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Method for manufacturing porous diamond or porous cubic silicon carbide self-supporting film

A cubic silicon carbide, self-supporting film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of increasing production cost, increasing the steps of removing metal electrodes, etc., to achieve low production cost, The effect of good stability and good controllability

Active Publication Date: 2014-12-03
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This not only introduces metal impurities into the porous silicon carbide film, but also increases the steps to remove the metal electrodes after the production is completed, thus increasing the production cost

Method used

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  • Method for manufacturing porous diamond or porous cubic silicon carbide self-supporting film
  • Method for manufacturing porous diamond or porous cubic silicon carbide self-supporting film
  • Method for manufacturing porous diamond or porous cubic silicon carbide self-supporting film

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preparation example Construction

[0039] In the preparation method of porous diamond and porous cubic silicon carbide established according to the present invention, in step 2, the base material pretreated in step 1 is put into chemical vapor deposition equipment, and the vapor phase deposition equipment includes: microwave plasma chemical vapor phase deposition and hot wire chemical vapor deposition. Reactive gases are hydrocarbons, organosilanes and hydrogen.

[0040] In a preferred embodiment of the method according to the invention, the chemical vapor deposition is carried out at a temperature of 500-1000°C, preferably 700-900°C, still more preferably 750-850°C. When the temperature is higher than 1000°C or lower than 500°C, the growth of diamond is inhibited, so that the diamond / cubic silicon carbide composite film cannot be obtained.

[0041] In the preparation method of porous diamond and porous cubic silicon carbide established according to the present invention, in step 2, the reactive gas used for c...

Embodiment

[0049] A high diamond nucleation rate was obtained by immersing a 2-inch silicon wafer in a diamond-containing solution for 30 minutes. Clean the silicon wafer and put it into the microwave plasma vapor deposition equipment. Vacuumize so that the air pressure in the chamber is less than 1×10 -2 Torr, feed hydrogen to 25 Torr, while heating the substrate to 700°C. Then the microwave plasma was excited and the microwave power was fixed to 700W, and methane and tetramethylsilane were passed through to deposit the composite film. figure 2 (a) and (b) show two composite films with different diamond / cubic SiC ratios. figure 2 (a) The composite film shown has a high diamond content, and the concentration ratio of organosilane and methane used to deposit this sample is 20‰; figure 2 (b) shows a composite film with a high cubic SiC content. The concentration ratio of organosilane and methane used to deposit this sample is 60‰.

[0050] The obtained composite film was corroded in...

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Abstract

The invention discloses a method for manufacturing a porous diamond or porous cubic silicon carbide self-supporting film. The method comprises the steps that a base material is provided, and surface of the base material is pretreated to obtain a higher diamond-shaped nuclei rate; the pretreated base material is put into a microwave plasma chemical vapor deposition or hot filament chemical vapor deposition reactor, and at the temperature of 600 DEG C to 900 DEG C, a diamond / cubic silicon carbide composite film is manufactured; selective etching is performed on the obtained composite film, at the temperature above 70 DEG C, the composite film is etched in mixed corrosion liquid of hydrofluoric acid and nitric acid, and the porous diamond self-supporting film is obtained, at the temperature above 500 DEG C, the composite film is heated in the air containing oxygen gas, and the porous cubic silicon carbide self-supporting film is obtained. Under the condition that any template and any electrode material are not used, the obtained porous diamond self-supporting film and the porous cubic silicon carbide self-supporting film have the controllable aperture, the controllable porosity and the controllable thickness, and the method is suitable for industrial application and fundamental research.

Description

technical field [0001] The invention relates to a method for preparing a porous diamond or porous cubic silicon carbide self-supporting film. Background technique [0002] Due to their large surface area and good permeability, porous materials have high application value in basic research and industrial production. Through the interaction with atoms, ions and molecules, porous materials have high application prospects in ion exchange, filtration, coating of implant materials, adsorption of biochemical substances, catalyst carriers, drug release devices, medical diagnosis and other fields. However, different applications often require different properties of porous materials, such as different chemical stability, mechanical stability, surface hydrophilicity / hydrophobicity, pore size, porosity, etc. Among the current material systems, diamond and cubic silicon carbide have excellent chemical, mechanical and electrical properties. Over the past few decades, there has been con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/56
Inventor 姜辛庄昊拖森史泰勒
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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