements, and inconspicuous porous structure, so as to improve hydrophilicity Effect

Active Publication Date: 2015-04-08
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

In this new process called Microwaves Plasmas (MWP), there're two ways we use it - one involves placing an SiC wafer inside a chamber where certain gases like oxygen or nitrogen mix together under high pressure conditions at very low temperatures. Another way involve introducing special chemical molecules such as dimethyltin chloride onto the SiC wafers before they have been treated by various methods like thermal treatment processes. These techniques help create tiny holes within the crystal lattices of the material, which makes them more accessible than other materials due to their larger size compared to traditional manufacturing methods. By controllably increasing the amount of impurities during these treatments, pore structures may become even better.

Problems solved by technology

This patents describes different ways to improve the performance of electronic devices such as transistors due to increased demand from various industries like manufacturing processes related to electronics. One approach involves improving the quality and durability of these products through improved techniques involving reducing impurities content during fabrications while maintaining good electrical conductivity and reduced costs associated therewith. Another solution includes developing new types of ceramic materials called amorphous calcium nitride (ACN)). Among them, ACNPs show promise towards better environmentally friendly solutions compared to other options.

Method used

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Embodiment 1

[0022] Using the microwave plasma chemical vapor deposition method, first place a silicon substrate in the middle of a quartz tube vacuum furnace. The surface of the silicon substrate is coated with a 5nm Pt film as a catalyst, and the vacuum of the vacuum tube furnace is evacuated to 10 mbar with a mechanical pump. , into H 2 and heated to 800°C, then turn on the Ar to load methyl formate to the microwave plasma generation area, the flow rate of H2 is 95 sccm, the flow rate of Ar is 5 sccm, turn on the microwave power supply and start deposition, the growth time is 5 hours, on the surface of the silicon substrate The bulk diamond film is obtained, air-cooled and then heated with air (50-70 sccm) at a heating rate of 20-30°C / min, and the bulk diamond film is calcined in an air atmosphere at 500°C for 60 minutes to obtain a porous diamond film.

Embodiment 2

[0024] Using the microwave plasma chemical vapor deposition method, first place a silicon substrate in the middle of a quartz tube vacuum furnace. The surface of the silicon substrate is coated with a 3nm Pt film as a catalyst, and the vacuum of the vacuum tube furnace is evacuated to 30 mbar by a mechanical pump. , into H 2 And heated to 850 ℃, then turn on Ar to load methyl formate to the microwave plasma generation area, the flow rate of H2 is 99sccm, the flow rate of Ar is 1sccm, turn on the microwave power supply to start deposition, the growth time is 8 hours, on the surface of the silicon substrate The bulk diamond film is obtained, air-cooled and then heated with air (50-70 sccm) at a heating rate of 20-30°C / min, and the bulk diamond film is calcined in an air atmosphere at 600°C for 30 minutes to obtain a porous diamond film.

Embodiment 3

[0026] Using the microwave plasma chemical vapor deposition method, first place a silicon substrate in the middle of a quartz tube vacuum furnace. The surface of the silicon substrate is coated with a 3nm Pt film as a catalyst, and the vacuum of the vacuum tube furnace is evacuated to 30 mbar by a mechanical pump. , into H 2 and heated to 850°C, then open Ar to load methyl formate and B 2 h 6 To the microwave plasma generation area, the flow velocity of H2 is 99sccm, and the flow velocity of Ar is 1sccm. Turn on the microwave power supply and start to deposit. The growth time is 8 hours. A bulk diamond film is obtained on the surface of the silicon substrate, and air (50- 70 sccm) for heating at a heating rate of 20-30° C. / min, and calcining the bulk diamond film in an air atmosphere at 600° C. for 30 minutes to obtain a porous diamond film.

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Abstract

The invention discloses a preparation method of a porous diamond film. The preparation method of the porous diamond film comprises the following steps: putting a silicon substrate into a microwave-plasma chemical vapour deposition device, wherein a Pt metal film is plated on the surface of the silicon substrate as a catalyst; controlling the vacuum degree to be 10-30 millibars, introducing a working gas, loading a carbon source to a microwave-plasma generating region, and heating to 750-850 DEG C; depositing to obtain a blocky diamond film; calcining the film in the air atmosphere at the temperature of 500-600 DEG C, thus obtaining the porous diamond film. The preparation method of the porous diamond film has the advantages that no template is needed, no complex pre-treatment process or high temperature process is needed, metal pollution can be avoided, and a treatment process is further simplified.

Description

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Claims

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Application Information

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Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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