Domical microwave plasma chemical vapor deposition diamond film device

A chemical vapor deposition, microwave plasma technology, applied in gaseous chemical plating, electrical components, metal material coating processes, etc., to achieve the effect of helping uniform deposition

Active Publication Date: 2014-03-26
HEBEI PLASMA DIAMOND TECH
View PDF6 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The dome-type MPCVD device has a reasonable quartz microwave window design, a double tuning mechanism, a good water cooling system, and there is no phenomenon of impurity carbon depositor walls, which fundamentally solves the problem of various existing MPCVD diamond film deposition devices. Problems in the process of preparing high-quality diamond films under high power

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Domical microwave plasma chemical vapor deposition diamond film device
  • Domical microwave plasma chemical vapor deposition diamond film device
  • Domical microwave plasma chemical vapor deposition diamond film device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Utilize the dome type MPCVD diamond film deposition device that the present invention proposes, carried out the deposition of high-quality diamond film, experimental process is as follows:

[0036] (1) Turn on the chiller, from the top coaxial waveguide converter 1 to the middle cylindrical loop antenna 2 to the bottom adjustable center deposition table 8 and adjustable edge deposition table 9, and the entire cylindrical shell 3, All parts through which the microwave propagates are water-cooled;

[0037] (2) Turn on the mechanical pump to evacuate the resonance cavity to below 1Pa;

[0038] (3) The hydrogen gas and the methane gas with a flow rate of 400ml / min and 20ml / min are respectively introduced into the resonance cavity through the intake pipe 13;

[0039] (4) Adjust the valve size of the mechanical pump so that the gas pressure in the resonance chamber is around 800Pa;

[0040] (5) Turn on the microwave power supply, input the microwave 12 with a frequency of 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
Login to view more

Abstract

The invention relates to a domical microwave plasma chemical vapor deposition diamond film device which is suitable for quick preparation of a high-quality diamond film in the presence of high-power microwave input. A resonant cavity main body is composed of a domical reflecting body, a metal sheet reflecting body, a quartz ring window, a cylindrical reflecting body and a deposition platform, wherein the metal sheet reflecting body can block spreading of microwave to the top of the resonant cavity, so that more microwave can be accumulated above a substrate; the deposition platform is divided into a central deposition platform and a marginal deposition platform, and the independent vertical moving functions of the central deposition platform and the marginal deposition platform are beneficial to realize quick optimization of a plasma state; and the quartz ring window is hidden in a slit formed by the wall of the resonant cavity, thus avoiding etching of plasma and being beneficial to improve the vacuum performance of the resonant cavity. Besides, the favorable design of a water cooling system ensures the high-power operating safety of the equipment. So many advantages are combined, so that the domical microwave plasma chemical vapor deposition device has a capability of depositing a high-quality diamond film at high speed under a high power level.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition, and provides a dome-type microwave plasma chemical vapor deposition device, which is suitable for depositing high-quality diamond films under high power. Background technique [0002] The chemical vapor deposition method of depositing solid materials on the surface of the substrate through the chemical reaction of the reactive gas is a good method for preparing uniform thin film materials. Among them, the hot wire method, DC arc spray method, and microwave plasma method have been successfully applied to diamond films. preparation. [0003] The diamond film material integrates a variety of excellent properties, such as high hardness, high thermal conductivity, high light transmittance, high resistivity, etc., and can be used to make wear-resistant coatings, acoustic diaphragms, optical windows, and high thermal conductivity of integrated circuits. Substrate etc. According to di...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/511C23C16/27
CPCH01J37/32192C23C16/274C23C16/511H01J37/32247H01J37/32256
Inventor 唐伟忠苏静杰李义锋刘艳青丁明辉李小龙姚鹏丽
Owner HEBEI PLASMA DIAMOND TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products