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Tunable rounding cavity type high-power microwave plasma chemical vapor deposition device

A technology of chemical vapor deposition and high-power microwave, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of low input power of microwave without water cooling, lack of adjustment measures, poor focusing ability, etc., to achieve Improve deposition efficiency and uniformity, avoid detuning phenomenon, and reduce the effect of reflected power

Active Publication Date: 2018-10-09
CHENGDU NEWMAN HERUI MICROWAVE TECH CO LTD
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

This device can solve the problems existing in various existing devices such as low microwave input power without water cooling, system components too close to the plasma, complex design and difficult processing, uneven air flow, lack of perfect adjustment measures, poor focusing ability, dispersion, etc. problem, to achieve efficient deposition of high-power, large-area, high-quality diamond films

Method used

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  • Tunable rounding cavity type high-power microwave plasma chemical vapor deposition device
  • Tunable rounding cavity type high-power microwave plasma chemical vapor deposition device
  • Tunable rounding cavity type high-power microwave plasma chemical vapor deposition device

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Embodiment Construction

[0034] The present invention will be described more fully below using examples. This invention may be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein.

[0035] For ease of description, spatially relative terms such as "upper," "lower," "left," and "right" may be used herein to describe the relationship of one element or feature relative to another element or feature shown in the figures. It will be understood that the spatial terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "lower" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientatio...

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Abstract

The invention discloses a tunable rounding cavity type high-power microwave plasma chemical vapor deposition device which is composed of a microwave resonance cavity main body, a mode converter and amicrowave electric field adjusting system. According to the chemical vapor deposition device, by means of the rounding cavity type cavity, a sample table, the mode converter and an adjusting structurethereof, the problems of low microwave input power, the poor focusing ability, shortage of perfect adjusting measures and the too close distance between a unifying part and plasma existing in variousexisting devices can be effectively solved, gas is input from the top and output from the bottom, the multi-hole array distributing structure of a flow uniformizing ring and a buffering bin is adopted, uniformity of gas flow and distribution in a resonance cavity and on the surface of a base piece can be effectively is improved, and deposition efficiency and uniformity of a deposition diamond film are further improved. The device can achieve efficient deposition of large-area and high-quality diamond film under high power.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to an adjustable circular cavity-type high-power microwave plasma chemical vapor deposition device. Background technique [0002] Diamond has excellent properties such as high hardness, high thermal conductivity, low expansion coefficient, high light transmittance, high resistivity, and high current-carrying mobility, which makes it widely used in military, aerospace, bioengineering, computer chips, and electronic information engineering. The field has a broad application prospect. [0003] Compared with direct current, high frequency, and hot wire emission methods, microwave plasma chemical vapor deposition (MPCVD) is considered to be the first choice and the most advanced method for preparing high-quality diamond films in the world today. Uniformity, good control performance and so on. How to prepare high-quality, large-area, and uniform-performance diamond fil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/511C23C16/27C23C16/455
CPCC23C16/274C23C16/455C23C16/511Y02P70/50
Inventor 季天仁刘文科季宇
Owner CHENGDU NEWMAN HERUI MICROWAVE TECH CO LTD
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